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FETs, MOSFETs - Arrays (5637)

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Records 5637
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Part Number:

TPCP8407-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

MOSFET N/P-CH 40V 5A/4A PS-8

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    5A (Ta), 4A (Ta)

  • Rds On (Max) @ Id, Vgs:

    36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.8nC @ 10V, 18nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    505pF @ 10V, 810pF @ 10V

  • Power - Max:

    690mW (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SMD, Flat Lead

  • Supplier Device Package:

    PS-8

Stock:

9984

1

Part Number:

SP8K3TB1

Manufacturer:

Rohm Semiconductor

Description:

MOSFET 2N-CH 30V 7A 8SOP

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    Logic Level Gate, 4V Drive

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    7A (Ta)

  • Rds On (Max) @ Id, Vgs:

    24mOhm @ 7A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.8nC @ 5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    600pF @ 10V

  • Power - Max:

    2W (Ta)

  • Operating Temperature:

    150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

  • Supplier Device Package:

    8-SOP

Stock:

0

1

Part Number:

DMTH6015LDVW-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 60V 9.2A PWRDI3333

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    9.2A (Ta), 24.5A (Tc)

  • Rds On (Max) @ Id, Vgs:

    20.5mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    14.3nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    825pF @ 30V

  • Power - Max:

    1.46W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PowerDI3333-8 (Type UXD)

Stock:

0

1

Part Number:

STL64DN4F7AG

Manufacturer:

STMicroelectronics

Description:

MOSFET 2N-CH 40V 40A POWERFLAT

  • Series:

    STripFET™ F7

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    40A (Tc)

  • Rds On (Max) @ Id, Vgs:

    8.5mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    9.8nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    637pF @ 25V

  • Power - Max:

    57W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerVDFN

  • Supplier Device Package:

    PowerFlat™ (5x6)

Stock:

0

1

Part Number:

TSM110NB04DCR-RLG

Manufacturer:

Taiwan Semiconductor Corporation

Description:

MOSFET 2N-CH 40V 10A/48A 8DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    40V

  • Current - Continuous Drain (Id) @ 25°C:

    10A (Ta), 48A (Tc)

  • Rds On (Max) @ Id, Vgs:

    11mOhm @ 10A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    25nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1506pF @ 20V

  • Power - Max:

    2W (Ta), 48W (Tc)

  • Operating Temperature:

    -55°C ~ 155°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    8-PDFN (5x6)

Stock:

44646

1

Part Number:

DMN31D5UDJ-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 30V 0.22A SOT963

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    220mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    1.5Ohm @ 100mA, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.38nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    22.6pF @ 15V

  • Power - Max:

    350mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-963

  • Supplier Device Package:

    SOT-963

Stock:

20487

1

Part Number:

DMN62D2UDMQ-7

Manufacturer:

Diodes Incorporated

Description:

2N7002 FAMILY SOT26 T&R 3K

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    440mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    2Ohm @ 50mA, 5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.8nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    41pF @ 30V

  • Power - Max:

    500mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-23-6

  • Supplier Device Package:

    SOT-26

Stock:

0

1

Part Number:

DMN31D5UDW-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 25V~30V SOT363 T&R

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    430mA (Ta)

  • Rds On (Max) @ Id, Vgs:

    1.5Ohm @ 100mA, 4.5V

  • Vgs(th) (Max) @ Id:

    0.9V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    0.3nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    15.4pF @ 15V

  • Power - Max:

    330mW (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    SOT-363

Stock:

0

1

Part Number:

TSM6502CR

Manufacturer:

Taiwan Semiconductor Corporation

Description:

MOSFET N/P-CH 60V 24A/18A 8DFN

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    24A (Tc), 18A (Tc)

  • Rds On (Max) @ Id, Vgs:

    34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    10.3nC @ 4.5V, 9.5nC @ 4.5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1159pF @ 30V, 930pF @ 30V

  • Power - Max:

    40W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-PowerTDFN

  • Supplier Device Package:

    8-PDFN (5x6)

Stock:

0

1

Part Number:

DMNH6065SSDQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET 2N-CH 60V 3.8A 8SO

  • Series:

    -

  • FET Type:

    MOSFET (Metal Oxide)

  • FET Feature:

    -

  • Drain to Source Voltage (Vdss):

    60V

  • Current - Continuous Drain (Id) @ 25°C:

    3.8A (Ta)

  • Rds On (Max) @ Id, Vgs:

    65mOhm @ 3A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    11.3nC @ 10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    446pF @ 30V

  • Power - Max:

    1.5W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

  • Supplier Device Package:

    8-SO

Stock:

0

1

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