Part Number:
SRAF590H
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE SCHOTTKY 90V 5A ITO220AC
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
90 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
850 mV @ 5 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 90 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
TO-220-2 Full Pack
Supplier Device Package:
ITO-220AC
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
DSP45-12AZ-TUB
Manufacturer:
IXYS
Description:
DIODE GEN PURP 1.2KV 45A TO268AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
45A
Voltage - Forward (Vf) (Max) @ If:
1.26 V @ 45 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
40 µA @ 1200 V
Capacitance @ Vr, F:
18pF @ 400V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package:
TO-268AA (D3Pak-HV)
Operating Temperature - Junction:
-40°C ~ 175°C
Stock:
0
Part Number:
SS320BF-HF
Manufacturer:
Comchip Technology
Description:
DIODE SCHOTTKY 200V 3A SMBF
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
300 µA @ 200 V
Capacitance @ Vr, F:
400pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-221AA, SMB Flat Leads
Supplier Device Package:
SMBF
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
SCS220AGC17
Manufacturer:
Rohm Semiconductor
Description:
DIODE SIC 650V 20A TO220ACFP
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 20 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
400 µA @ 600 V
Capacitance @ Vr, F:
730pF @ 1V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-220-2
Supplier Device Package:
TO-220ACFP
Operating Temperature - Junction:
175°C
Stock:
2220
Part Number:
SK62L-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
20 V
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
650 mV @ 6 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 mA @ 20 V
Capacitance @ Vr, F:
200pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AB, SMC
Supplier Device Package:
SMC (DO-214AB)
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
0
Part Number:
RS3JB-HF
Manufacturer:
Comchip Technology
Description:
DIODE GP 600V 3A SMB/DO-214AA
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 3 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
250 ns
Current - Reverse Leakage @ Vr:
5 µA @ 600 V
Capacitance @ Vr, F:
40pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
SMB/DO-214AA
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
7410
Part Number:
SICPT2060Y-BP
Manufacturer:
Micro Commercial Co
Description:
SCHOTTKY DIODES
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.55 V @ 20 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
25 µA @ 650 V
Capacitance @ Vr, F:
1157pF @ 0V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-2
Supplier Device Package:
TO-247AD
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
SICR40650WT
Manufacturer:
SMC Diode Solutions
Description:
DIODE SCHOTTKY 650V 20A TO247AD
Series:
-
Diode Type:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
2 V @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
300 µA @ 650 V
Capacitance @ Vr, F:
650pF @ 0V, 1MHz
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247AD
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
36
Part Number:
STTH30RQ06L2Y-TR
Manufacturer:
STMicroelectronics
Description:
DIODE GEN PURP 600V 30A HU3PAK
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
30A
Voltage - Forward (Vf) (Max) @ If:
2.95 V @ 30 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
55 ns
Current - Reverse Leakage @ Vr:
40 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package:
HU3PAK
Operating Temperature - Junction:
-40°C ~ 175°C
Stock:
900
Part Number:
PU2DLWH
Manufacturer:
Taiwan Semiconductor Corporation
Description:
DIODE GEN PURP 200V 2A SOD123W
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
930 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
25 ns
Current - Reverse Leakage @ Vr:
2 µA @ 200 V
Capacitance @ Vr, F:
33pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
SOD-123W
Supplier Device Package:
SOD-123W
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
51882
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