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Part Number:

GT20J341-S4X-S

Manufacturer:

Toshiba Semiconductor and Storage

Description:

DISCRETE IGBT TRANSISTOR TO-220S

Series:
-
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
80 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 20A
Power - Max:
45 W
Switching Energy:
500µJ (on), 400µJ (off)
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
60ns/240ns
Test Condition:
300V, 20A, 33Ohm, 15V
Reverse Recovery Time (trr):
90 ns
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-220-3 Full Pack
Supplier Device Package:
TO-220SIS

Stock:

84

1

Part Number:

SIGC18T60NCX7SA2

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 20A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
21ns/110ns
Test Condition:
300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die

Stock:

0

1

Part Number:

SIGC18T60NCX7SA1

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 20A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
21ns/110ns
Test Condition:
300V, 20A, 13Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die

Stock:

0

1

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