页 538 - Infineon Technologies 产品 | 深圳黑森尔电子
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Infineon Technologies 产品

记录 16,988
页  538/567
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hot IRFH4226TRPBF
Infineon Technologies

MOSFET N-CH 25V 70A PQFN 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.4W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存6,080
IRF540ZSTRRPBF
Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,824
hot IRLR7843TR
Infineon Technologies

MOSFET N-CH 30V 161A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存30,000
IRL2203NL
Infineon Technologies

MOSFET N-CH 30V 116A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存5,616
hot IRLU9343PBF
Infineon Technologies

MOSFET P-CH 55V 20A I-PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 50V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存184,692
IPA65R1K5CEXKSA1
Infineon Technologies

MOSFET N-CH 650V TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存3,920
IPW80R360P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存7,344
SPD50N03S2L06T
Infineon Technologies

MOSFET N-CH 30V 50A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 85µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,176
IPS65R1K4C6AKMA1
Infineon Technologies

MOSFET N-CH 650V 3.2A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
封装: TO-251-3 Stub Leads, IPak
库存14,556
IPP60R199CPXKSA1
Infineon Technologies

MOSFET N-CH 650V 16A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 660µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存8,196
BBY 56-02W E6127
Infineon Technologies

DIODE TUNING 10V 20MA SCD-80

  • Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
  • Capacitance Ratio: 3.3
  • Capacitance Ratio Condition: C1/C3
  • Voltage - Peak Reverse (Max): 10V
  • Diode Type: Single
  • Q @ Vr, F: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
封装: SC-80
库存6,368
BAR6304WE6327HTSA1
Infineon Technologies

DIODE PIN 50V 0.1A 0.25W SOT-323

  • Diode Type: PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max): 50V
  • Current - Max: 100mA
  • Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
  • Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
  • Power Dissipation (Max): 250mW
  • Operating Temperature: 150°C (TJ)
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存5,904
hot AUIPS1041L
Infineon Technologies

IC SW IPS 1CH LOW SIDE SOT223

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.5A
  • Rds On (Typ): 80 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存68,880
IR3310STRL
Infineon Technologies

IC SWITCH HI-SIDE 1CH D2-PAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 23A
  • Rds On (Typ): 5.5 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Adjustable), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: D2Pak (SMD-220 5-Lead)
封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
库存6,288
IPS031S
Infineon Technologies

IC MOSFET PWR SW SGL 12A D2-PAK

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 35V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 2.8A
  • Rds On (Typ): 45 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,280
BTS7710GT
Infineon Technologies

IC SW TRILITHIC 110MOHM PDSO28

  • Output Configuration: Half Bridge (2)
  • Applications: DC Motors, General Purpose
  • Interface: Logic
  • Load Type: Inductive
  • Technology: DMOS
  • Rds On (Typ): 40 mOhm LS, 70 mOhm HS
  • Current - Output / Channel: -
  • Current - Peak Output: 15A
  • Voltage - Supply: 1.8 V ~ 42 V
  • Voltage - Load: 1.8 V ~ 42 V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Features: Status Flag
  • Fault Protection: ESD, Over Temperature, Short Circuit, UVLO
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: P-DSO-28
封装: 28-SOIC (0.295", 7.50mm Width)
库存3,696
SAK-XC2265N-40F80L
Infineon Technologies

IC MCU 16BIT 320KB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 76
  • Program Memory Size: 320KB (320K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 42K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
封装: 100-LQFP Exposed Pad
库存3,504
XC8888FFI5VACFXUMA1
Infineon Technologies

IC MCU 8BIT 32KB FLASH 64TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 48
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: 64-LQFP
库存3,152
BTS441RGATMA1
Infineon Technologies

IC HIGH SIDE PWR SWITCH D2PAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.75 V ~ 43 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 17A
  • Rds On (Typ): 15 mOhm
  • Input Type: Non-Inverting
  • Features: Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: PG-TO263-5-2
封装: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
库存109,626
PX7299EDQG005XUMA1
Infineon Technologies

IC REGULATOR 16VQFN

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,728
PEF22553HTV2-1
Infineon Technologies

LANTIQ PEF22553 TELECOMS IC

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
IPF012N06NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 282A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 186µA
  • Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-U02
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
封装: -
库存2,385
D2200N24TVFXPSA1
Infineon Technologies

DIODE GEN PURP 2.4KV 2200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
SIDC38D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 150A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
FP15R12KT3BOSA1
Infineon Technologies

IGBT MOD 1200V 18A 83.5W

  • IGBT Type: -
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 18 A
  • Power - Max: 83.5 W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 10A
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
S6BP401AL2SN1B00A
Infineon Technologies

IC ANALOG MCD AUTO 40QFN

  • Topology: -
  • Function: -
  • Number of Outputs: -
  • Frequency - Switching: -
  • Voltage/Current - Output 1: -
  • Voltage/Current - Output 2: -
  • Voltage/Current - Output 3: -
  • w/LED Driver: -
  • w/Supervisor: -
  • w/Sequencer: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
IFX25001TCV85ATMA1
Infineon Technologies

IC REG LINEAR VOLTAGE REG

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 8.5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 400mA
  • Current - Quiescent (Iq): 220 µA
  • Current - Supply (Max): 30 mA
  • PSRR: 60dB (100Hz)
  • Control Features: -
  • Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
  • Supplier Device Package: PG-TO263-3-1
封装: -
Request a Quote
BCR185WE6327
Infineon Technologies

TRANS PREBIAS PNP 50V SOT323-3

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 10 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200 MHz
  • Power - Max: 250 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3-1
封装: -
Request a Quote
S25HL02GTDPBHV153
Infineon Technologies

SEMPER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
封装: -
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PEB4264-0TV1-1GD
Infineon Technologies

DUSLIC DUAL CHANNEL SLIC

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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