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PDTA114EEAF

50V|100mA|150mW
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TRANS PREBIAS PNP 150MW SC-75

Specifications

Brand
NXP
Package
SC-75, SOT-416
Packaging
—
Weight
—

Total Inventory

202pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how PDTA114EEAF from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerNXP USA Inc.
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
Frequency - Transition180MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75

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Datasheet & Documents

pdta114eeaf.pdf

PDF Document · 18 pages

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