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Send MessageAPT35GP120B2D2G
1200 V|96 A|540 W
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IGBT PT 1200V 96A TMAX
Specifications
- Brand
- Microchip Technology
- Package
- TO-247-3 Variant
- Packaging
- —
- Weight
- —
Total Inventory
120pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APT35GP120B2D2G from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | POWER MOS 7® | |
| IGBT Type | PT | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Current - Collector (Ic) (Max) | 96 A | |
| Current - Collector Pulsed (Icm) | 140 A | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 35A | |
| Power - Max | 540 W | |
| Switching Energy | 1mJ (on), 1.185mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 150 nC | |
| Td (on/off) @ 25°C | 14ns/99ns | |
| Test Condition | 800V, 35A, 5Ohm, 15V | |
| Reverse Recovery Time (trr) | 85 ns | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 Variant | |
| Supplier Device Package | T-MAX™ [B2] |
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