FETs, MOSFETs - Single (41758)

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

76.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

5.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

15.2nC @ 4.5V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

2260pF @ 12V

FET Feature:

-

Power Dissipation (Max):

62.5W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

36mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

11.7nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

765pF @ 25V

FET Feature:

-

Power Dissipation (Max):

50W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

75V

Current - Continuous Drain (Id) @ 25°C:

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

28mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2.3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

19nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

2070pF @ 25V

FET Feature:

-

Power Dissipation (Max):

75W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

16.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

8.2nC @ 4.5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

680pF @ 12V

FET Feature:

-

Power Dissipation (Max):

41.6W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

LFPAK56, Power-SO8

Package / Case:

SC-100, SOT-669

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

64nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

7124pF @ 25V

FET Feature:

-

Power Dissipation (Max):

254W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

I2PAK

Package / Case:

TO-262-3 Long Leads, I²Pak, TO-262AA

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

6.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

108nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

5836pF @ 25V

FET Feature:

Temperature Sensing Diode

Power Dissipation (Max):

272W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220-5

Package / Case:

TO-220-5

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

137mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

339pF @ 25V

FET Feature:

-

Power Dissipation (Max):

53W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK

Package / Case:

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

28mOhm @ 20A, 5V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

1700pF @ 25V

FET Feature:

-

Power Dissipation (Max):

99W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

75V

Current - Continuous Drain (Id) @ 25°C:

67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

14mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

35nC @ 5V

Vgs (Max):

±15V

Input Capacitance (Ciss) (Max) @ Vds:

4034pF @ 25V

FET Feature:

-

Power Dissipation (Max):

157W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3

Series:

TrenchMOS™

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

55V

Current - Continuous Drain (Id) @ 25°C:

66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

3085pF @ 25V

FET Feature:

-

Power Dissipation (Max):

138W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Mounting Type:

Through Hole

Supplier Device Package:

TO-220AB

Package / Case:

TO-220-3