Logo

Bipolar (BJT) - RF (1753)

Records 0
Reset All
Records 1753
Page 173/176

Part Number:

SD1330-05C

Manufacturer:

Microsemi

Description:

TRANSISTOR

  • Series:

    -

  • Transistor Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Frequency - Transition:

    -

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Current - Collector (Ic) (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

2N3799

Manufacturer:

Microchip Technology

Description:

SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Frequency - Transition:

    -

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    1.2W

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    300 @ 500µA, 5V

  • Current - Collector (Ic) (Max):

    50mA

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

  • Supplier Device Package:

    TO-18 (TO-206AA)

Stock:

0

1

Part Number:

2N3495

Manufacturer:

Microchip Technology

Description:

SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    PNP

  • Voltage - Collector Emitter Breakdown (Max):

    120V

  • Frequency - Transition:

    150MHz

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    400mW

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 50mA, 10V

  • Current - Collector (Ic) (Max):

    100mA

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-205AA, TO-5-3 Metal Can

  • Supplier Device Package:

    TO-5AA

Stock:

0

1

Part Number:

2N3497

Manufacturer:

Microchip Technology

Description:

SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    PNP

  • Voltage - Collector Emitter Breakdown (Max):

    120V

  • Frequency - Transition:

    150MHz

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    400mW

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 50mA, 10V

  • Current - Collector (Ic) (Max):

    100mA

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

  • Supplier Device Package:

    TO-18 (TO-206AA)

Stock:

0

1

Part Number:

2N3496

Manufacturer:

Microchip Technology

Description:

SMALL-SIGNAL BJT

  • Series:

    -

  • Transistor Type:

    PNP

  • Voltage - Collector Emitter Breakdown (Max):

    80V

  • Frequency - Transition:

    250MHz

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    600mW

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    35 @ 100mA, 10V

  • Current - Collector (Ic) (Max):

    100mA

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-206AA, TO-18-3 Metal Can

  • Supplier Device Package:

    TO-18 (TO-206AA)

Stock:

0

1

Part Number:

2N3866-PBFREE

Manufacturer:

Central Semiconductor Corp

Description:

RF TRANS NPN 30V 500MHZ TO39

  • Series:

    -

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    30V

  • Frequency - Transition:

    500MHz

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    5W

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    10 @ 50mA, 5V

  • Current - Collector (Ic) (Max):

    400mA

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-205AD, TO-39-3 Metal Can

  • Supplier Device Package:

    TO-39

Stock:

0

1

Part Number:

CP229-2N5109-CT20

Manufacturer:

Central Semiconductor Corp

Description:

RF TRANSISTOR TO-39

  • Series:

    -

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    20V

  • Frequency - Transition:

    1.2GHz

  • Noise Figure (dB Typ @ f):

    3dB @ 200MHz

  • Gain:

    11dB

  • Power - Max:

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    40 @ 50mA, 15V

  • Current - Collector (Ic) (Max):

    400mA

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

CP223-2N3866-CT

Manufacturer:

Central Semiconductor Corp

Description:

RF TRANSISTOR TO-39

  • Series:

    -

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    30V

  • Frequency - Transition:

    500MHz

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    10dB

  • Power - Max:

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    10 @ 50mA, 5V

  • Current - Collector (Ic) (Max):

    400mA

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

BFP182WE6327

Manufacturer:

Infineon Technologies

Description:

RF TRANSISTOR, L BAND, NPN

  • Series:

    -

  • Transistor Type:

    NPN

  • Voltage - Collector Emitter Breakdown (Max):

    12V

  • Frequency - Transition:

    8GHz

  • Noise Figure (dB Typ @ f):

    0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz

  • Gain:

    22dB

  • Power - Max:

    250mW

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 8V

  • Current - Collector (Ic) (Max):

    35mA

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-82A, SOT-343

  • Supplier Device Package:

    PG-SOT343-4

Stock:

0

1

Part Number:

CP616-2N5160-CM

Manufacturer:

Central Semiconductor Corp

Description:

RF TRANSISTOR TO-39

  • Series:

    -

  • Transistor Type:

    PNP

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Frequency - Transition:

    500MHz

  • Noise Figure (dB Typ @ f):

    -

  • Gain:

    -

  • Power - Max:

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    10 @ 50mA, 5V

  • Current - Collector (Ic) (Max):

    400mA

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯