Part Number:
RN1107-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V 0.1A SSM
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
SSM
Stock:
18000
Part Number:
PBRN123ET-QR
Manufacturer:
Nexperia
Description:
TRANS PREBIAS NPN 40V TO236AB
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
350 @ 600mA, 5V
Vce Saturation (Max) @ Ib, Ic:
1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
250 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
TO-236AB
Stock:
0
Part Number:
RN2111-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A SSM
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
SSM
Stock:
17910
Part Number:
PDTA143XQC-QZ
Manufacturer:
Nexperia
Description:
TRANS PREBIAS PNP 50V 0.1A 3DFN
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
180 MHz
Power - Max:
360 mW
Mounting Type:
Surface Mount, Wettable Flank
Package / Case:
3-XDFN Exposed Pad
Supplier Device Package:
DFN1412D-3
Stock:
15000
Part Number:
RN2103-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A SSM
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
SSM
Stock:
18000
Part Number:
RN1402-LXHF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V SMINI
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
S-Mini
Stock:
8025
Part Number:
PDTC124ET-QR
Manufacturer:
Nexperia
Description:
TRANS PREBIAS NPN 50V TO236AB
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
230 MHz
Power - Max:
250 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
TO-236AB
Stock:
0
Part Number:
RN2308-LXHF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A SC70
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-70, SOT-323
Supplier Device Package:
SC-70
Stock:
17820
Part Number:
DTC143TKAT246
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS NPN 50V 0.1A SMT3
Series:
DTC143T
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SMT3
Stock:
0
Part Number:
RN2413-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
PB-F S-MINI PLN (LF) TRANSISTOR
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
200 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
S-Mini
Stock:
0
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