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12V|70 @ 10mA, 8V|250mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
RF TRANSISTOR, L BAND, NPN
Specifications
- Brand
- Infineon Technologies
- Package
- SC-82A, SOT-343
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BFP182WE6327 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 8GHz | |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz | |
| Gain | 22dB | |
| Power - Max | 250mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 8V | |
| Current - Collector (Ic) (Max) | 35mA | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Supplier Device Package | PG-SOT343-4 |
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