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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

RN1118-TE85L-F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.1A SSM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    100 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

2136

1

Part Number:

DTC144EBT2L

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS NPN 50V 0.1A VMN3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased + Diode

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-923F

  • Supplier Device Package:

    VMN3

Stock:

0

1

Part Number:

DTC113ZCA-HF

Manufacturer:

Comchip Technology

Description:

TRANS PREBIAS NPN 50V SOT23-3

  • Series:

    DTC113ZCA-HF

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    33 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

0

1

Part Number:

DTC123EE3TL

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS PNP 50V 0.1A EMT3

  • Series:

    DTA123E

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    EMT3

Stock:

8940

1

Part Number:

ADA123JUQ-7

Manufacturer:

Diodes Incorporated

Description:

TRANS PREBIAS SOT363

  • Series:

    -

  • Transistor Type:

    -

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    -

  • Frequency - Transition:

    -

  • Power - Max:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

ADTA143ECAQ-13

Manufacturer:

Diodes Incorporated

Description:

TRANS PREBIAS NPN 50V SOT23-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    310 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

0

1

Part Number:

ADTA143ECAQ-7

Manufacturer:

Diodes Incorporated

Description:

TRANS PREBIAS NPN 50V SOT23-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    310 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

0

1

Part Number:

RN2408-LXHF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V SMINI

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

18000

1

Part Number:

DDTC115EUAQ-7-F

Manufacturer:

Diodes Incorporated

Description:

TRANS PREBIAS NPN 50V SOT323

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    82 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    SOT-323

Stock:

0

1

Part Number:

RN2103MFV-L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V 0.1A VESM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

0

1

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