页 119 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO4828L	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 60V 4.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存10,716	Logic Level Gate	60V	-	56 mOhm @ 4.5A, 10V	3V @ 250µA	10.5nC @ 10V	540pF @ 30V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VQ1006P	Vishay Siliconix	MOSFET 4N-CH 90V 0.4A 14DIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: - Supplier Device Package: 14-DIP	封装: -	库存6,168	Logic Level Gate	90V	400mA	4.5 Ohm @ 1A, 10V	2.5V @ 1mA	-	60pF @ 25V	2W	-55°C ~ 150°C (TJ)	Through Hole	-	14-DIP
BSS84DW-7	Diodes Incorporated	MOSFET 2P-CH 50V 0.13A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存5,904	Logic Level Gate	50V	130mA	10 Ohm @ 100mA, 5V	2V @ 1mA	-	45pF @ 25V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ALD110808SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V Vgs(th) (Max) @ Id: 820mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存6,704	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.8V	820mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
DMPH6050SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,576	Standard	-	5.2A (Ta)	48 mOhm @ 5A, 10V	3V @ 250µA	14.5nC @ 4.5V	1525pF @ 30V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
VEC2415-TL-W	ON Semiconductor	MOSFET 2N-CH 60V 3A VEC8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封装: 8-SMD, Flat Lead	库存4,336	Logic Level Gate, 4V Drive	60V	3A	80 mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	1W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
CPH6636R-TL-W	ON Semiconductor	MOSFET 2N-CH 24V 6A CPH6 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 900mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封装: SOT-23-6 Thin, TSOT-23-6	库存5,904	Logic Level Gate, 2.5V Drive	24V	6A	20 mOhm @ 3A, 4.5V	-	3nC @ 4.5V	-	900mW	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
FDS6912A	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存548,340	Logic Level Gate	30V	6A	28 mOhm @ 6A, 10V	3V @ 250µA	8.1nC @ 5V	575pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BUK7K18-40EX	Nexperia USA Inc.	MOSFET 2N-CH 40V 24.2A LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24.2A Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存12,744	Standard	40V	24.2A	19 mOhm @ 10A, 10V	4V @ 1mA	11.8nC @ 10V	808pF @ 25V	38W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
PHP225,118	Nexperia USA Inc.	MOSFET 2P-CH 30V 2.3A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存50,442	Logic Level Gate	30V	2.3A	250 mOhm @ 1A, 10V	2.8V @ 1mA	25nC @ 10V	250pF @ 20V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1965DH-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存147,012	Logic Level Gate	12V	1.3A	390 mOhm @ 1A, 4.5V	1V @ 250µA	4.2nC @ 8V	120pF @ 6V	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
SI4922BDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存518,976	Standard	30V	8A	16 mOhm @ 5A, 10V	1.8V @ 250µA	62nC @ 10V	2070pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4599DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 40V 6.8A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Power - Max: 3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存498,456	Logic Level Gate	40V	6.8A, 5.8A	35.5 mOhm @ 5A, 10V	3V @ 250µA	20nC @ 10V	640pF @ 20V	3W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3732UVT-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	1.1A (Ta)	460mOhm @ 200mA, 4.5V	0.95V @ 250µA	0.9nC @ 10V	40.8pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
IRFNL210BTA	Fairchild Semiconductor	MOSFET N-CH 200V FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GSFB0205	Good-Ark Semiconductor	MOSFET 2P-CH 20V 4A 6PPAK FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-PPAK (2x2)	封装: -	库存18,000	-	20V	4A (Ta)	49mOhm @ 1.5A, 4.5V	1V @ 250µA	9nC @ 4.5V	810pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-PPAK (2x2)
SQJB04ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存70,419	-	40V	30A (Tc)	11mOhm @ 5A, 10V	2.2V @ 250µA	20nC @ 10V	1055pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
DMC67D8UFDBQ-13	Diodes Incorporated	MOSFET N/P-CH 60V 0.39A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V, 20V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V Power - Max: 580mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	60V, 20V	390mA (Ta), 2.9A (Ta)	4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V	2.5V @ 250µA, 1.25V @ 250µA	0.4pC @ 4.5V, 7.3nC @ 4.5V	41pF @ 25V, 443pF @ 16V	580mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
MSCSM120DDUM31CTBL2NG	Microchip Technology	SIC 4N-CH 1200V 79A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Power - Max: 310W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	79A	31mOhm @ 40A, 20V	2.8V @ 1mA	232nC @ 20V	3020pF @ 1000V	310W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
VEC2415-TL-W-Z	onsemi	MOSFET 2N-CH 60V 3A SOT28 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V Power - Max: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: SOT-28FL/VEC8	封装: -	Request a Quote	-	60V	3A (Ta)	80mOhm @ 1.5A, 10V	2.6V @ 1mA	10nC @ 10V	505pF @ 20V	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	SOT-28FL/VEC8
DMN3061SVTQ-7	Diodes Incorporated	MOSFET 2N-CH 30V 3.4A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Power - Max: 880mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	库存8,358	-	30V	3.4A (Ta)	60mOhm @ 3.1A, 10V	1.8V @ 250µA	6.6nC @ 10V	278pF @ 15V	880mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
XP3832CMT	YAGEO XSEMI	FET 2N-CH 30V 16A 55A 27A 85A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V Power - Max: 2.08W (Ta), 2.27W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PMPAK® 5 x 6	封装: -	库存3,000	-	30V	16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)	5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V	2.2V @ 250µA	30.4nC @ 10V	1712pF @ 15V, 3920pF @ 15V	2.08W (Ta), 2.27W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PMPAK® 5 x 6
PJQ2800_R1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 5.2A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V Power - Max: 1.45W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: DFN2020-6L	封装: -	库存9,000	-	20V	5.2A (Ta)	32mOhm @ 5.2A, 4.5V	900mV @ 250µA	6.3nC @ 4.5V	515pF @ 10V	1.45W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	DFN2020-6L
DMP2110UVTQ-13	Diodes Incorporated	MOSFET 2P-CH 20V 1.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V Power - Max: 740mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	20V	1.8A (Ta)	150mOhm @ 2.8A, 4.5V	1V @ 250µA	6nC @ 4.5V	443pF @ 6V	740mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
BUK9K52-60RAX	Nexperia USA Inc.	MOSFET 2N-CH 60V 16A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Power - Max: 32W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存7,314	Logic Level Gate	60V	16A (Ta)	49mOhm @ 5A, 10V	2.1V @ 1mA	5.6nC @ 5V	725pF @ 25V	32W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
GSFQ6806	Good-Ark Semiconductor	MOSFET 2N-CH 60V 20A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V Power - Max: 2.1W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存17,673	-	60V	20A (Tc)	28mOhm @ 20A, 10V	2.5V @ 250µA	42nC @ 10V	2440pF @ 20V	2.1W (Tc)	-50°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IPG20N04S409AATMA1	Infineon Technologies	MOSFET 2N-CH 40V 20A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Power - Max: 54W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: -	库存15,000	-	40V	20A (Tc)	8.6mOhm @ 17A, 10V	4V @ 22µA	28nC @ 10V	2250pF @ 25V	54W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
UPA610TA-T1-A	Renesas Electronics Corporation	MOSFET 2P-CH 30V 0.1A SC74-6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 3V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74-6, (Mini Mold)	封装: -	Request a Quote	Logic Level Gate	30V	100mA	13Ohm @ 10mA, 10V	-	-	5pF @ 3V	300mW	150°C (TJ)	Surface Mount	SC-74, SOT-457	SC-74-6, (Mini Mold)
SP8K24FRATB	Rohm Semiconductor	MOSFET 2N-CH 45V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存3	-	45V	6A (Ta)	25mOhm @ 6A, 10V	2.5V @ 1mA	21.6nC @ 5V	1400pF @ 10V	2W	150°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTTFD018N08LC	onsemi	MOSFET 2N-CH 80V 6A/26A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V Power - Max: 1.7W (Ta), 26W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	封装: -	库存8,970	-	80V	6A (Ta), 26A (Tc)	18mOhm @ 7.8A, 10V	2.5V @ 44µA	12.4nC @ 10V	856pF @ 40V	1.7W (Ta), 26W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)

AO4828L

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 60V 4.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存10,716

Logic Level Gate

60V

-

56 mOhm @ 4.5A, 10V

3V @ 250µA

10.5nC @ 10V

540pF @ 30V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VQ1006P

Vishay Siliconix

MOSFET 4N-CH 90V 0.4A 14DIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 400mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: -
Supplier Device Package: 14-DIP

封装: -

库存6,168

Logic Level Gate

90V

400mA

4.5 Ohm @ 1A, 10V

2.5V @ 1mA

-

60pF @ 25V

2W

-55°C ~ 150°C (TJ)

Through Hole

-

14-DIP

BSS84DW-7

Diodes Incorporated

MOSFET 2P-CH 50V 0.13A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 130mA
Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存5,904

Logic Level Gate

50V

130mA

10 Ohm @ 100mA, 5V

2V @ 1mA

-

45pF @ 25V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ALD110808SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.8V
Vgs(th) (Max) @ Id: 820mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存6,704

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.8V

820mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

DMPH6050SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,576

Standard

-

5.2A (Ta)

48 mOhm @ 5A, 10V

3V @ 250µA

14.5nC @ 4.5V

1525pF @ 30V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

VEC2415-TL-W

ON Semiconductor

MOSFET 2N-CH 60V 3A VEC8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封装: 8-SMD, Flat Lead

库存4,336

Logic Level Gate, 4V Drive

60V

3A

80 mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

1W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

CPH6636R-TL-W

ON Semiconductor

MOSFET 2N-CH 24V 6A CPH6

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 900mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封装: SOT-23-6 Thin, TSOT-23-6

库存5,904

Logic Level Gate, 2.5V Drive

24V

6A

20 mOhm @ 3A, 4.5V

-

3nC @ 4.5V

-

900mW

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

FDS6912A

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存548,340

Logic Level Gate

30V

6A

28 mOhm @ 6A, 10V

3V @ 250µA

8.1nC @ 5V

575pF @ 15V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

BUK7K18-40EX

Nexperia USA Inc.

MOSFET 2N-CH 40V 24.2A LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存12,744

Standard

40V

24.2A

19 mOhm @ 10A, 10V

4V @ 1mA

11.8nC @ 10V

808pF @ 25V

38W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

PHP225,118

Nexperia USA Inc.

MOSFET 2P-CH 30V 2.3A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存50,442

Logic Level Gate

30V

2.3A

250 mOhm @ 1A, 10V

2.8V @ 1mA

25nC @ 10V

250pF @ 20V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1965DH-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存147,012

Logic Level Gate

12V

1.3A

390 mOhm @ 1A, 4.5V

1V @ 250µA

4.2nC @ 8V

120pF @ 6V

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

SI4922BDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存518,976

Standard

30V

8A

16 mOhm @ 5A, 10V

1.8V @ 250µA

62nC @ 10V

2070pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4599DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 40V 6.8A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Rds On (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存498,456

Logic Level Gate

40V

6.8A, 5.8A

35.5 mOhm @ 5A, 10V

3V @ 250µA

20nC @ 10V

640pF @ 20V

3W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3732UVT-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

30V

1.1A (Ta)

460mOhm @ 200mA, 4.5V

0.95V @ 250µA

0.9nC @ 10V

40.8pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

IRFNL210BTA

Fairchild Semiconductor

MOSFET N-CH 200V

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

GSFB0205

Good-Ark Semiconductor

MOSFET 2P-CH 20V 4A 6PPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-PPAK (2x2)

封装: -

库存18,000

-

20V

4A (Ta)

49mOhm @ 1.5A, 4.5V

1V @ 250µA

9nC @ 4.5V

810pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-PPAK (2x2)

SQJB04ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存70,419

-

40V

30A (Tc)

11mOhm @ 5A, 10V

2.2V @ 250µA

20nC @ 10V

1055pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

DMC67D8UFDBQ-13

Diodes Incorporated

MOSFET N/P-CH 60V 0.39A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V, 20V
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
Power - Max: 580mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

Request a Quote

-

60V, 20V

390mA (Ta), 2.9A (Ta)

4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V

2.5V @ 250µA, 1.25V @ 250µA

0.4pC @ 4.5V, 7.3nC @ 4.5V

41pF @ 25V, 443pF @ 16V

580mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

MSCSM120DDUM31CTBL2NG

Microchip Technology

SIC 4N-CH 1200V 79A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Power - Max: 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

79A

31mOhm @ 40A, 20V

2.8V @ 1mA

232nC @ 20V

3020pF @ 1000V

310W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

VEC2415-TL-W-Z

onsemi

MOSFET 2N-CH 60V 3A SOT28

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Power - Max: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: SOT-28FL/VEC8

封装: -

Request a Quote

-

60V

3A (Ta)

80mOhm @ 1.5A, 10V

2.6V @ 1mA

10nC @ 10V

505pF @ 20V

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

SOT-28FL/VEC8

DMN3061SVTQ-7

Diodes Incorporated

MOSFET 2N-CH 30V 3.4A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Power - Max: 880mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

库存8,358

-

30V

3.4A (Ta)

60mOhm @ 3.1A, 10V

1.8V @ 250µA

6.6nC @ 10V

278pF @ 15V

880mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

XP3832CMT

YAGEO XSEMI

FET 2N-CH 30V 16A 55A 27A 85A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 15V, 3920pF @ 15V
Power - Max: 2.08W (Ta), 2.27W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PMPAK® 5 x 6

封装: -

库存3,000

-

30V

16A (Ta), 55A (Tc), 27A (Ta), 85A (Tc)

5mOhm @ 16A, 10V, 1.9mOhm @ 20A, 10V

2.2V @ 250µA

30.4nC @ 10V

1712pF @ 15V, 3920pF @ 15V

2.08W (Ta), 2.27W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PMPAK® 5 x 6

PJQ2800_R1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 5.2A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 10V
Power - Max: 1.45W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: DFN2020-6L

封装: -

库存9,000

-

20V

5.2A (Ta)

32mOhm @ 5.2A, 4.5V

900mV @ 250µA

6.3nC @ 4.5V

515pF @ 10V

1.45W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

DFN2020-6L

DMP2110UVTQ-13

Diodes Incorporated

MOSFET 2P-CH 20V 1.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 6V
Power - Max: 740mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

20V

1.8A (Ta)

150mOhm @ 2.8A, 4.5V

1V @ 250µA

6nC @ 4.5V

443pF @ 6V

740mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

BUK9K52-60RAX

Nexperia USA Inc.

MOSFET 2N-CH 60V 16A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Power - Max: 32W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存7,314

Logic Level Gate

60V

16A (Ta)

49mOhm @ 5A, 10V

2.1V @ 1mA

5.6nC @ 5V

725pF @ 25V

32W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

GSFQ6806

Good-Ark Semiconductor

MOSFET 2N-CH 60V 20A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Power - Max: 2.1W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存17,673

-

60V

20A (Tc)

28mOhm @ 20A, 10V

2.5V @ 250µA

42nC @ 10V

2440pF @ 20V

2.1W (Tc)

-50°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IPG20N04S409AATMA1

Infineon Technologies

MOSFET 2N-CH 40V 20A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 22µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Power - Max: 54W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: -

库存15,000

-

40V

20A (Tc)

8.6mOhm @ 17A, 10V

4V @ 22µA

28nC @ 10V

2250pF @ 25V

54W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

UPA610TA-T1-A

Renesas Electronics Corporation

MOSFET 2P-CH 30V 0.1A SC74-6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 13Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 3V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74-6, (Mini Mold)

封装: -

Request a Quote

Logic Level Gate

30V

100mA

13Ohm @ 10mA, 10V

-

5pF @ 3V

300mW

150°C (TJ)

Surface Mount

SC-74, SOT-457

SC-74-6, (Mini Mold)

SP8K24FRATB

Rohm Semiconductor

MOSFET 2N-CH 45V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存3

-

45V

6A (Ta)

25mOhm @ 6A, 10V

2.5V @ 1mA

21.6nC @ 5V

1400pF @ 10V

2W

150°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NTTFD018N08LC

onsemi

MOSFET 2N-CH 80V 6A/26A 12WQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 856pF @ 40V
Power - Max: 1.7W (Ta), 26W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Supplier Device Package: 12-WQFN (3.3x3.3)

封装: -

库存8,970

-

80V

6A (Ta), 26A (Tc)

18mOhm @ 7.8A, 10V

2.5V @ 44µA

12.4nC @ 10V

856pF @ 40V

1.7W (Ta), 26W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWQFN

12-WQFN (3.3x3.3)