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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

PBRN123YS,126

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 0.7W TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    500 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    700mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

332

1

Part Number:

PBRN123YK,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 250MW SMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    500 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SMT3; MPAK

Stock:

438

1

Part Number:

PBRN123ES,126

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 0.7W TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    2.2 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    280 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    700mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

155

1

Part Number:

PBRN123EK,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 250MW SMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    2.2 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    280 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SMT3; MPAK

Stock:

239

1

Part Number:

PBRN113ZS,126

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 0.7W TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    1 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    500 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    700mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

420

1

Part Number:

PBRN113ZK,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 250MW SMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    1 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    500 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SMT3; MPAK

Stock:

412

1

Part Number:

PBRN113ES,126

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 0.7W TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    1 kOhms

  • Resistor - Emitter Base (R2):

    1 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    180 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    700mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

232

1

Part Number:

PBRN113EK,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 250MW SMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Resistor - Base (R1):

    1 kOhms

  • Resistor - Emitter Base (R2):

    1 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    180 @ 300mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    1.15V @ 8mA, 800mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SMT3; MPAK

Stock:

211

1

Part Number:

PDTD123YK,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 250MW SMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    10 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SMT3; MPAK

Stock:

342

1

Part Number:

PDTD123EK,115

Manufacturer:

NXP

Description:

TRANS PREBIAS NPN 250MW SMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2 kOhms

  • Resistor - Emitter Base (R2):

    2.2 kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    250mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SMT3; MPAK

Stock:

345

1

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