Part Number:
1N6539-TR
Manufacturer:
Microchip Technology
Description:
RECTIFIER UFR,FRR
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
MUR310SH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 100V 3A DO214AB
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
25 ns
Current - Reverse Leakage @ Vr:
5 µA @ 100 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
9000
Part Number:
MUR310SB
Manufacturer:
Taiwan Semiconductor Corporation
Description:
25NS, 3A, 100V, ULTRA FAST RECOV
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
25 ns
Current - Reverse Leakage @ Vr:
5 µA @ 200 V
Capacitance @ Vr, F:
45pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
18000
Part Number:
WNSC2D10650TJ
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARBIDE 650V 10A 5DFN
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
4-VSFN Exposed Pad
Supplier Device Package:
5-DFN (8x8)
Operating Temperature - Junction:
175°C
Stock:
2670
Part Number:
RS3AC-HF
Manufacturer:
Comchip Technology
Description:
DIODE GEN PURP 50V 3A DO214AB
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
150 ns
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Capacitance @ Vr, F:
40pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
WNSC2D10650XQ
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 650V 10A TO220F
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2 Full Pack, Isolated Tab
Supplier Device Package:
TO-220F
Operating Temperature - Junction:
175°C
Stock:
0
Part Number:
WNSC2D10650WQ
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARB 650V 10A TO247-2
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-2
Supplier Device Package:
TO-247-2
Operating Temperature - Junction:
175°C
Stock:
3453
Part Number:
JANTXV1N6621-TR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 440V 1.2A
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
440 V
Current - Average Rectified (Io):
1.2A
Voltage - Forward (Vf) (Max) @ If:
1.4 V @ 1.2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
500 nA @ 440 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
A, Axial
Supplier Device Package:
A, Axial
Operating Temperature - Junction:
-65°C ~ 150°C
Stock:
0
Part Number:
WNSC2D10650DJ
Manufacturer:
WeEn Semiconductors
Description:
DIODE SIL CARBIDE 650V 10A DPAK
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Capacitance @ Vr, F:
310pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package:
DPAK
Operating Temperature - Junction:
175°C
Stock:
22380
Part Number:
JANTXV1N5807URS-TR
Manufacturer:
Microchip Technology
Description:
UFR,FRR
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
50 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 4 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
5 µA @ 50 V
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SQ-MELF, B
Supplier Device Package:
B, SQ-MELF
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
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