Part Number:
BAT54-7-G
Manufacturer:
Diodes Incorporated
Description:
DIODE SCHOTTKY 30V 200MA SOT23-3
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
800 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
2 µA @ 25 V
Capacitance @ Vr, F:
10pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
SOT-23-3
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
JANTXV1N5623US-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 1KV 1A D-5A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
500 ns
Current - Reverse Leakage @ Vr:
500 nA @ 1 V
Capacitance @ Vr, F:
15pF @ 12V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF, A
Supplier Device Package:
D-5A
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
TRS3E65F-S1Q
Manufacturer:
Toshiba Semiconductor and Storage
Description:
DIODE SIL CARB 650V 3A TO220-2L
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
20 µA @ 650 V
Capacitance @ Vr, F:
12pF @ 650V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220-2L
Operating Temperature - Junction:
175°C (Max)
Stock:
0
Part Number:
FR3GB-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
150 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
80pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
JANTXV1N3295
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 100A DO205AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 310 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 mA @ 1000 V
Capacitance @ Vr, F:
-
Mounting Type:
Chassis, Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
JANTXV1N3294
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 800V 100A DO205AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 310 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 mA @ 800 V
Capacitance @ Vr, F:
-
Mounting Type:
Chassis, Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
JANTXV1N3293
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 600V 100A DO205AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 310 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 mA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Chassis, Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
JANTXV1N3291
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 400V 100A DO205AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 310 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 mA @ 400 V
Capacitance @ Vr, F:
-
Mounting Type:
Chassis, Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
JANTXV1N3289
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 200V 100A DO205AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 310 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 mA @ 200 V
Capacitance @ Vr, F:
-
Mounting Type:
Chassis, Stud Mount
Package / Case:
DO-205AA, DO-8, Stud
Supplier Device Package:
DO-205AA (DO-8)
Operating Temperature - Junction:
-65°C ~ 200°C
Stock:
0
Part Number:
SIDC23D60E6X1SA5
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 50A DIE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
50A
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 50 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
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