页 536 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  536/567
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IRGS10B60KDTRRP
Infineon Technologies

IGBT 600V 22A 156W D2PAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 22A
  • Current - Collector Pulsed (Icm): 44A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A
  • Power - Max: 156W
  • Switching Energy: 140µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 30ns/230ns
  • Test Condition: 400V, 10A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 90ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,496
SGP02N120XKSA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO220-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: TO-220-3
库存7,824
IPP100N06S2L05AKSA1
Infineon Technologies

MOSFET N-CH 55V 100A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,280
hot IRF7451PBF
Infineon Technologies

MOSFET N-CH 150V 3.6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,968
BSP316PE6327
Infineon Technologies

MOSFET P-CH 100V 0.68A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存6,592
BC80740B5003XT
Infineon Technologies

TRANS PNP 45V 0.5A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 330mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存3,376
BAR 63-02W E6433
Infineon Technologies

DIODE RF SGL 50V 100MA SCD-80

  • Diode Type: PIN - Single
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
  • Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
封装: SC-80
库存3,568
SIDC04D60F6
Infineon Technologies

DIODE GEN PURP 600V 9A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: Die
库存2,560
IDH16S60CAKSA1
Infineon Technologies

DIODE SCHOTTKY 600V 16A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 16A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 200µA @ 600V
  • Capacitance @ Vr, F: 650pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存4,416
BAT 64-04T E6327
Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SC75

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io) (per Diode): 120mA
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 30V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封装: SC-75, SOT-416
库存6,128
TLS850D0TEV33ATMA1
Infineon Technologies

IC REG LINEAR 500MA TO252-5

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,984
hot IR3891MTRPBF
Infineon Technologies

IC REG BCK ADJ 4A DL SYNC 31PQFN

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 2
  • Voltage - Input (Min): 1V
  • Voltage - Input (Max): 21V
  • Voltage - Output (Min/Fixed): 0.5V
  • Voltage - Output (Max): 18.06V
  • Current - Output: 4A
  • Frequency - Switching: 300kHz ~ 1.5MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 31-PowerVFQFN
  • Supplier Device Package: PQFN (5x6)
封装: 31-PowerVFQFN
库存187,716
AUIR3320S
Infineon Technologies

IC SWITCH HI-SIDE 1CH D2-PAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 26 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 45A
  • Rds On (Typ): 3.3 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Adjustable), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab) Variant
  • Supplier Device Package: D2PAK
封装: TO-263-5, D2Pak (4 Leads + Tab) Variant
库存17,214
IR21571STR
Infineon Technologies

IC BALLAST CONTROL INTEG 16-SOIC

  • Type: Ballast Controller
  • Frequency: 45.5kHz ~ 50.5kHz
  • Voltage - Supply: 10.5 V ~ 16.5 V
  • Current - Supply: 5.5mA
  • Current - Output Source/Sink: -
  • Dimming: No
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
封装: 16-SOIC (0.154", 3.90mm Width)
库存3,472
IR44252LTRPBF
Infineon Technologies

IC GATE DRVR LOW SIDE SOT23-5L

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.6V, 2.7V
  • Current - Peak Output (Source, Sink): 300mA, 550mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 85ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SOT-23-5
封装: SC-74A, SOT-753
库存6,448
PBL38621/2SOT
Infineon Technologies

IC LINE INTERFACE SLIC PDSO-24

  • Function: Subscriber Line Interface Concept (SLIC)
  • Interface: -
  • Number of Circuits: 1
  • Voltage - Supply: 5V
  • Current - Supply: 2.8mA
  • Power (Watts): 290mW
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 24-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-24
封装: 24-SOIC (0.295", 7.50mm Width)
库存5,232
CHL8228G-03CRT
Infineon Technologies

IC REGULATOR PG-VQFN-56-901

  • Applications: Controller, GPU Core Power
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFQFN Exposed Pad
  • Supplier Device Package: 56-VQFN (8x8)
封装: 56-VFQFN Exposed Pad
库存2,576
IR3541MSG05TRP
Infineon Technologies

IC REGULATOR PG-VQFN-40-902

  • Applications: Controller, DDR, Intel VR12, AMD SVI
  • Voltage - Input: 3.3V
  • Number of Outputs: 2
  • Voltage - Output: -
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-VFQFN Exposed Pad
  • Supplier Device Package: 40-QFN (6x6)
封装: 40-VFQFN Exposed Pad
库存5,856
S6E2HE6G0AGV2B00M
Infineon Technologies

IC MCU 32BIT 544KB FLASH 120LQFP

  • Core Processor: ARM® Cortex®-M4F
  • Core Size: 32-Bit
  • Speed: 160MHz
  • Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 100
  • Program Memory Size: 544KB (544K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 64K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 24x12b; D/A 2x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 120-LQFP
  • Supplier Device Package: 120-LQFP (16x16)
封装: -
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IPP023NE7N3G
Infineon Technologies

MOSFET N-CH 75V 120A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 273µA
  • Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
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ICE1PCS02GXUMA1
Infineon Technologies

IC PFC CTLR CCM 8DSOP

  • Mode: -
  • Frequency - Switching: -
  • Current - Startup: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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CYUSB3304-BVXA
Infineon Technologies

USB SUPER SPEED HUBS

  • Applications: USB 3.0 Hub Controller
  • Core Processor: ARM® Cortex®-M0
  • Program Memory Type: ROM (32kB)
  • Controller Series: CYUSB
  • RAM Size: 16K x 8
  • Interface: I2C
  • Number of I/O: 10
  • Voltage - Supply: 1.14V ~ 1.26V, 2.5V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-VFBGA
  • Supplier Device Package: 100-VFBGA (6x6)
封装: -
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S25HL01GTFABHM033
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (8x8)
封装: -
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CYT2B75CADQ0AZSGS
Infineon Technologies

IC MCU 32BT 1.0625MB FLSH 100QFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 78
  • Program Memory Size: 1.0625MB (1.0625M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 96K x 8
  • RAM Size: 128K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 57x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x14)
封装: -
库存2,700
BSZ130N03MSGATMA1
Infineon Technologies

MOSFET N-CH 30V 9A/35A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存48,855
IRF8113TRPBF-1
Infineon Technologies

MOSFET N-CH 30V 17.2A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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FS300R17OE4B81BPSA1
Infineon Technologies

MEDIUM POWER ECONO

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1700 V
  • Current - Collector (Ic) (Max): 300 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONOPP
封装: -
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PEF3452HV1-3
Infineon Technologies

PEF3452 - LINE INTERFACE UNIT FO

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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CY8C4147AZSS595XQLA1
Infineon Technologies

PSOC4 - GENERAL

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit
  • Speed: 48MHz
  • Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
  • Number of I/O: 54
  • Program Memory Size: 128KB (128K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: -
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PS3GHFANSET30603NOSA1
Infineon Technologies

MOD IGBT STACK PSAO-1

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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