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Part Number:

BAT54-7-G

Manufacturer:

Diodes Incorporated

Description:

DIODE SCHOTTKY 30V 200MA SOT23-3

  • Series:

    -

  • Diode Type:

    Schottky

  • Voltage - DC Reverse (Vr) (Max):

    30 V

  • Current - Average Rectified (Io):

    200mA

  • Voltage - Forward (Vf) (Max) @ If:

    800 mV @ 100 mA

  • Speed:

    Small Signal =< 200mA (Io), Any Speed

  • Reverse Recovery Time (trr):

    5 ns

  • Current - Reverse Leakage @ Vr:

    2 µA @ 25 V

  • Capacitance @ Vr, F:

    10pF @ 1V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

  • Supplier Device Package:

    SOT-23-3

  • Operating Temperature - Junction:

    -65°C ~ 150°C

Stock:

0

1

Part Number:

JANTXV1N5623US-TR

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 1KV 1A D-5A

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    1000 V

  • Current - Average Rectified (Io):

    1A

  • Voltage - Forward (Vf) (Max) @ If:

    1.6 V @ 3 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    500 ns

  • Current - Reverse Leakage @ Vr:

    500 nA @ 1 V

  • Capacitance @ Vr, F:

    15pF @ 12V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SQ-MELF, A

  • Supplier Device Package:

    D-5A

  • Operating Temperature - Junction:

    -65°C ~ 175°C

Stock:

0

1

Part Number:

TRS3E65F-S1Q

Manufacturer:

Toshiba Semiconductor and Storage

Description:

DIODE SIL CARB 650V 3A TO220-2L

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    1.6 V @ 3 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    20 µA @ 650 V

  • Capacitance @ Vr, F:

    12pF @ 650V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2

  • Supplier Device Package:

    TO-220-2L

  • Operating Temperature - Junction:

    175°C (Max)

Stock:

0

1

Part Number:

FR3GB-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    400 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    1.3 V @ 3 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    150 ns

  • Current - Reverse Leakage @ Vr:

    10 µA @ 400 V

  • Capacitance @ Vr, F:

    80pF @ 4V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    DO-214AA, SMB

  • Supplier Device Package:

    DO-214AA (SMB)

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

JANTXV1N3295

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 100A DO205AA

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    -

  • Current - Average Rectified (Io):

    100A

  • Voltage - Forward (Vf) (Max) @ If:

    1.55 V @ 310 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    10 mA @ 1000 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Chassis, Stud Mount

  • Package / Case:

    DO-205AA, DO-8, Stud

  • Supplier Device Package:

    DO-205AA (DO-8)

  • Operating Temperature - Junction:

    -65°C ~ 200°C

Stock:

0

1

Part Number:

JANTXV1N3294

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 800V 100A DO205AA

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    800 V

  • Current - Average Rectified (Io):

    100A

  • Voltage - Forward (Vf) (Max) @ If:

    1.55 V @ 310 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    10 mA @ 800 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Chassis, Stud Mount

  • Package / Case:

    DO-205AA, DO-8, Stud

  • Supplier Device Package:

    DO-205AA (DO-8)

  • Operating Temperature - Junction:

    -65°C ~ 200°C

Stock:

0

1

Part Number:

JANTXV1N3293

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 600V 100A DO205AA

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    600 V

  • Current - Average Rectified (Io):

    100A

  • Voltage - Forward (Vf) (Max) @ If:

    1.55 V @ 310 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    10 mA @ 600 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Chassis, Stud Mount

  • Package / Case:

    DO-205AA, DO-8, Stud

  • Supplier Device Package:

    DO-205AA (DO-8)

  • Operating Temperature - Junction:

    -65°C ~ 200°C

Stock:

0

1

Part Number:

JANTXV1N3291

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 400V 100A DO205AA

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    400 V

  • Current - Average Rectified (Io):

    100A

  • Voltage - Forward (Vf) (Max) @ If:

    1.55 V @ 310 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    10 mA @ 400 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Chassis, Stud Mount

  • Package / Case:

    DO-205AA, DO-8, Stud

  • Supplier Device Package:

    DO-205AA (DO-8)

  • Operating Temperature - Junction:

    -65°C ~ 200°C

Stock:

0

1

Part Number:

JANTXV1N3289

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 200V 100A DO205AA

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    200 V

  • Current - Average Rectified (Io):

    100A

  • Voltage - Forward (Vf) (Max) @ If:

    1.55 V @ 310 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    10 mA @ 200 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Chassis, Stud Mount

  • Package / Case:

    DO-205AA, DO-8, Stud

  • Supplier Device Package:

    DO-205AA (DO-8)

  • Operating Temperature - Junction:

    -65°C ~ 200°C

Stock:

0

1

Part Number:

SIDC23D60E6X1SA5

Manufacturer:

Infineon Technologies

Description:

DIODE GEN PURP 600V 50A DIE

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    600 V

  • Current - Average Rectified (Io):

    50A

  • Voltage - Forward (Vf) (Max) @ If:

    1.25 V @ 50 A

  • Speed:

    Standard Recovery >500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    27 µA @ 600 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

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