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Bipolar (BJT) - Arrays (2018)

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Records 2018
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Part Number:

HN1B04F(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS NPN/PNP 30V 0.5A SM6

  • Series:

    -

  • Transistor Type:

    NPN, PNP

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    30V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 100mA, 1V

  • Power - Max:

    300mW

  • Frequency - Transition:

    200MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    SM6

Stock:

437

1

Part Number:

HN2A01FE-Y(TE85L,F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP 50V 0.15A ES6

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 2mA, 6V

  • Power - Max:

    100mW

  • Frequency - Transition:

    80MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

296

1

Part Number:

HN2A01FE-GR(TE85LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP 50V 0.15A ES6

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 6V

  • Power - Max:

    100mW

  • Frequency - Transition:

    800MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

138

1

Part Number:

HN1C01FU-Y(T5L,F,T

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN 50V 0.15A US6

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 2mA, 6V

  • Power - Max:

    200mW

  • Frequency - Transition:

    80MHz

  • Operating Temperature:

    125°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

213

1

Part Number:

HN2C01FE-GR(T5L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN 50V 0.15A ES6

  • Series:

    -

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 6V

  • Power - Max:

    100mW

  • Frequency - Transition:

    60MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

251

1

Part Number:

2N6989UTX

Manufacturer:

TT Electronics/Optek Technology

Description:

TRANS 4NPN 50V 0.8A SMT

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    1W

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    20-CLCC

  • Supplier Device Package:

    20-CLCC

Stock:

215

1

Part Number:

SG2023J-883B

Manufacturer:

Microsemi

Description:

TRANS 7NPN DARL 95V 0.5A 16JDIP

  • Series:

    -

  • Transistor Type:

    7 NPN Darlington

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    95V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 500µA, 350mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    1000 @ 350mA, 2V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    -

  • Supplier Device Package:

    16-CDIP

Stock:

460

1

Part Number:

SG2013J-883B

Manufacturer:

Microsemi

Description:

TRANS 7NPN DARL 50V 0.6A 16JDIP

  • Series:

    -

  • Transistor Type:

    7 NPN Darlington

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    1.9V @ 600µA, 500mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    900 @ 500mA, 2V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    -

  • Supplier Device Package:

    16-CDIP

Stock:

454

1

Part Number:

2N6989

Manufacturer:

Microsemi

Description:

TRANS 4NPN 50V 0.8A TO116

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    800mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    1.5W

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

325

1

Part Number:

2N3811U

Manufacturer:

Microsemi

Description:

TRANS 2PNP 60V 0.05A TO-78

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    50mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    300 @ 1mA, 5V

  • Power - Max:

    350mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

354

1

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