页 120 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NTHD4102PT3G	ON Semiconductor	MOSFET 2P-CH 20V 2.9A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存4,752	Logic Level Gate	20V	2.9A	80 mOhm @ 2.9A, 4.5V	1.5V @ 250µA	8.6nC @ 4.5V	750pF @ 16V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
SI4933DY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 7.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.4A Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存207,600	Logic Level Gate	12V	7.4A	14 mOhm @ 9.8A, 4.5V	1V @ 500µA	70nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZVN4206NTA	Diodes Incorporated	MOSFET 2N-CH 60V SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	封装: SOT-223-8	库存3,552	Standard	60V	-	-	-	-	-	-	-	Surface Mount	SOT-223-8	SOT-223
IRFHM8363TRPBF	Infineon Technologies	MOSFET 2N-CH 30V 11A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V Power - Max: 2.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-PQFN (3.3x3.3), Power33	封装: 8-PowerVDFN	库存193,056	Logic Level Gate	30V	11A	14.9 mOhm @ 10A, 10V	2.35V @ 25µA	15nC @ 10V	1165pF @ 10V	2.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-PQFN (3.3x3.3), Power33
APTMC60TLM55CT3AG	Microsemi Corporation	MOSFET 4N-CH 1200V 55A SP3F FET Type: 4 N-Channel (Three Level Inverter) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存7,584	Standard	1200V (1.2kV)	55A	49 mOhm @ 40A, 20V	2.2V @ 2mA (Typ)	98nC @ 20V	1900pF @ 1000V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
AO4614A	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存265,248	Logic Level Gate	40V	6A, 5A	31 mOhm @ 6A, 10V	3V @ 250µA	8.3nC @ 10V	404pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MCH6662-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 2A MCPH6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Power - Max: 800mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-MCPH	封装: 6-SMD, Flat Leads	库存72,000	Logic Level Gate	20V	2A	160 mOhm @ 1A, 4.5V	-	1.8nC @ 4.5V	128pF @ 10V	800mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	6-MCPH
BUK9K45-100E,115	Nexperia USA Inc.	MOSFET 2N-CH 100V 21A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存6,240	Logic Level Gate	100V	21A	42 mOhm @ 5A, 10V	2.1V @ 1mA	33.5nC @ 10V	2152pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMC1029UFDB-7	Diodes Incorporated	MOSFET N/P-CH 12V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存5,760	Standard	12V	5.6A, 3.8A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
MTM684110LBF	Panasonic Electronic Components	MOSFET 2P-CH 12V 4.8A WMINI8-F1 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: WMini8-F1	封装: 8-SMD, Flat Lead	库存2,096	Standard	12V	4.8A	32 mOhm @ 1A, 5V	1V @ 1mA	-	1400pF @ 10V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	WMini8-F1
UT6JA2TCR	Rohm Semiconductor	-30V PCH+PCH MIDDLE POWER MOSFET FET Type: 2 P-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	封装: 6-UDFN Exposed Pad	库存2,000	-	30V	4A	70 mOhm @ 4A, 10V	2.5V @ 1mA	6.7nC @ 10V	305pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
IPG20N06S2L35AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 27µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: 8-PowerVDFN	库存39,828	Logic Level Gate	55V	2A (Tc)	35 mOhm @ 15A, 10V	2V @ 27µA	23nC @ 10V	790pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
DMN61D8LVTQ-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.63A TSOT26 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: SOT-23-6 Thin, TSOT-23-6	库存3,904	Logic Level Gate	60V	630mA	1.8 Ohm @ 150mA, 5V	2V @ 1mA	0.74nC @ 5V	12.9pF @ 12V	820mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
IRF7341PBF	Infineon Technologies	MOSFET 2N-CH 55V 4.7A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,668	Logic Level Gate	55V	4.7A	50 mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMHC6A07N8TC	Diodes Incorporated	MOSFET 2N/2P-CH 60V 8-SOIC FET Type: 2 N and 2 P-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V Power - Max: 870mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存63,600	Logic Level Gate	60V	1.39A, 1.28A	250 mOhm @ 1.8A, 10V	3V @ 250µA	3.2nC @ 10V	166pF @ 40V	870mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMA1023PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 3.7A MICROFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封装: 6-VDFN Exposed Pad	库存2,017,512	Logic Level Gate	20V	3.7A	72 mOhm @ 3.7A, 4.5V	1.5V @ 250µA	12nC @ 4.5V	655pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
MCH6615-TL-E	onsemi	PCH+NCH 2.5V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IRFR420U	Harris Corporation	MOSFET N-CH 500V 2.5A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SH32N65DM6AG	STMicroelectronics	MOSFET 2N-CH 650V 32A 9ACEPACK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V Power - Max: 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-ACEPACK SMIT	封装: -	库存702	-	650V	32A (Tc)	97mOhm @ 23A, 10V	4.75V @ 250µA	47nC @ 10V	2211pF @ 100V	208W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	9-PowerSMD	9-ACEPACK SMIT
AONY36306	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 17.5A/32A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-DFN (5x6)	封装: -	Request a Quote	-	30V	17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)	6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V	2.2V @ 250µA, 1.9V @ 250µA	30nC @ 10V, 42nC @ 10V	1000pF @ 15V, 1930pF @ 15V	2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-DFN (5x6)
SI4534DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 60V 6.2A/8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V Power - Max: 2W (Ta), 3.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存30,075	-	60V	6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)	29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V	3V @ 250µA	11nC @ 10V, 22nC @ 10V	420pF @ 30V, 650pF @ 30V	2W (Ta), 3.6W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SSM6N813R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 100V 3.5A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	封装: -	库存24,597	-	100V	3.5A (Ta)	112mOhm @ 3.5A, 10V	2.5V @ 100µA	3.6nC @ 4.5V	242pF @ 15V	1.5W (Ta)	175°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
G300C03L6	Goford Semiconductor	MOSFET N+P-CH 30V 5.6A/4.2A SOT- FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.6A, 4.2A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10 V, 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 15 V, 693pF @ -15 V Power - Max: 1.4W (Ta), 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6L Dual	封装: -	库存8,604	-	30V	5.6A, 4.2A (Tc)	27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V	1.3V @ 250µA	16nC @ 10 V, 8.5 nC @ 4.5 V	547pF @ 15 V, 693pF @ -15 V	1.4W (Ta), 500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6L Dual
SQJB40EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8	封装: -	库存27,000	-	40V	30A (Tc)	8mOhm @ 8A, 10V	2.5V @ 250µA	35nC @ 10V	1900pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
MSCSM120AM50CT1AG	Microchip Technology	SIC 2N-CH 1200V 55A SP1F FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Power - Max: 245W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP1F	封装: -	Request a Quote	-	1200V (1.2kV)	55A (Tc)	50mOhm @ 40A, 20V	2.7V @ 1mA	137nC @ 20V	1990pF @ 1000V	245W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
CAB016M12FM3T	Wolfspeed, Inc.	SIC 2N-CH 1200V 78A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 78A (Tj) Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存6	-	1200V (1.2kV)	78A (Tj)	21.3mOhm @ 80A, 15V	3.6V @ 23mA	236nC @ 15V	6600pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
RF1S30N06LE	Harris Corporation	MOSFET N-CH 60V 30A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MSCSM120DDUM16TBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 6mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM120AM13CT6AG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
XP3700YT	YAGEO XSEMI	MOSFET N AND P-CH 30V 8.7A 6.1A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V Power - Max: 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerDFN Supplier Device Package: PMPAK® 3 x 3	封装: -	库存2,985	-	30V	8.7A (Ta), 6.1A (Tc)	20mOhm @ 8A, 10V	2.5V @ 1mA	8nC @ 4.5V	880pF @ 15V	2.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerDFN	PMPAK® 3 x 3

NTHD4102PT3G

ON Semiconductor

MOSFET 2P-CH 20V 2.9A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存4,752

Logic Level Gate

20V

2.9A

80 mOhm @ 2.9A, 4.5V

1.5V @ 250µA

8.6nC @ 4.5V

750pF @ 16V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

SI4933DY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 7.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存207,600

Logic Level Gate

12V

7.4A

14 mOhm @ 9.8A, 4.5V

1V @ 500µA

70nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZVN4206NTA

Diodes Incorporated

MOSFET 2N-CH 60V SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

封装: SOT-223-8

库存3,552

Standard

60V

-

Surface Mount

SOT-223-8

SOT-223

IRFHM8363TRPBF

Infineon Technologies

MOSFET 2N-CH 30V 11A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 10V
Power - Max: 2.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PQFN (3.3x3.3), Power33

封装: 8-PowerVDFN

库存193,056

Logic Level Gate

30V

11A

14.9 mOhm @ 10A, 10V

2.35V @ 25µA

15nC @ 10V

1165pF @ 10V

2.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-PQFN (3.3x3.3), Power33

APTMC60TLM55CT3AG

Microsemi Corporation

MOSFET 4N-CH 1200V 55A SP3F

FET Type: 4 N-Channel (Three Level Inverter)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存7,584

Standard

1200V (1.2kV)

55A

49 mOhm @ 40A, 20V

2.2V @ 2mA (Typ)

98nC @ 20V

1900pF @ 1000V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

AO4614A

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存265,248

Logic Level Gate

40V

6A, 5A

31 mOhm @ 6A, 10V

3V @ 250µA

8.3nC @ 10V

404pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MCH6662-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 2A MCPH6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 160 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Power - Max: 800mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-MCPH

封装: 6-SMD, Flat Leads

库存72,000

Logic Level Gate

20V

2A

160 mOhm @ 1A, 4.5V

-

1.8nC @ 4.5V

128pF @ 10V

800mW

150°C (TJ)

Surface Mount

6-SMD, Flat Leads

6-MCPH

BUK9K45-100E,115

Nexperia USA Inc.

MOSFET 2N-CH 100V 21A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存6,240

Logic Level Gate

100V

21A

42 mOhm @ 5A, 10V

2.1V @ 1mA

33.5nC @ 10V

2152pF @ 25V

53W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMC1029UFDB-7

Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存5,760

Standard

12V

5.6A, 3.8A

29 mOhm @ 5A, 4.5V

1V @ 250µA

19.6nC @ 8V

914pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

MTM684110LBF

Panasonic Electronic Components

MOSFET 2P-CH 12V 4.8A WMINI8-F1

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: WMini8-F1

封装: 8-SMD, Flat Lead

库存2,096

Standard

12V

4.8A

32 mOhm @ 1A, 5V

1V @ 1mA

-

1400pF @ 10V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

WMini8-F1

UT6JA2TCR

Rohm Semiconductor

-30V PCH+PCH MIDDLE POWER MOSFET

FET Type: 2 P-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: HUML2020L8

封装: 6-UDFN Exposed Pad

库存2,000

-

30V

4A

70 mOhm @ 4A, 10V

2.5V @ 1mA

6.7nC @ 10V

305pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

HUML2020L8

IPG20N06S2L35AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 27µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: 8-PowerVDFN

库存39,828

Logic Level Gate

55V

2A (Tc)

35 mOhm @ 15A, 10V

2V @ 27µA

23nC @ 10V

790pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

DMN61D8LVTQ-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.63A TSOT26

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V
Power - Max: 820mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: SOT-23-6 Thin, TSOT-23-6

库存3,904

Logic Level Gate

60V

630mA

1.8 Ohm @ 150mA, 5V

2V @ 1mA

0.74nC @ 5V

12.9pF @ 12V

820mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

IRF7341PBF

Infineon Technologies

MOSFET 2N-CH 55V 4.7A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,668

Logic Level Gate

55V

4.7A

50 mOhm @ 4.7A, 10V

1V @ 250µA

36nC @ 10V

740pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMHC6A07N8TC

Diodes Incorporated

MOSFET 2N/2P-CH 60V 8-SOIC

FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.39A, 1.28A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
Power - Max: 870mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存63,600

Logic Level Gate

60V

1.39A, 1.28A

250 mOhm @ 1.8A, 10V

3V @ 250µA

3.2nC @ 10V

166pF @ 40V

870mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMA1023PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.7A MICROFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封装: 6-VDFN Exposed Pad

库存2,017,512

Logic Level Gate

20V

3.7A

72 mOhm @ 3.7A, 4.5V

1.5V @ 250µA

12nC @ 4.5V

655pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

MCH6615-TL-E

onsemi

PCH+NCH 2.5V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

IRFR420U

Harris Corporation

MOSFET N-CH 500V 2.5A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SH32N65DM6AG

STMicroelectronics

MOSFET 2N-CH 650V 32A 9ACEPACK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 97mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 100V
Power - Max: 208W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-ACEPACK SMIT

封装: -

库存702

-

650V

32A (Tc)

97mOhm @ 23A, 10V

4.75V @ 250µA

47nC @ 10V

2211pF @ 100V

208W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

9-PowerSMD

9-ACEPACK SMIT

AONY36306

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17.5A/32A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 1930pF @ 15V
Power - Max: 2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)

封装: -

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-

30V

17.5A (Ta), 32A (Tc), 24A (Ta), 32A (Tc)

6mOhm @ 20A, 10V, 3.8mOhm @ 20A, 10V

2.2V @ 250µA, 1.9V @ 250µA

30nC @ 10V, 42nC @ 10V

1000pF @ 15V, 1930pF @ 15V

2.9W (Ta), 22W (Tc), 3.4W (Ta), 33W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

8-DFN (5x6)

SI4534DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V 6.2A/8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V, 650pF @ 30V
Power - Max: 2W (Ta), 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存30,075

-

60V

6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)

29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V

3V @ 250µA

11nC @ 10V, 22nC @ 10V

420pF @ 30V, 650pF @ 30V

2W (Ta), 3.6W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SSM6N813R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

封装: -

库存24,597

-

100V

3.5A (Ta)

112mOhm @ 3.5A, 10V

2.5V @ 100µA

3.6nC @ 4.5V

242pF @ 15V

1.5W (Ta)

175°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

G300C03L6

Goford Semiconductor

MOSFET N+P-CH 30V 5.6A/4.2A SOT-

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10 V, 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 547pF @ 15 V, 693pF @ -15 V
Power - Max: 1.4W (Ta), 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6L Dual

封装: -

库存8,604

-

30V

5.6A, 4.2A (Tc)

27mOhm @ 3A, 10V, 55mOhm @ 3A, 10V

1.3V @ 250µA

16nC @ 10 V, 8.5 nC @ 4.5 V

547pF @ 15 V, 693pF @ -15 V

1.4W (Ta), 500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6L Dual

SQJB40EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8

封装: -

库存27,000

-

40V

30A (Tc)

8mOhm @ 8A, 10V

2.5V @ 250µA

35nC @ 10V

1900pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

MSCSM120AM50CT1AG

Microchip Technology

SIC 2N-CH 1200V 55A SP1F

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Power - Max: 245W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1F

封装: -

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-

1200V (1.2kV)

55A (Tc)

50mOhm @ 40A, 20V

2.7V @ 1mA

137nC @ 20V

1990pF @ 1000V

245W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP1F

CAB016M12FM3T

Wolfspeed, Inc.

SIC 2N-CH 1200V 78A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 21.3mOhm @ 80A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs: 236nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存6

-

1200V (1.2kV)

78A (Tj)

21.3mOhm @ 80A, 15V

3.6V @ 23mA

236nC @ 15V

6600pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

RF1S30N06LE

Harris Corporation

MOSFET N-CH 60V 30A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MSCSM120DDUM16TBL3NG

Microchip Technology

SIC 4N-CH 1200V 150A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 560W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

150A

16mOhm @ 80A, 20V

2.8V @ 6mA

464nC @ 20V

6040pF @ 1000V

560W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM120AM13CT6AG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

XP3700YT

YAGEO XSEMI

MOSFET N AND P-CH 30V 8.7A 6.1A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 15V
Power - Max: 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerDFN
Supplier Device Package: PMPAK® 3 x 3

封装: -

库存2,985

-

30V

8.7A (Ta), 6.1A (Tc)

20mOhm @ 8A, 10V

2.5V @ 1mA

8nC @ 4.5V

880pF @ 15V

2.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerDFN

PMPAK® 3 x 3