Part Number:
DTC113ZE3TL
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS NPN 50V 0.1A EMT3
Series:
DTC143E
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
EMT3
Stock:
8985
Part Number:
RN2111MFV-L3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A VESM
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
-
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
VESM
Stock:
22650
Part Number:
RN1108MFV-L3F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V 0.1A VESM
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
VESM
Stock:
43983
Part Number:
PBRP123YT-QR
Manufacturer:
Nexperia
Description:
TRANS PREBIAS PNP 40V TO236AB
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
600 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
230 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic:
750mV @ 6mA, 600mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
250 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
TO-236AB
Stock:
0
Part Number:
DTC115EE3TL
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS PNP 50V 0.1A EMT3
Series:
DTA113E
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
EMT3
Stock:
9000
Part Number:
PDTA124XQC-QZ
Manufacturer:
Nexperia
Description:
TRANS PREBIAS PNP 50V 0.1A 3DFN
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
180 MHz
Power - Max:
360 mW
Mounting Type:
Surface Mount, Wettable Flank
Package / Case:
3-XDFN Exposed Pad
Supplier Device Package:
DFN1412D-3
Stock:
15000
Part Number:
RN2106MFV-L3F-CT
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A VESM
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
VESM
Stock:
90
Part Number:
DTD523YE3TL
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS NPN 12V 0.5A EMT3
Series:
-
Transistor Type:
NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
12 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
260 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
EMT3
Stock:
9000
Part Number:
DTA144ECAHE3-TP
Manufacturer:
Micro Commercial Co
Description:
BIPOLAR TRANSISTORS
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23
Stock:
0
Part Number:
DTA114YM-TP
Manufacturer:
Micro Commercial Co
Description:
TRANS PREBIAS PNP 50V SOT723
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
70 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SOT-723
Supplier Device Package:
SOT-723
Stock:
0
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