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50V|800mA|1.5W
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TRANS 4NPN 50V 0.8A TO116
Specifications
- Brand
- Microsemi
- Package
- 14-DIP (0.300", 7.62mm)
- Packaging
- —
- Weight
- —
Total Inventory
325pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how 2N6989 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Transistor Type | 4 NPN (Quad) | |
| Current - Collector (Ic) (Max) | 800mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V | |
| Power - Max | 1.5W | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 14-DIP (0.300", 7.62mm) | |
| Supplier Device Package | TO-116 |
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