Part Number:
RN2415-TE85L-F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V SMINI
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
S-Mini
Stock:
2580
Part Number:
NHDTC144ETVL
Manufacturer:
Nexperia
Description:
TRANS PREBIAS NPN 80V TO236AB
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
80 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
170 MHz
Power - Max:
250 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
TO-236AB
Stock:
120000
Part Number:
RN2303-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V 0.1A SC70
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
200 MHz
Power - Max:
100 mW
Mounting Type:
Surface Mount
Package / Case:
SC-70, SOT-323
Supplier Device Package:
SC-70
Stock:
600
Part Number:
PDTC143XQBZ
Manufacturer:
Nexperia
Description:
TRANS PREBIAS NPN 50V 0.1A 3DFN
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
180 MHz
Power - Max:
340 mW
Mounting Type:
Surface Mount, Wettable Flank
Package / Case:
3-XDFN Exposed Pad
Supplier Device Package:
DFN1110D-3
Stock:
15000
Part Number:
PDTC143XQCZ
Manufacturer:
Nexperia
Description:
TRANS PREBIAS NPN 50V 0.1A 3DFN
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
230 MHz
Power - Max:
360 mW
Mounting Type:
Surface Mount, Wettable Flank
Package / Case:
3-XDFN Exposed Pad
Supplier Device Package:
DFN1412D-3
Stock:
15000
Part Number:
ADTC143XUAQ-7
Manufacturer:
Diodes Incorporated
Description:
TRANS PREBIAS NPN 50V SOT323
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
330 mW
Mounting Type:
Surface Mount
Package / Case:
SC-70, SOT-323
Supplier Device Package:
SOT-323
Stock:
0
Part Number:
DDTA114ECAQ-13-F
Manufacturer:
Diodes Incorporated
Description:
TRANS PREBIAS PNP 50V SOT23-3
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3
Stock:
0
Part Number:
RN1405-LXHF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS NPN 50V SMINI
Series:
-
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
250 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
S-Mini
Stock:
18000
Part Number:
RN2410-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
TRANS PREBIAS PNP 50V SMINI
Series:
-
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
200 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
S-Mini
Stock:
600
Part Number:
DTD543ZE3TL
Manufacturer:
Rohm Semiconductor
Description:
TRANS PREBIAS NPN 12V 0.5A EMT3
Series:
-
Transistor Type:
NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
12 V
Resistor - Base (R1):
-
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
260 MHz
Power - Max:
150 mW
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
EMT3
Stock:
225
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