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FETs, MOSFETs - Single (41758)

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Part Number:

PHD34NQ10T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 100V 35A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    100V

  • Current - Continuous Drain (Id) @ 25°C:

    35A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    40mOhm @ 17A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    40nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1704pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    136W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

110

1

Part Number:

PHD16N03T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 30V 13.1A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30V

  • Current - Continuous Drain (Id) @ 25°C:

    13.1A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    100mOhm @ 13A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    5.2nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    180pF @ 30V

  • FET Feature:

    -

  • Power Dissipation (Max):

    32.6W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

227

1

Part Number:

PHD108NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A DPAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    16.3nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1375pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    187W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DPAK

  • Package / Case:

    TO-252-3, DPak (2 Leads + Tab), SC-63

Stock:

483

1

Part Number:

PHB96NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    4.95mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    26.7nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2200pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    115W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

132

1

Part Number:

PHB55N03LTA,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 55A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    55A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    14mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    20nC @ 5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    950pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    85W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

258

1

Part Number:

PHB160NQ08T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 75V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    75V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    5.6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    91nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    5585pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    300W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

447

1

Part Number:

PHB153NQ08LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 75V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    75V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    95nC @ 5V

  • Vgs (Max):

    ±15V

  • Input Capacitance (Ciss) (Max) @ Vds:

    8770pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    300W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

283

1

Part Number:

PHB112N06T,118

Manufacturer:

NXP

Description:

MOSFET N-CH 55V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    55V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    8mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    4V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    87nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    4352pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    200W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

405

1

Part Number:

PHB110NQ08LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 75V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    75V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    8.5mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    127.3nC @ 10V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    6631pF @ 25V

  • FET Feature:

    -

  • Power Dissipation (Max):

    230W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

342

1

Part Number:

PHB108NQ03LT,118

Manufacturer:

NXP

Description:

MOSFET N-CH 25V 75A D2PAK

  • Series:

    TrenchMOS™

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    25V

  • Current - Continuous Drain (Id) @ 25°C:

    75A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    5V, 10V

  • Rds On (Max) @ Id, Vgs:

    6mOhm @ 25A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    16.3nC @ 4.5V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1375pF @ 12V

  • FET Feature:

    -

  • Power Dissipation (Max):

    187W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    D2PAK

  • Package / Case:

    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Stock:

327

1

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