Part Number:
DTA114GU3T106
Manufacturer:
Rohm Semiconductor
Description:
PNP, SOT-323, R1R2 LEAK
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
SC-70, SOT-323
Supplier Device Package:
UMT3
Stock:
0
Part Number:
RN1116-LXHF-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V 0.1A SSM
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
SSM
Stock:
18000
Part Number:
RN2112MFV-L3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A VESM
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
-
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
VESM
Stock:
0
Part Number:
RN1313-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V 0.1A USM
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-70, SOT-323
Supplier Device Package:
USM
Stock:
9000
Part Number:
DTC124XM-TP
Manufacturer:
Micro Commercial Co
Description:
BIPOLAR TRANSISTORS
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
SOT-723
Stock:
0
Part Number:
DTB123TCHZGT116
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS PNP 40V 0.5A SST3
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
200 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SST3
Stock:
8970
Part Number:
RN1116MFV-L3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V 0.1A VESM
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
VESM
Stock:
22023
Part Number:
PDTD123YT-APGVL
Manufacturer:
Nexperia
Description:
TRANS PREBIAS NPN 50V TO236AB
Series:
PDTD123Y
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
250 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
TO-236AB
Stock:
0
Part Number:
DTA115TCAT116
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS PNP 50V 0.1A SST3
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 100µA, 1mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SST3
Stock:
9000
Part Number:
DTC115EEBTL
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS NPN 50V 0.1A EMT3F
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
82 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SC-89, SOT-490
Supplier Device Package:
EMT3F (SOT-416FL)
Stock:
7986
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