Part Number:
MUR315SH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 150V 3A DO214AB
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
25 ns
Current - Reverse Leakage @ Vr:
5 µA @ 150 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
DO-214AB (SMC)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
9000
Part Number:
MUR315SB
Manufacturer:
Taiwan Semiconductor Corporation
Description:
25NS, 3A, 150V, ULTRA FAST RECOV
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
900 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
25 ns
Current - Reverse Leakage @ Vr:
5 µA @ 200 V
Capacitance @ Vr, F:
45pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
18000
Part Number:
PMEG150G30ELPX
Manufacturer:
Nexperia
Description:
DIODE SOD128/CFP5
Series:
-
Diode Type:
SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
850 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
7 ns
Current - Reverse Leakage @ Vr:
30 nA @ 150 V
Capacitance @ Vr, F:
95pF @ 1V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-128
Supplier Device Package:
SOD-128/CFP5
Operating Temperature - Junction:
175°C
Stock:
20502
Part Number:
B0540WS-HF
Manufacturer:
Comchip Technology
Description:
DIODE SCHOTTKY 40V 500MA SOD323
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
500mA
Voltage - Forward (Vf) (Max) @ If:
510 mV @ 500 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
20 µA @ 40 V
Capacitance @ Vr, F:
170pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SC-76, SOD-323
Supplier Device Package:
SOD-323
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
5157
Part Number:
JAN1N6942UTK3AS-TR
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 45V 150A THINKEY3
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
150A
Voltage - Forward (Vf) (Max) @ If:
460 mV @ 50 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
5 mA @ 45 V
Capacitance @ Vr, F:
7000pF @ 5V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
ThinKey™3
Supplier Device Package:
ThinKey™3
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
SFS1006GH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 400V 10A TO263AB
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
1 µA @ 400 V
Capacitance @ Vr, F:
50pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package:
TO-263AB (D2PAK)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
4800
Part Number:
CDBD540-HF
Manufacturer:
Comchip Technology
Description:
DIODE SCHOTTKY 40V 5A DPAK
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
550 mV @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 40 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package:
DPAK
Operating Temperature - Junction:
-55°C ~ 125°C
Stock:
0
Part Number:
GS1ZFL-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
2000 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.15 V @ 1 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
2.5 µs
Current - Reverse Leakage @ Vr:
1 µA @ 2000 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
DO-221AC, SMA Flat Leads
Supplier Device Package:
DO-221AC (SMA-FL)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
SDS065J012S3-ISARH
Manufacturer:
Luminus Devices Inc.
Description:
DIODE 650V-12A DFN8*8-4L
Series:
Sanan DFN8
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
44A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 12 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
36 µA @ 650 V
Capacitance @ Vr, F:
651pF @ 0V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
4-PowerVSFN
Supplier Device Package:
4-DFN (8x8)
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
RBQ3RSM65BTL1
Manufacturer:
Rohm Semiconductor
Description:
DIODE SCHOTTKY 65V 3A TO277A
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
65 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
570 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
90 µA @ 65 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
TO-277A
Operating Temperature - Junction:
150°C
Stock:
11964
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