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Bipolar (BJT) - Arrays (2018)

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Records 2018
Page 15/202

Part Number:

MPQ3725A

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 4NPN 50V 1A

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    1A

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    450mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    500nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 500mA, 2V

  • Power - Max:

    1W

  • Frequency - Transition:

    200MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

150

1

Part Number:

MPQ2484

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 4NPN 40V

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    20nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Power - Max:

    3W

  • Frequency - Transition:

    50MHz

  • Operating Temperature:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

349

1

Part Number:

MPQ2483

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 4NPN 40V

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    -

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    -

  • Current - Collector Cutoff (Max):

    20nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    -

  • Power - Max:

    3W

  • Frequency - Transition:

    50MHz

  • Operating Temperature:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

417

1

Part Number:

MPQ2222A

Manufacturer:

Central Semiconductor Corp

Description:

TRANS 4NPN 40V 0.5A

  • Series:

    -

  • Transistor Type:

    4 NPN (Quad)

  • Current - Collector (Ic) (Max):

    500mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    1V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    650mW

  • Frequency - Transition:

    200MHz

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    14-DIP (0.300", 7.62mm)

  • Supplier Device Package:

    TO-116

Stock:

193

1

Part Number:

SSM2220SZ-REEL

Manufacturer:

Analog Devices

Description:

TRANS 2PNP 36V 0.02A 8SOIC

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual) Matched Pair

  • Current - Collector (Ic) (Max):

    20mA

  • Voltage - Collector Emitter Breakdown (Max):

    36V

  • Vce Saturation (Max) @ Ib, Ic:

    100mV @ 100µA, 1mA

  • Current - Collector Cutoff (Max):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 1mA, 36V

  • Power - Max:

    -

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

  • Supplier Device Package:

    8-SOIC

Stock:

286

1

Part Number:

JANTX2N5796U

Manufacturer:

Microsemi

Description:

TRANS 2PNP 60V 0.6A U-PKG

  • Series:

    Military, MIL-PRF-19500/496

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    60V

  • Vce Saturation (Max) @ Ib, Ic:

    1.6V @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    10nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, No Lead

  • Supplier Device Package:

    6-SMD

Stock:

287

1

Part Number:

JANTX2N5794

Manufacturer:

Microsemi

Description:

TRANS 2NPN 40V 0.6A TO-78

  • Series:

    Military, MIL-PRF-19500/495

  • Transistor Type:

    2 NPN (Dual)

  • Current - Collector (Ic) (Max):

    600mA

  • Voltage - Collector Emitter Breakdown (Max):

    40V

  • Vce Saturation (Max) @ Ib, Ic:

    900mV @ 30mA, 300mA

  • Current - Collector Cutoff (Max):

    10µA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    100 @ 150mA, 10V

  • Power - Max:

    600mW

  • Frequency - Transition:

    -

  • Operating Temperature:

    -65°C ~ 200°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-78-6 Metal Can

  • Supplier Device Package:

    TO-78-6

Stock:

324

1

Part Number:

MCH6536-TL-E

Manufacturer:

ON Semiconductor

Description:

TRANS NPN/PNP 15V/12V 6MCPH

  • Series:

    -

  • Transistor Type:

    NPN, PNP

  • Current - Collector (Ic) (Max):

    700mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    15V, 12V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 10mA, 200mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    300 @ 10mA, 2V

  • Power - Max:

    550mW

  • Frequency - Transition:

    330MHz, 490MHz

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-SMD, Flat Leads

  • Supplier Device Package:

    6-MCPH

Stock:

365

1
HN1A01F-GR(TE85L,F

Part Number:

HN1A01F-GR(TE85L,F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP 50V 0.15A SM6

  • Series:

    -

  • Transistor Type:

    2 PNP (Dual)

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 6V

  • Power - Max:

    300mW

  • Frequency - Transition:

    80MHz

  • Operating Temperature:

    125°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    SM6

Stock:

105

1
HN1B01F-GR(TE85L,F

Part Number:

HN1B01F-GR(TE85L,F

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS NPN/PNP 50V 0.15A SM6

  • Series:

    -

  • Transistor Type:

    NPN, PNP

  • Current - Collector (Ic) (Max):

    150mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 10mA, 100mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    200 @ 2mA, 6V

  • Power - Max:

    300mW

  • Frequency - Transition:

    120MHz

  • Operating Temperature:

    125°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    SM6

Stock:

282

1

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