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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

PDTC114EQB-QZ

Manufacturer:

Nexperia

Description:

TRANS PREBIAS NPN 50V 0.1A 3DFN

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    230 MHz

  • Power - Max:

    340 mW

  • Mounting Type:

    Surface Mount, Wettable Flank

  • Package / Case:

    3-XDFN Exposed Pad

  • Supplier Device Package:

    DFN1110D-3

Stock:

15000

1

Part Number:

DTC115GU3HZGT106

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS NPN 50V 0.1A UMT3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    82 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    UMT3

Stock:

9000

1

Part Number:

DTA114WU3T106

Manufacturer:

Rohm Semiconductor

Description:

PNP, SOT-323, R1R2 LEAK

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    24 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    UMT3

Stock:

0

1

Part Number:

RN1132MFV-L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.1A VESM

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

24000

1

Part Number:

DTA124EE3HZGTL

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS PNP 50V 0.1A EMT3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    56 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    EMT3

Stock:

9000

1

Part Number:

DTC114WCA-HF

Manufacturer:

Comchip Technology

Description:

TRANS PREBIAS NPN 50V SOT23-3

  • Series:

    DTC114WCA-HF

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    24 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

Stock:

0

1

Part Number:

RN2116MFV-L3F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V 0.1A VESM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    150 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-723

  • Supplier Device Package:

    VESM

Stock:

47961

1

Part Number:

DTD113ZSTP

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS NPN 50V 0.5A SPT

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased + Diode

  • Current - Collector (Ic) (Max):

    500 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    82 @ 50mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 2.5mA, 50mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200 MHz

  • Power - Max:

    300 mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    SC-72 Formed Leads

  • Supplier Device Package:

    SPT

Stock:

0

1

Part Number:

BCR185WE6327

Manufacturer:

Infineon Technologies

Description:

TRANS PREBIAS PNP 50V SOT323-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200 MHz

  • Power - Max:

    250 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-70, SOT-323

  • Supplier Device Package:

    PG-SOT323-3-1

Stock:

0

1

Part Number:

DTA124ECAHZGT116

Manufacturer:

Rohm Semiconductor

Description:

TRANS PREBIAS PNP 50V 0.1A SST3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    56 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250 MHz

  • Power - Max:

    200 mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SST3

Stock:

7305

1

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