Part Number:
JANTXV1N5816R
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 150V 20A DO203AA
Series:
-
Diode Type:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 20 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
35 ns
Current - Reverse Leakage @ Vr:
10 µA @ 150 V
Capacitance @ Vr, F:
300pF @ 10V, 1MHz
Mounting Type:
Stud Mount
Package / Case:
DO-203AA, DO-4, Stud
Supplier Device Package:
DO-203AA (DO-4)
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
JAN1N5819UR-1-TR
Manufacturer:
Microchip Technology
Description:
DIODE SCHOTTKY 45V 1A DO213AB
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
490 mV @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
50 µA @ 45 V
Capacitance @ Vr, F:
70pF @ 5V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-213AB, MELF (Glass)
Supplier Device Package:
DO-213AB (MELF, LL41)
Operating Temperature - Junction:
-65°C ~ 125°C
Stock:
0
Part Number:
JANTXV1N3893AR
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 400V 20A DO203AA
Series:
-
Diode Type:
Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max):
400 V
Current - Average Rectified (Io):
20A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 38 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
150 ns
Current - Reverse Leakage @ Vr:
10 µA @ 400 V
Capacitance @ Vr, F:
115pF @ 10V, 1MHz
Mounting Type:
Stud Mount
Package / Case:
DO-203AA, DO-4, Stud
Supplier Device Package:
DO-203AA (DO-4)
Operating Temperature - Junction:
-65°C ~ 175°C
Stock:
0
Part Number:
SS220B-HF
Manufacturer:
Comchip Technology
Description:
DIODE SCHOTTKY 200V 2A DO214AA
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io):
2A
Voltage - Forward (Vf) (Max) @ If:
950 mV @ 2 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
300 µA @ 200 V
Capacitance @ Vr, F:
110pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
DO-214AA, SMB
Supplier Device Package:
DO-214AA (SMB)
Operating Temperature - Junction:
-55°C ~ 125°C
Stock:
0
Part Number:
MBR10U100H-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
Diode Type:
Schottky
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
850 mV @ 10 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 100 V
Capacitance @ Vr, F:
320pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
TO-277
Operating Temperature - Junction:
-55°C ~ 175°C
Stock:
0
Part Number:
RB521S-30FHTE61
Manufacturer:
Rohm Semiconductor
Description:
DIODE SCHOTTKY SMD
Series:
-
Diode Type:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-
Stock:
0
Part Number:
SIDC09D60F6X1SA5
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 30A DIE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
30A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 30 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-40°C ~ 175°C
Stock:
0
Part Number:
SIDC09D60F6X1SA4
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 30A DIE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
30A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 30 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-40°C ~ 175°C
Stock:
0
Part Number:
SIDC09D60F6X1SA1
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 30A DIE
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
30A
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 30 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
27 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Operating Temperature - Junction:
-40°C ~ 175°C
Stock:
0
Part Number:
APT100D60BG
Manufacturer:
Microchip Technology
Description:
DIODE GEN PURP 600V 100A TO247
Series:
-
Diode Type:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
100A
Voltage - Forward (Vf) (Max) @ If:
2 V @ 100 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
250 µA @ 600 V
Capacitance @ Vr, F:
-
Mounting Type:
Through Hole
Package / Case:
TO-247-2
Supplier Device Package:
TO-247
Operating Temperature - Junction:
-55°C ~ 150°C
Stock:
159
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