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Bipolar (BJT) - Single, Pre-Biased (4216)

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Part Number:

RN2115,LF(CB

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V 0.1W SSM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

5120

1

Part Number:

RN1408,LF(B

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS NPN 50V 0.2W SMINI

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    S-Mini

Stock:

5632

1

Part Number:

FJV4101RMTF

Manufacturer:

Fairchild/ON Semiconductor

Description:

TRANS PREBIAS PNP 200MW SOT23-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    20 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3 (TO-236)

Stock:

6016

1

Part Number:

FJY4006R

Manufacturer:

Fairchild/ON Semiconductor

Description:

TRANS PREBIAS PNP 200MW SOT523F

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-89, SOT-490

  • Supplier Device Package:

    SOT-523F

Stock:

504000

1

Part Number:

FJN4305RTA

Manufacturer:

Fairchild/ON Semiconductor

Description:

TRANS PREBIAS PNP 300MW TO92-3

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

19362

1

Part Number:

RN2112,LF(CB

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS PREBIAS PNP 50V 0.1W SSM

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-75, SOT-416

  • Supplier Device Package:

    SSM

Stock:

71310

1

Part Number:

FJN3302RTA

Manufacturer:

Fairchild/ON Semiconductor

Description:

TRANS PREBIAS NPN 0.3W TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

350880

1

Part Number:

FJN3314RTA

Manufacturer:

Fairchild/ON Semiconductor

Description:

TRANS PREBIAS NPN 300MW TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    68 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

34860

1

Part Number:

FJN3305RTA

Manufacturer:

Fairchild/ON Semiconductor

Description:

TRANS PREBIAS NPN 300MW TO92-3

  • Series:

    -

  • Transistor Type:

    NPN - Pre-Biased

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

  • Supplier Device Package:

    TO-92-3

Stock:

54816

1

Part Number:

PDTA143ZQCZ

Manufacturer:

Nexperia

Description:

TRANS PREBIAS PNP 50V 0.1A 3DFN

  • Series:

    -

  • Transistor Type:

    PNP - Pre-Biased

  • Current - Collector (Ic) (Max):

    100 mA

  • Voltage - Collector Emitter Breakdown (Max):

    50 V

  • Resistor - Base (R1):

    -

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA

  • Frequency - Transition:

    180 MHz

  • Power - Max:

    360 mW

  • Mounting Type:

    Surface Mount, Wettable Flank

  • Package / Case:

    3-XDFN Exposed Pad

  • Supplier Device Package:

    DFN1412D-3

Stock:

15000

1

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