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Rectifiers - Single (53791)

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Part Number:

1N6539-TR

Manufacturer:

Microchip Technology

Description:

RECTIFIER UFR,FRR

  • Series:

    -

  • Diode Type:

    -

  • Voltage - DC Reverse (Vr) (Max):

    -

  • Current - Average Rectified (Io):

    -

  • Voltage - Forward (Vf) (Max) @ If:

    -

  • Speed:

    -

  • Reverse Recovery Time (trr):

    -

  • Current - Reverse Leakage @ Vr:

    -

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

  • Operating Temperature - Junction:

    -

Stock:

0

1

Part Number:

MUR310SH

Manufacturer:

Taiwan Semiconductor Corporation

Description:

DIODE GEN PURP 100V 3A DO214AB

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    100 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    875 mV @ 3 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    25 ns

  • Current - Reverse Leakage @ Vr:

    5 µA @ 100 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    DO-214AB, SMC

  • Supplier Device Package:

    DO-214AB (SMC)

  • Operating Temperature - Junction:

    -55°C ~ 175°C

Stock:

9000

1

Part Number:

MUR310SB

Manufacturer:

Taiwan Semiconductor Corporation

Description:

25NS, 3A, 100V, ULTRA FAST RECOV

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    200 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    900 mV @ 3 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    25 ns

  • Current - Reverse Leakage @ Vr:

    5 µA @ 200 V

  • Capacitance @ Vr, F:

    45pF @ 4V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    DO-214AA, SMB

  • Supplier Device Package:

    DO-214AA (SMB)

  • Operating Temperature - Junction:

    -55°C ~ 175°C

Stock:

18000

1

Part Number:

WNSC2D10650TJ

Manufacturer:

WeEn Semiconductors

Description:

DIODE SIL CARBIDE 650V 10A 5DFN

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 10 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    50 µA @ 650 V

  • Capacitance @ Vr, F:

    310pF @ 1V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    4-VSFN Exposed Pad

  • Supplier Device Package:

    5-DFN (8x8)

  • Operating Temperature - Junction:

    175°C

Stock:

2670

1

Part Number:

RS3AC-HF

Manufacturer:

Comchip Technology

Description:

DIODE GEN PURP 50V 3A DO214AB

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    50 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    1.3 V @ 3 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    150 ns

  • Current - Reverse Leakage @ Vr:

    5 µA @ 50 V

  • Capacitance @ Vr, F:

    40pF @ 4V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    DO-214AB, SMC

  • Supplier Device Package:

    DO-214AB (SMC)

  • Operating Temperature - Junction:

    -55°C ~ 150°C

Stock:

0

1

Part Number:

WNSC2D10650XQ

Manufacturer:

WeEn Semiconductors

Description:

DIODE SIL CARB 650V 10A TO220F

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 10 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    50 µA @ 650 V

  • Capacitance @ Vr, F:

    310pF @ 1V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-2 Full Pack, Isolated Tab

  • Supplier Device Package:

    TO-220F

  • Operating Temperature - Junction:

    175°C

Stock:

0

1

Part Number:

WNSC2D10650WQ

Manufacturer:

WeEn Semiconductors

Description:

DIODE SIL CARB 650V 10A TO247-2

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 10 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    50 µA @ 650 V

  • Capacitance @ Vr, F:

    310pF @ 1V, 1MHz

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-2

  • Supplier Device Package:

    TO-247-2

  • Operating Temperature - Junction:

    175°C

Stock:

3453

1

Part Number:

JANTXV1N6621-TR

Manufacturer:

Microchip Technology

Description:

DIODE GEN PURP 440V 1.2A

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    440 V

  • Current - Average Rectified (Io):

    1.2A

  • Voltage - Forward (Vf) (Max) @ If:

    1.4 V @ 1.2 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    30 ns

  • Current - Reverse Leakage @ Vr:

    500 nA @ 440 V

  • Capacitance @ Vr, F:

    -

  • Mounting Type:

    Through Hole

  • Package / Case:

    A, Axial

  • Supplier Device Package:

    A, Axial

  • Operating Temperature - Junction:

    -65°C ~ 150°C

Stock:

0

1

Part Number:

WNSC2D10650DJ

Manufacturer:

WeEn Semiconductors

Description:

DIODE SIL CARBIDE 650V 10A DPAK

  • Series:

    -

  • Diode Type:

    SiC (Silicon Carbide) Schottky

  • Voltage - DC Reverse (Vr) (Max):

    650 V

  • Current - Average Rectified (Io):

    10A

  • Voltage - Forward (Vf) (Max) @ If:

    1.7 V @ 10 A

  • Speed:

    No Recovery Time > 500mA (Io)

  • Reverse Recovery Time (trr):

    0 ns

  • Current - Reverse Leakage @ Vr:

    50 µA @ 650 V

  • Capacitance @ Vr, F:

    310pF @ 1V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

  • Supplier Device Package:

    DPAK

  • Operating Temperature - Junction:

    175°C

Stock:

22380

1

Part Number:

JANTXV1N5807URS-TR

Manufacturer:

Microchip Technology

Description:

UFR,FRR

  • Series:

    -

  • Diode Type:

    Standard

  • Voltage - DC Reverse (Vr) (Max):

    50 V

  • Current - Average Rectified (Io):

    3A

  • Voltage - Forward (Vf) (Max) @ If:

    875 mV @ 4 A

  • Speed:

    Fast Recovery =< 500ns, > 200mA (Io)

  • Reverse Recovery Time (trr):

    30 ns

  • Current - Reverse Leakage @ Vr:

    5 µA @ 50 V

  • Capacitance @ Vr, F:

    60pF @ 10V, 1MHz

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SQ-MELF, B

  • Supplier Device Package:

    B, SQ-MELF

  • Operating Temperature - Junction:

    -65°C ~ 175°C

Stock:

0

1

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