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25V|60 @ 4mA, 10V|310mW
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RF TRANSISTOR SOT23
Specifications
- Brand
- Diodes Incorporated
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MMBTH10Q-7-F from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Diodes Incorporated | |
| Series | - | |
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 25V | |
| Frequency - Transition | 650MHz | |
| Noise Figure (dB Typ @ f) | - | |
| Gain | - | |
| Power - Max | 310mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V | |
| Current - Collector (Ic) (Max) | 50mA | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 |
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