Logo

Bipolar (BJT) - Single, Pre-Biased (4216)

Records 0
Reset All
Records 4216
Page 404/422

Part Number:

DTA124XMFHAT2L

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS PNP 50V 0.1A VMT3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VMT3

Stock:

0

1

Part Number:

DTC114WU3T106

Manufacturer:

Rohm Semiconductor

Description:

NPN, SOT-323, R1R2 LEAK

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    24 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    UMT3

Stock:

0

1

Part Number:

RN1306-LXHF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.1A SC70

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200 MHz

  • Power - Max:

    100 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    SC-70

Stock:

9000

1

Part Number:

TDTA144E-LM

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V SOT23-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    88 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    320 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

8970

1

Part Number:

RN1104-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.1A SSM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    100 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

13470

1

Part Number:

DTC114ESA-BP

Manufacturer:

Micro Commercial Co

Description:

TRANS PREBIAS NPN 50V TO92S

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    300 mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 Short Body

  • Supplier Device Package:

    TO-92S

Stock:

0

1

Part Number:

DTC114ESA-AP

Manufacturer:

Micro Commercial Co

Description:

TRANS PREBIAS NPN 50V TO92S

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    300 mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 Short Body (Formed Leads)

  • Supplier Device Package:

    TO-92S

Stock:

0

1

Part Number:

RN1406-LXHF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V SMINI

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

18000

1

Part Number:

RN2407-LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V SMINI

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

8985

1

Part Number:

RN1112-LXHF-CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.1A SSM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    100 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

18000

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯