页 537 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IRGP4066DPBF	Infineon Technologies	IGBT 600V 140A 454W TO247AC IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 140A Current - Collector Pulsed (Icm): 225A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 454W Switching Energy: 2.47mJ (on), 2.16mJ (off) Input Type: Standard Gate Charge: 150nC Td (on/off) @ 25°C: 50ns/200ns Test Condition: 400V, 75A, 10 Ohm, 15V Reverse Recovery Time (trr): 155ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	封装: TO-247-3	库存30,600
IPB80N06S2L07ATMA1	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,232
SPU08P06P	Infineon Technologies	MOSFET P-CH 60V 8.83A TO-251 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	封装: TO-251-3 Short Leads, IPak, TO-251AA	库存7,616
IPL65R420E6AUMA1	Infineon Technologies	MOSFET N-CH 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Thin-Pak (8x8) Package / Case: 4-PowerTSFN	封装: 4-PowerTSFN	库存2,320
IPT60R150G7XTMA1	Infineon Technologies	MOSFET N-CH 650V 17A HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 260µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 902pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8 Package / Case: 8-PowerSFN	封装: 8-PowerSFN	库存6,496
IRF7580MTRPBF	Infineon Technologies	MOSFET N-CH 60V 114A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DirectFET? Isometric ME Package / Case: DirectFET? Isometric ME	封装: DirectFET? Isometric ME	库存3,232
IRFSL4310ZPBF	Infineon Technologies	MOSFET N-CH 100V 120A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存8,328
BSD340NH6327XTSA1	Infineon Technologies	SMALL SIGNAL+P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-TSSOP, SC-88, SOT-363	库存6,816
BB689H7903XTMA1	Infineon Technologies	DIODE TUNING 30V 20MA SCD80 Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio: 23.2 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Q @ Vr, F: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-80 Supplier Device Package: PG-SCD80-2	封装: SC-80	库存7,840
IDW30E60FKSA1	Infineon Technologies	DIODE GEN PURP 600V 60A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-247-3	库存5,856
BAV99E6327	Infineon Technologies	DIODE ARRAY GP 80V 200MA SOT23 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存717,360
IRS2336STRPBF	Infineon Technologies	IC GATE DRIVER HV 3PHASE 28-SOIC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封装: 28-SOIC (0.295", 7.50mm Width)	库存6,848
XE162FN24F80LAAFXUMA1	Infineon Technologies	IC MCU 16BIT 192KB FLASH 64LQFP Core Processor: C166SV2 Core Size: 16-Bit Speed: 80MHz Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 192KB (192K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 26K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 9x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Exposed Pad Supplier Device Package: PG-LQFP-64-6	封装: 64-LQFP Exposed Pad	库存2,256
XC2765X104F80LRABKXUMA1	Infineon Technologies	IC MCU 16BIT 832KB FLASH 100LQFP Core Processor: C166SV2 Core Size: 16/32-Bit Speed: 80MHz Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Number of I/O: 75 Program Memory Size: 832KB (832K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 50K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: 100-LQFP Exposed Pad Supplier Device Package: PG-LQFP-100-8	封装: 100-LQFP Exposed Pad	库存5,520
XMC4104F64F128BAXQMA1	Infineon Technologies	IC MCU 32BIT 128KB FLASH 64TQFP Core Processor: ARM? Cortex?-M4 Core Size: 32-Bit Speed: 80MHz Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB Peripherals: DMA, I2S, LED, POR, PWM, WDT Number of I/O: 35 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 20K x 8 Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V Data Converters: A/D 10x12b; D/A 2x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-TQFP Exposed Pad Supplier Device Package: PG-TQFP-64-19	封装: 64-TQFP Exposed Pad	库存2,576
SP370251060XTMA3	Infineon Technologies	BOARD MOUNT PRESSURE SENSOR Sensor Type: Tire Pressure Monitoring (TPMS) Output Type: RF Operating Temperature: -40°C ~ 125°C (TA)	封装: -	库存3,402
TLE4955CE4AAMA1	Infineon Technologies	MAGNETIC SWITCH SPEC PURP SSO-2 Function: Special Purpose Technology: Hall Effect Polarization: North Pole, South Pole Sensing Range: -30mT Trip, 30mT Release Test Condition: 25°C Voltage - Supply: 4 V ~ 20 V Current - Supply (Max): 8mA Current - Output (Max): 16mA Output Type: PWM Features: - Operating Temperature: -40°C ~ 110°C Package / Case: 2-SIP, SSO-2-53 Supplier Device Package: PG-SSO-2-53	封装: 2-SIP, SSO-2-53	库存7,956
C164CI8RMCAFXUMA1	Infineon Technologies	IC MCU 16BIT 80MQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: 80-MQFP	封装: -	库存7,232
FF600R12KE4BOSA1	Infineon Technologies	IGBT MODULE 1200V 600A IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 600 A Power - Max: - Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 38 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存42
IPD60R360CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 7A TO252-3-313 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存4,608
TD104N14KOFAHPSA2	Infineon Technologies	THYR / DIODE MODULE DK Structure: Common Anode - All SCRs Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 1.4 kV Current - On State (It (AV)) (Max): 102 A Current - On State (It (RMS)) (Max): 160 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Current - Gate Trigger (Igt) (Max): 120 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz Current - Hold (Ih) (Max): 200 mA Operating Temperature: 140°C (TJ) Mounting Type: Chassis Mount Package / Case: Module	封装: -	Request a Quote
CYT4BB5CEBQ1AEEGS	Infineon Technologies	TRAVEO-2 BODY HIGH-END Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 Core Size: 32-Bit Tri-Core Speed: 100MHz, 250MHz Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 72 Program Memory Size: 4.0625MB (4.0625M x 8) Program Memory Type: FLASH EEPROM Size: 256K x 8 RAM Size: 768K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 55x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Exposed Pad Supplier Device Package: 100-TEQFP (14x14)	封装: -	库存2,700
TC297TX128F300SBBKXUMA2	Infineon Technologies	IC MCU 32BIT 8MB FLASH 292LFBGA Core Processor: TriCore™ Core Size: 32-Bit Tri-Core Speed: 300MHz Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Number of I/O: 169 Program Memory Size: 8MB (8M x 8) Program Memory Type: FLASH EEPROM Size: 768K x 8 RAM Size: 728K x 8 Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Data Converters: A/D 94x12b SAR, Sigma-Delta Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 292-LFBGA Supplier Device Package: PG-LFBGA-292-6	封装: -	Request a Quote
IPB60R080P7ATMA1	Infineon Technologies	MOSFET N-CH 600V 37A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 129W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
FP150R12N3T7BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3-3 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Power - Max: 20 mW Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO3	封装: -	库存30
S29AL008J70BFA023	Infineon Technologies	IC FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
IRLML2502TR	Infineon Technologies	MOSFET N-CH 20V 4.2A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	封装: -	Request a Quote
SIGC81T60NCX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 95ns/200ns Test Condition: 300V, 100A, 2.2Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote
IPB70N10S3L12ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封装: -	Request a Quote
FS10R12YE3BOMA1	Infineon Technologies	MOD IGBT LOW PWR EASY2-1 IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote

IRGP4066DPBF

Infineon Technologies

IGBT 600V 140A 454W TO247AC

IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 140A
Current - Collector Pulsed (Icm): 225A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 454W
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: 50ns/200ns
Test Condition: 400V, 75A, 10 Ohm, 15V
Reverse Recovery Time (trr): 155ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC

封装: TO-247-3

库存30,600

IPB80N06S2L07ATMA1

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,232

SPU08P06P

Infineon Technologies

MOSFET P-CH 60V 8.83A TO-251

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存7,616

IPL65R420E6AUMA1

Infineon Technologies

MOSFET N-CH 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 420 mOhm @ 3.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Thin-Pak (8x8)
Package / Case: 4-PowerTSFN

封装: 4-PowerTSFN

库存2,320

IPT60R150G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 17A HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 902pF @ 400V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 150 mOhm @ 5.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封装: 8-PowerSFN

库存6,496

IRF7580MTRPBF

Infineon Technologies

MOSFET N-CH 60V 114A DIRECTFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DirectFET? Isometric ME
Package / Case: DirectFET? Isometric ME

封装: DirectFET? Isometric ME

库存3,232

IRFSL4310ZPBF

Infineon Technologies

MOSFET N-CH 100V 120A TO-262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存8,328

BSD340NH6327XTSA1

Infineon Technologies

SMALL SIGNAL+P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-TSSOP, SC-88, SOT-363

库存6,816

BB689H7903XTMA1

Infineon Technologies

DIODE TUNING 30V 20MA SCD80

Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio: 23.2
Capacitance Ratio Condition: C1/C28
Voltage - Peak Reverse (Max): 30V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-80
Supplier Device Package: PG-SCD80-2

封装: SC-80

库存7,840

IDW30E60FKSA1

Infineon Technologies

DIODE GEN PURP 600V 60A TO247-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A (DC)
Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143ns
Current - Reverse Leakage @ Vr: 40µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-247-3

库存5,856

BAV99E6327

Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT23

Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 150nA @ 70V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存717,360

IRS2336STRPBF

Infineon Technologies

IC GATE DRIVER HV 3PHASE 28-SOIC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 125ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

库存6,848

XE162FN24F80LAAFXUMA1

Infineon Technologies

IC MCU 16BIT 192KB FLASH 64LQFP

Core Processor: C166SV2
Core Size: 16-Bit
Speed: 80MHz
Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 192KB (192K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 26K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 9x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-64-6

封装: 64-LQFP Exposed Pad

库存2,256

XC2765X104F80LRABKXUMA1

Infineon Technologies

IC MCU 16BIT 832KB FLASH 100LQFP

Core Processor: C166SV2
Core Size: 16/32-Bit
Speed: 80MHz
Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Number of I/O: 75
Program Memory Size: 832KB (832K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 50K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: PG-LQFP-100-8

封装: 100-LQFP Exposed Pad

库存5,520

XMC4104F64F128BAXQMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64TQFP

Core Processor: ARM? Cortex?-M4
Core Size: 32-Bit
Speed: 80MHz
Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Number of I/O: 35
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 20K x 8
Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
Data Converters: A/D 10x12b; D/A 2x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-TQFP Exposed Pad
Supplier Device Package: PG-TQFP-64-19

封装: 64-TQFP Exposed Pad

库存2,576

SP370251060XTMA3

Infineon Technologies

BOARD MOUNT PRESSURE SENSOR

Sensor Type: Tire Pressure Monitoring (TPMS)
Output Type: RF
Operating Temperature: -40°C ~ 125°C (TA)

封装: -

库存3,402

TLE4955CE4AAMA1

Infineon Technologies

MAGNETIC SWITCH SPEC PURP SSO-2

Function: Special Purpose
Technology: Hall Effect
Polarization: North Pole, South Pole
Sensing Range: -30mT Trip, 30mT Release
Test Condition: 25°C
Voltage - Supply: 4 V ~ 20 V
Current - Supply (Max): 8mA
Current - Output (Max): 16mA
Output Type: PWM
Features: -
Operating Temperature: -40°C ~ 110°C
Package / Case: 2-SIP, SSO-2-53
Supplier Device Package: PG-SSO-2-53

封装: 2-SIP, SSO-2-53

库存7,956

C164CI8RMCAFXUMA1

Infineon Technologies

IC MCU 16BIT 80MQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: 80-MQFP

封装: -

库存7,232

FF600R12KE4BOSA1

Infineon Technologies

IGBT MODULE 1200V 600A

IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 600 A
Power - Max: -
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存42

IPD60R360CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 7A TO252-3-313

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 679 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存4,608

TD104N14KOFAHPSA2

Infineon Technologies

THYR / DIODE MODULE DK

Structure: Common Anode - All SCRs
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 1.4 kV
Current - On State (It (AV)) (Max): 102 A
Current - On State (It (RMS)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2050A @ 50Hz
Current - Hold (Ih) (Max): 200 mA
Operating Temperature: 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module

封装: -

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CYT4BB5CEBQ1AEEGS

Infineon Technologies

TRAVEO-2 BODY HIGH-END

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Core Size: 32-Bit Tri-Core
Speed: 100MHz, 250MHz
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 72
Program Memory Size: 4.0625MB (4.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 256K x 8
RAM Size: 768K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 55x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP Exposed Pad
Supplier Device Package: 100-TEQFP (14x14)

封装: -

库存2,700

TC297TX128F300SBBKXUMA2

Infineon Technologies

IC MCU 32BIT 8MB FLASH 292LFBGA

Core Processor: TriCore™
Core Size: 32-Bit Tri-Core
Speed: 300MHz
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Number of I/O: 169
Program Memory Size: 8MB (8M x 8)
Program Memory Type: FLASH
EEPROM Size: 768K x 8
RAM Size: 728K x 8
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Data Converters: A/D 94x12b SAR, Sigma-Delta
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Supplier Device Package: PG-LFBGA-292-6

封装: -

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IPB60R080P7ATMA1

Infineon Technologies

MOSFET N-CH 600V 37A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 129W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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FP150R12N3T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-3

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 20 mW
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 150A
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO3

封装: -

库存30

S29AL008J70BFA023

Infineon Technologies

IC FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

IRLML2502TR

Infineon Technologies

MOSFET N-CH 20V 4.2A SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro3™/SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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SIGC81T60NCX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 95ns/200ns
Test Condition: 300V, 100A, 2.2Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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IPB70N10S3L12ATMA2

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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FS10R12YE3BOMA1

Infineon Technologies

MOD IGBT LOW PWR EASY2-1

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote