图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 4.5V @ 1mA | 55 nC @ 10 V | 1800 pF @ 300 V | ±30V | - | 165W (Tc) | 175mOhm @ 10A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 100MA SSM
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封装: - |
库存9,285 |
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MOSFET (Metal Oxide) | 30 V | 100mA (Ta) | 2.5V, 4V | 1.7V @ 100µA | - | 9.1 pF @ 3 V | ±20V | - | 100mW (Ta) | 12Ohm @ 10mA, 4V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
600V DTMOS VI TOLL 55MOHM
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封装: - |
库存10,701 |
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MOSFET (Metal Oxide) | 600 V | 40A (Ta) | 10V | 4V @ 1.69mA | 65 nC @ 10 V | 3680 pF @ 300 V | ±30V | - | 270W (Tc) | 55mOhm @ 15A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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封装: - |
库存5,850 |
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MOSFET (Metal Oxide) | 500 V | 11.5A (Ta) | 10V | 3.7V @ 600µA | 25 nC @ 10 V | 890 pF @ 300 V | ±30V | - | 100W (Tc) | 340mOhm @ 5.8A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR N-C
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封装: - |
库存9,840 |
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MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 2.5V @ 500µA | 52 nC @ 10 V | 4300 pF @ 50 V | ±20V | - | 960mW (Ta), 132W (Tc) | 5.6mOhm @ 30A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
G3 650V SIC-MOSFET TO-247-4L 48
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封装: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 650 V | 40A (Tc) | 18V | 5V @ 1.6mA | 41 nC @ 18 V | 1362 pF @ 400 V | +25V, -10V | - | 132W (Tc) | 69mOhm @ 20A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 4A SOT23F
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封装: - |
库存69,066 |
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MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4V, 10V | 2.2V @ 250µA | 6.2 nC @ 4.5 V | 492 pF @ 10 V | +20V, -25V | - | 1W (Ta) | 45mOhm @ 4A, 10V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
N-CH MOSFET 30V, +/-20V, 15A ,0.
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封装: - |
库存17,220 |
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MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | 1130 pF @ 15 V | ±20V | - | 1.5W (Ta) | 12mOhm @ 4A, 4.5V | 150°C | Surface Mount | 6-TSOP-F | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
40V; UMOS9; 0.66MOHM; S-TOGL
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封装: - |
库存8,571 |
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MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 6V, 10V | 3V @ 1mA | 128 nC @ 10 V | 11380 pF @ 10 V | ±20V | - | 375W (Tc) | 0.66mOhm @ 100A, 10V | 175°C | Surface Mount | S-TOGL™ | 5-PowerSFN |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
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封装: - |
库存46,617 |
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MOSFET (Metal Oxide) | 60 V | 136A (Tc) | 6.5V, 10V | 4V @ 1mA | 72 nC @ 10 V | 6100 pF @ 30 V | ±20V | - | 800mW (Ta), 170W (Tc) | 2.3mOhm @ 50A, 10V | 150°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A S-MINI
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封装: - |
库存68,580 |
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MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | +6V, -8V | - | 600mW (Ta) | 150mOhm @ 1A, 4.5V | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A UFM
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封装: - |
库存15,090 |
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MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | 840 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 29.8mOhm @ 3A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
|
封装: - |
库存5,952 |
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MOSFET (Metal Oxide) | 650 V | 7.8A (Ta) | 10V | 3.5V @ 300µA | 16 nC @ 10 V | 570 pF @ 300 V | ±30V | - | 80W (Tc) | 670mOhm @ 3.9A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
UMOS10 DPAK 80V 5.1MOHM
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封装: - |
库存46,704 |
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MOSFET (Metal Oxide) | 80 V | 84A (Tc) | 6V, 10V | 3.5V @ 700µA | 56 nC @ 10 V | 3980 pF @ 40 V | ±20V | - | 104W (Tc) | 5.1mOhm @ 42A, 10V | 175°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
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封装: - |
库存141 |
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MOSFET (Metal Oxide) | 900 V | 4.5A (Ta) | 10V | 4V @ 450µA | 20 nC @ 10 V | 950 pF @ 25 V | ±30V | - | 40W (Tc) | 3.1Ohm @ 2.3A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR DPA
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封装: - |
库存6,744 |
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MOSFET (Metal Oxide) | 250 V | 13A (Ta) | 10V | 3.5V @ 1mA | 25 nC @ 10 V | 1100 pF @ 100 V | ±20V | - | 96W (Tc) | 250mOhm @ 6.5A, 10V | 150°C | Surface Mount | DPAK | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 15A DPAK
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封装: - |
库存5,955 |
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MOSFET (Metal Oxide) | 40 V | 15A (Ta) | 4.5V, 10V | 2.5V @ 100µA | 10 nC @ 10 V | 610 pF @ 10 V | ±20V | - | 46W (Tc) | 17.8mOhm @ 7.5A, 10V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 34A 8SOP
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封装: - |
库存23,427 |
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MOSFET (Metal Oxide) | 60 V | 34A (Tc) | 4.5V, 10V | 2.5V @ 200µA | 21 nC @ 10 V | 1910 pF @ 30 V | ±20V | - | 830mW (Ta), 81W (Tc) | 9.5mOhm @ 17A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
|
封装: - |
库存150 |
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MOSFET (Metal Oxide) | 800 V | 6.5A (Ta) | 10V | 4V @ 280µA | 13 nC @ 10 V | 700 pF @ 300 V | ±20V | - | 35W (Tc) | 950mOhm @ 3.3A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 5A TO3P
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封装: - |
库存57 |
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MOSFET (Metal Oxide) | 900 V | 5A (Ta) | - | 4V @ 1mA | 28 nC @ 10 V | 1150 pF @ 25 V | - | - | 150W (Tc) | 2.5Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
G3 1200V SIC-MOSFET TO-247-4L 4
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封装: - |
库存300 |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 40A (Tc) | 18V | 5V @ 6.7mA | 57 nC @ 18 V | 1969 pF @ 800 V | +25V, -10V | - | 182W (Tc) | 62mOhm @ 20A, 18V | 175°C | Through Hole | TO-247-4L(X) | TO-247-4 |
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Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO-
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 250 V | 7.5A (Ta) | 10V | 3.5V @ 1mA | 16 nC @ 10 V | 550 pF @ 100 V | ±20V | - | 30W (Tc) | 500mOhm @ 3.8A, 10V | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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封装: - |
库存813 |
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MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 2.5V @ 300µA | 33 nC @ 10 V | 2040 pF @ 50 V | ±20V | - | 87W (Tc) | 10.7mOhm @ 21A, 10V | 175°C | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
AECQ MOSFET NCH 60V 6A SOT23F
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封装: - |
库存93,201 |
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MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4V, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | 550 pF @ 10 V | ±20V | - | 1.2W (Ta) | 36mOhm @ 5A, 10V | 175°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
AECQ MOSFET PCH 20V 3.9A SOT23
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封装: - |
库存16,590 |
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MOSFET (Metal Oxide) | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 1W (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
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封装: - |
库存132 |
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MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 161 nC @ 10 V | 9500 pF @ 50 V | ±20V | - | 54W (Tc) | 3.2mOhm @ 50A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A UF6
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封装: - |
库存4,911 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4V | 1V @ 1mA | 5.9 nC @ 4 V | 400 pF @ 10 V | ±10V | - | 500mW (Ta) | 55mOhm @ 2A, 4V | 150°C | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 38A 8TSON
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封装: - |
库存8,424 |
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MOSFET (Metal Oxide) | 40 V | 38A (Tc) | 4.5V, 10V | 2.4V @ 200µA | 24 nC @ 10 V | 2040 pF @ 20 V | ±20V | - | 610mW (Ta), 61W (Tc) | 7.5mOhm @ 19A, 10V | 175°C | Surface Mount | 8-TSON Advance (3.1x3.1) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
650V DTMOS6 HSD 42MOHM TO-247
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封装: - |
库存630 |
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MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | 6280 pF @ 300 V | ±30V | - | 360W (Tc) | 42mOhm @ 27.5A, 10V | 150°C | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 1.9A UFV
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封装: - |
库存10,518 |
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MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 1.8V, 4V | 1V @ 1mA | 1.9 nC @ 4 V | 123 pF @ 15 V | ±12V | Schottky Diode (Isolated) | 500mW (Ta) | 133mOhm @ 1A, 4V | 150°C | Surface Mount | UFV | 6-SMD (5 Leads), Flat Lead |