Part Number:
SD1430-02
Manufacturer:
Microsemi
Description:
TRANSISTOR
Series:
-
Transistor Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Frequency - Transition:
-
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Current - Collector (Ic) (Max):
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
ON5088
Manufacturer:
NXP
Description:
RF SMALL SIGNAL BIPOLAR TRANSIST
Series:
-
Transistor Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Frequency - Transition:
-
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Current - Collector (Ic) (Max):
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
MT4S300U-TE85L-O-F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
X34 PB-F RADIO-FREQUENCY SIGE HE
Series:
-
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
4V
Frequency - Transition:
26.5GHz
Noise Figure (dB Typ @ f):
0.55dB @ 2GHz
Gain:
16.9dB
Power - Max:
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 10mA, 3V
Current - Collector (Ic) (Max):
50mA
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
SC-82A, SOT-343
Supplier Device Package:
USQ
Stock:
0
Part Number:
CA3227E
Manufacturer:
Intersil
Description:
NPN TRANSISTOR ARRAY
Series:
-
Transistor Type:
5 NPN
Voltage - Collector Emitter Breakdown (Max):
8V
Frequency - Transition:
3GHz
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
85mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 1mA, 6V
Current - Collector (Ic) (Max):
20mA
Operating Temperature:
175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
16-DIP (0.300", 7.62mm)
Supplier Device Package:
16-PDIP
Stock:
0
Part Number:
BFP520FE6327
Manufacturer:
Infineon Technologies
Description:
LOW-NOISE SI TRANSISTOR
Series:
-
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
3.5V
Frequency - Transition:
45GHz
Noise Figure (dB Typ @ f):
0.95dB @ 1.8GHz
Gain:
22.5dB
Power - Max:
100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 20mA, 2V
Current - Collector (Ic) (Max):
40mA
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
4-SMD, Flat Leads
Supplier Device Package:
4-TSFP
Stock:
0
Part Number:
2SC5108-Y-LF
Manufacturer:
Toshiba Semiconductor and Storage
Description:
RF TRANS NPN 10V 6GHZ SSM
Series:
-
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
10V
Frequency - Transition:
6GHz
Noise Figure (dB Typ @ f):
-
Gain:
11dB
Power - Max:
100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 5mA, 5V
Current - Collector (Ic) (Max):
30mA
Operating Temperature:
-
Mounting Type:
Surface Mount
Package / Case:
SC-75, SOT-416
Supplier Device Package:
SSM
Stock:
0
Part Number:
2SA1483-Y-TE12L-F
Manufacturer:
Toshiba Semiconductor and Storage
Description:
2SA1483-Y(TE12L,F)
Series:
-
Transistor Type:
PNP
Voltage - Collector Emitter Breakdown (Max):
45V
Frequency - Transition:
200MHz
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 10mA, 1V
Current - Collector (Ic) (Max):
200mA
Operating Temperature:
150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-243AA
Supplier Device Package:
PW-MINI
Stock:
0
Part Number:
C25-28A
Manufacturer:
Microsemi
Description:
TRANSISTOR
Series:
-
Transistor Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Frequency - Transition:
-
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Current - Collector (Ic) (Max):
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
2N2369
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Series:
-
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
15V
Frequency - Transition:
-
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
680mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 1V
Current - Collector (Ic) (Max):
200mA
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-206AA, TO-18-3 Metal Can
Supplier Device Package:
TO-18 (TO-206AA)
Stock:
0
Part Number:
MMBTH10Q-7-F
Manufacturer:
Diodes Incorporated
Description:
RF TRANSISTOR SOT23
Series:
-
Transistor Type:
NPN
Voltage - Collector Emitter Breakdown (Max):
25V
Frequency - Transition:
650MHz
Noise Figure (dB Typ @ f):
-
Gain:
-
Power - Max:
310mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Current - Collector (Ic) (Max):
50mA
Operating Temperature:
-65°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3
Stock:
0
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