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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

BCR39PN-E6327

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS NPN/PNP

  • Series:

    -

  • Transistor Type:

    -

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    -

  • Frequency - Transition:

    -

  • Power - Max:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

PDTA143EQC-QZ

Manufacturer:

Nexperia

Description:

TRANS PREBIAS PNP 50V 0.1A 3DFN

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    180 MHz

  • Power - Max:

    360 mW

  • Mounting Type:

    Surface Mount, Wettable Flank

  • Package / Case:

    3-XDFN Exposed Pad

  • Supplier Device Package:

    DFN1412D-3

Stock:

14700

1

Part Number:

DTC114TE3HZGTL

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS NPN 50V 0.1A EMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 1mA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    EMT3

Stock:

9000

1

Part Number:

PDTC114YU-QF

Manufacturer:

Nexperia

Description:

TRANS PREBIAS NPN 50V SOT323

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    230 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    SOT-323

Stock:

0

1

Part Number:

PDTC114YU-QX

Manufacturer:

Nexperia

Description:

TRANS PREBIAS NPN 50V SOT323

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    230 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    SOT-323

Stock:

0

1

Part Number:

ADTC143ECAQ-7

Manufacturer:

Diodes Incorporated

Description:

TRANS PREBIAS NPN 50V SOT23-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    310 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

0

1

Part Number:

DTC124ESA-BP

Manufacturer:

Micro Commercial Co

Description:

TRANS PREBIAS NPN 50V TO92S

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    56 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    300 mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 Short Body

  • Supplier Device Package:

    TO-92S

Stock:

0

1

Part Number:

DTC124ESA-AP

Manufacturer:

Micro Commercial Co

Description:

TRANS PREBIAS NPN 50V TO92S

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    56 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    300 mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 Short Body (Formed Leads)

  • Supplier Device Package:

    TO-92S

Stock:

0

1

Part Number:

RN2414-TE85L-F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V SMINI

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

636

1

Part Number:

RN1113-LF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.1A SSM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    100 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

9000

1

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