Part Number:
IXYN120N65B3D1
Manufacturer:
IXYS
Description:
IGBT PT 650V 250A SOT227B
Series:
GenX3™, XPT™
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
250 A
Current - Collector Pulsed (Icm):
770 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 100A
Power - Max:
830 W
Switching Energy:
1.34mJ (on), 1.5mJ (off)
Input Type:
Standard
Gate Charge:
250 nC
Td (on/off) @ 25°C:
30ns/168ns
Test Condition:
400V, 50A, 2Ohm, 15V
Reverse Recovery Time (trr):
28 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
SOT-227-4, miniBLOC
Supplier Device Package:
SOT-227B
Stock:
0
Part Number:
IGQ100N120S7XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT TRENCH 1200V 188A TO247-3
Series:
TRENCHSTOP™
IGBT Type:
Trench
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
188 A
Current - Collector Pulsed (Icm):
300 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 100A
Power - Max:
824 W
Switching Energy:
6.87mJ (on), 4.71mJ (off)
Input Type:
Standard
Gate Charge:
610 nC
Td (on/off) @ 25°C:
38ns/200ns
Test Condition:
600V, 100A, 1.6Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
PG-TO247-3-55
Stock:
675
Part Number:
STGSB200M65DF2AG
Manufacturer:
STMicroelectronics
Description:
DISCRETE
Series:
-
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
216 A
Current - Collector Pulsed (Icm):
700 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 200A
Power - Max:
714 W
Switching Energy:
3.82mJ (on), 6.97mJ (off)
Input Type:
Standard
Gate Charge:
554 nC
Td (on/off) @ 25°C:
122ns/250ns
Test Condition:
400V, 200A, 4.7Ohm, 15V
Reverse Recovery Time (trr):
174.5 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
9-PowerSMD
Supplier Device Package:
9-ACEPACK SMIT
Stock:
450
Part Number:
APT35GP120B2D2G
Manufacturer:
Microchip Technology
Description:
IGBT PT 1200V 96A TMAX
Series:
POWER MOS 7®
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
96 A
Current - Collector Pulsed (Icm):
140 A
Vce(on) (Max) @ Vge, Ic:
3.9V @ 15V, 35A
Power - Max:
540 W
Switching Energy:
1mJ (on), 1.185mJ (off)
Input Type:
Standard
Gate Charge:
150 nC
Td (on/off) @ 25°C:
14ns/99ns
Test Condition:
800V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr):
85 ns
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3 Variant
Supplier Device Package:
T-MAX™ [B2]
Stock:
120
Part Number:
SIGC25T60UNX7SA1
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 30A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
16ns/122ns
Test Condition:
400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC25T60UNX7SA2
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
30 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
3.15V @ 15V, 30A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
16ns/122ns
Test Condition:
400V, 30A, 1.8Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
RGW60NL65HRBTL
Manufacturer:
Rohm Semiconductor
Description:
IGBT TRENCH FS 650V 67A TO263L
Series:
-
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
67 A
Current - Collector Pulsed (Icm):
120 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 30A
Power - Max:
187 W
Switching Energy:
180µJ (on), 250µJ (off)
Input Type:
Standard
Gate Charge:
84 nC
Td (on/off) @ 25°C:
34ns/122ns
Test Condition:
400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263L
Stock:
3000
Part Number:
IKFW50N65ES5XKSA1
Manufacturer:
Infineon Technologies
Description:
IGBT TRENCH FS 650V 74A HSIP247
Series:
Trenchstop™ 5
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
74 A
Current - Collector Pulsed (Icm):
160 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 40A
Power - Max:
127 W
Switching Energy:
860µJ (on), 400µJ (off)
Input Type:
Standard
Gate Charge:
95 nC
Td (on/off) @ 25°C:
19ns/130ns
Test Condition:
400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr):
69 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
PG-HSIP247-3-2
Stock:
642
Part Number:
SIGC61T60NCX1SA1
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
75 A
Current - Collector Pulsed (Icm):
225 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 75A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
65ns/170ns
Test Condition:
300V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC61T60NCX1SA3
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
75 A
Current - Collector Pulsed (Icm):
225 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 75A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
65ns/170ns
Test Condition:
300V, 75A, 3Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
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