页 122 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EFC8822R-X-TF	ON Semiconductor	MOSFET N-CH DUAL 6CSP FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,608	-	-	-	-	-	-	-	-	-	-	-	-
GWS9293	Intersil	MOSFET 2N-CH 20V 9.4A 4QFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 17 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 3.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VDFN Supplier Device Package: 4-QFN (2x2)	封装: 4-VDFN	库存7,840	Standard	20V	9.4A (Ta)	17 mOhm @ 3A, 4.5V	1.5V @ 1mA	3.5nC @ 4V	400pF @ 10V	3.6W	-55°C ~ 150°C (TJ)	Surface Mount	4-VDFN	4-QFN (2x2)
AO6808_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4.6A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存6,768	Logic Level Gate	20V	4.6A	23 mOhm @ 6A, 4.5V	1V @ 250µA	21nC @ 10V	780pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
SI6966EDQ-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存149,952	Logic Level Gate	20V	-	30 mOhm @ 5.2A, 4.5V	600mV @ 250µA (Min)	25nC @ 4.5V	-	1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTM50DHM75TG	Microsemi Corporation	MOSFET 2N-CH 500V 46A SP4 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V Power - Max: 357W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存4,032	Standard	500V	46A	90 mOhm @ 23A, 10V	5V @ 2.5mA	123nC @ 10V	5600pF @ 25V	357W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
FDW2521C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.5A, 3.8A Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存78,804	Logic Level Gate	20V	5.5A, 3.8A	21 mOhm @ 5.5A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	1082pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
ZXMN3A06N8TA	Diodes Incorporated	MOSFET 2N-CH 30V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,080	Standard	30V	-	-	-	-	-	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
ZXMN3A06DN8TC	Diodes Incorporated	MOSFET 2N-CH 30V 4.9A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存363,912	Logic Level Gate	30V	4.9A	35 mOhm @ 9A, 10V	1V @ 250µA (Min)	17.5nC @ 10V	796pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTQD6968R2	ON Semiconductor	MOSFET 2N-CH 20V 6.6A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 16V Power - Max: 1.42W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存21,876	Logic Level Gate	20V	6.6A	22 mOhm @ 6.6A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	900pF @ 16V	1.42W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTMC1300R2	ON Semiconductor	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V Power - Max: 2W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,792	Logic Level Gate	30V	2.2A, 1.8A	90 mOhm @ 3A, 10V	2.2V @ 250µA	5nC @ 4.5V	300pF @ 20V	2W	-65°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BSL214NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 1.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封装: SOT-23-6 Thin, TSOT-23-6	库存5,568	Logic Level Gate, 2.5V Drive	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8nC @ 5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
APTM50TAM65FPG	Microsemi Corporation	MOSFET 6N-CH 500V 51A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封装: SP6	库存7,040	Standard	500V	51A	78 mOhm @ 25.5A, 10V	5V @ 2.5mA	140nC @ 10V	7000pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
DMN3055LFDB-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: 2 N-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存4,960	Standard	-	5A (Ta)	40 mOhm @ 3A, 4.5V	1.5V @ 250µA	5.3nC @ 4.5V	458pF @ 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
CSD88584Q5DCT	Texas Instruments	MOSFET ARRAY 2N-CH 40V 22VSON FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	封装: 22-PowerTFDFN	库存5,408	Standard	40V	-	0.95 mOhm @ 30A, 10V	2.3V @ 250µA	88nC @ 4.5V	12400pF @ 20V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)
TSM3911DCX6 RFG	TSC America Inc.	MOSFET, DUAL, P-CHANNEL, -20V, - FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封装: SOT-23-6	库存2,608	Standard	20V	2.2A (Ta)	140 mOhm @ 2.2A, 4.5V	950mV @ 250µA	15.23nC @ 4.5V	882.51pF @ 6V	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
ALD310702PCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 180mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存7,760	Standard	8V	-	-	180mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
NX7002AKS,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.17A SC-88 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存27,186	Logic Level Gate	60V	170mA	4.5 Ohm @ 100mA, 10V	2.1V @ 250µA	0.43nC @ 4.5V	17pF @ 10V	220mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
UM6K31NTN	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A UMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封装: 6-TSSOP, SC-88, SOT-363	库存782,052	Logic Level Gate, 2.5V Drive	60V	250mA	2.4 Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
SQJQ906E-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 95A PPAK8X8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Supplier Device Package: PowerPAK® 8 x 8 Dual	封装: -	库存5,166	-	40V	95A (Tc)	3.3mOhm @ 5A, 10V	3.5V @ 250µA	42nC @ 10V	3600pF @ 20V	50W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8 Dual	PowerPAK® 8 x 8 Dual
AOC2804B	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 4DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XDFN Supplier Device Package: 4-DFN (1.5x1.5)	封装: -	Request a Quote	-	-	-	-	1.3V @ 250µA	9.5nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	4-XDFN	4-DFN (1.5x1.5)
SCH2817-TL-H	onsemi	NCH+SBD 1.8V DRIVE SERIES FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PSMN9R3-60HSX	Nexperia USA Inc.	MOSFET 2N-CH 60V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V Power - Max: 68W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存4,710	-	60V	40A (Ta)	9.3mOhm @ 10A, 10V	4V @ 1mA	34.2nC @ 10V	2348pF @ 25V	68W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
NVMFD027N10MCLT1G	onsemi	PTNG 100V LL SO8FL DUAL FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 38µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V Power - Max: 3.1W (Ta), 46W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	100V	7.4A (Ta), 28A (Tc)	26mOhm @ 7A, 10V	3V @ 38µA	11nC @ 10V	720pF @ 50V	3.1W (Ta), 46W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
SSM6N55NU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 4A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-µDFN (2x2)	封装: -	库存1,455	Logic Level Gate	30V	4A	46mOhm @ 4A, 10V	2.5V @ 100µA	2.5nC @ 4.5V	280pF @ 15V	1W	150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-µDFN (2x2)
DMC62D2SV-13	Diodes Incorporated	MOSFET N/P-CH 60V 0.48A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	60V	480mA (Ta), 320mA (Ta)	1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V	2.5V @ 250µA, 3V @ 250µA	1.04nC @ 10V, 1.1nC @ 10V	41pF @ 30V, 40pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
NXV08H250DPT2	onsemi	APM17-MFA, MV7 80V, AL2O3, 2 PHA FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V Vgs(th) (Max) @ Id: 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Power - Max: - Operating Temperature: -40°C ~ 125°C Mounting Type: Through Hole Package / Case: 17-PowerDIP Module (2.020", 51.30mm) Supplier Device Package: APM17-MFA	封装: -	Request a Quote	-	80V	-	0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V	4.6V @ 1mA	320nC @ 10V	24350pF @ 40V	-	-40°C ~ 125°C	Through Hole	17-PowerDIP Module (2.020", 51.30mm)	APM17-MFA
DMN4027SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 40V 5.4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	40V	5.4A (Ta)	27mOhm @ 7A, 10V	3V @ 250µA	12.9nC @ 10V	604pF @ 20V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSO615NGXUMA1	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8DSO FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: -	库存80,190	Logic Level Gate	60V	2.6A	150mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
AOD609G	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 12A TO252-4L FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	封装: -	Request a Quote	-	40V	12A (Tc)	30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V	3V @ 250µA	13nC @ 10V, 21nC @ 10V	545pF @ 20V, 890pF @ 20V	2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252-4L
DMC2025UFDB-13	Diodes Incorporated	MOSFET N/P-CH 20V 6A/3.5A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	20V	6A (Ta), 3.5A (Ta)	25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V	1V @ 250µA, 1.4V @ 250µA	12.3nC @ 10V, 15nC @ 8V	486pF @ 10V, 642pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)

EFC8822R-X-TF

ON Semiconductor

MOSFET N-CH DUAL 6CSP

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,608

-

GWS9293

Intersil

MOSFET 2N-CH 20V 9.4A 4QFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 17 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 3.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VDFN
Supplier Device Package: 4-QFN (2x2)

封装: 4-VDFN

库存7,840

Standard

20V

9.4A (Ta)

17 mOhm @ 3A, 4.5V

1.5V @ 1mA

3.5nC @ 4V

400pF @ 10V

3.6W

-55°C ~ 150°C (TJ)

Surface Mount

4-VDFN

4-QFN (2x2)

AO6808_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4.6A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存6,768

Logic Level Gate

20V

4.6A

23 mOhm @ 6A, 4.5V

1V @ 250µA

21nC @ 10V

780pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

SI6966EDQ-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存149,952

Logic Level Gate

20V

-

30 mOhm @ 5.2A, 4.5V

600mV @ 250µA (Min)

25nC @ 4.5V

-

1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTM50DHM75TG

Microsemi Corporation

MOSFET 2N-CH 500V 46A SP4

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 46A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Power - Max: 357W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存4,032

Standard

500V

46A

90 mOhm @ 23A, 10V

5V @ 2.5mA

123nC @ 10V

5600pF @ 25V

357W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

FDW2521C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 8-TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 3.8A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1082pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存78,804

Logic Level Gate

20V

5.5A, 3.8A

21 mOhm @ 5.5A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

1082pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

ZXMN3A06N8TA

Diodes Incorporated

MOSFET 2N-CH 30V 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,080

Standard

30V

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

ZXMN3A06DN8TC

Diodes Incorporated

MOSFET 2N-CH 30V 4.9A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 796pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存363,912

Logic Level Gate

30V

4.9A

35 mOhm @ 9A, 10V

1V @ 250µA (Min)

17.5nC @ 10V

796pF @ 25V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NTQD6968R2

ON Semiconductor

MOSFET 2N-CH 20V 6.6A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 16V
Power - Max: 1.42W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存21,876

Logic Level Gate

20V

6.6A

22 mOhm @ 6.6A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

900pF @ 16V

1.42W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTMC1300R2

ON Semiconductor

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A, 1.8A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 20V
Power - Max: 2W
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,792

Logic Level Gate

30V

2.2A, 1.8A

90 mOhm @ 3A, 10V

2.2V @ 250µA

5nC @ 4.5V

300pF @ 20V

2W

-65°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BSL214NH6327XTSA1

Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

库存5,568

Logic Level Gate, 2.5V Drive

20V

1.5A

140 mOhm @ 1.5A, 4.5V

1.2V @ 3.7µA

0.8nC @ 5V

143pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

APTM50TAM65FPG

Microsemi Corporation

MOSFET 6N-CH 500V 51A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封装: SP6

库存7,040

Standard

500V

51A

78 mOhm @ 25.5A, 10V

5V @ 2.5mA

140nC @ 10V

7000pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

DMN3055LFDB-13

Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

FET Type: 2 N-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存4,960

Standard

-

5A (Ta)

40 mOhm @ 3A, 4.5V

1.5V @ 250µA

5.3nC @ 4.5V

458pF @ 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

CSD88584Q5DCT

Texas Instruments

MOSFET ARRAY 2N-CH 40V 22VSON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerTFDFN
Supplier Device Package: 22-VSON-CLIP (5x6)

封装: 22-PowerTFDFN

库存5,408

Standard

40V

-

0.95 mOhm @ 30A, 10V

2.3V @ 250µA

88nC @ 4.5V

12400pF @ 20V

12W

-55°C ~ 150°C (TJ)

Surface Mount

22-PowerTFDFN

22-VSON-CLIP (5x6)

TSM3911DCX6 RFG

TSC America Inc.

MOSFET, DUAL, P-CHANNEL, -20V, -

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.23nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 882.51pF @ 6V
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封装: SOT-23-6

库存2,608

Standard

20V

2.2A (Ta)

140 mOhm @ 2.2A, 4.5V

950mV @ 250µA

15.23nC @ 4.5V

882.51pF @ 6V

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

ALD310702PCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 180mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存7,760

Standard

8V

-

180mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

NX7002AKS,115

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.17A SC-88

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.43nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存27,186

Logic Level Gate

60V

170mA

4.5 Ohm @ 100mA, 10V

2.1V @ 250µA

0.43nC @ 4.5V

17pF @ 10V

220mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

UM6K31NTN

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封装: 6-TSSOP, SC-88, SOT-363

库存782,052

Logic Level Gate, 2.5V Drive

60V

250mA

2.4 Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

SQJQ906E-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 95A PPAK8X8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Supplier Device Package: PowerPAK® 8 x 8 Dual

封装: -

库存5,166

-

40V

95A (Tc)

3.3mOhm @ 5A, 10V

3.5V @ 250µA

42nC @ 10V

3600pF @ 20V

50W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® 8 x 8 Dual

AOC2804B

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 4DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XDFN
Supplier Device Package: 4-DFN (1.5x1.5)

封装: -

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-

1.3V @ 250µA

9.5nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

4-XDFN

4-DFN (1.5x1.5)

SCH2817-TL-H

onsemi

NCH+SBD 1.8V DRIVE SERIES

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

PSMN9R3-60HSX

Nexperia USA Inc.

MOSFET 2N-CH 60V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2348pF @ 25V
Power - Max: 68W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存4,710

-

60V

40A (Ta)

9.3mOhm @ 10A, 10V

4V @ 1mA

34.2nC @ 10V

2348pF @ 25V

68W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

NVMFD027N10MCLT1G

onsemi

PTNG 100V LL SO8FL DUAL

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Power - Max: 3.1W (Ta), 46W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

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-

100V

7.4A (Ta), 28A (Tc)

26mOhm @ 7A, 10V

3V @ 38µA

11nC @ 10V

720pF @ 50V

3.1W (Ta), 46W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

SSM6N55NU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
Power - Max: 1W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-µDFN (2x2)

封装: -

库存1,455

Logic Level Gate

30V

4A

46mOhm @ 4A, 10V

2.5V @ 100µA

2.5nC @ 4.5V

280pF @ 15V

1W

150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-µDFN (2x2)

DMC62D2SV-13

Diodes Incorporated

MOSFET N/P-CH 60V 0.48A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 480mA (Ta), 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V, 1.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V, 40pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

Request a Quote

-

60V

480mA (Ta), 320mA (Ta)

1.7Ohm @ 200mA, 10V, 4Ohm @ 200mA, 10V

2.5V @ 250µA, 3V @ 250µA

1.04nC @ 10V, 1.1nC @ 10V

41pF @ 30V, 40pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

NXV08H250DPT2

onsemi

APM17-MFA, MV7 80V, AL2O3, 2 PHA

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Power - Max: -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Through Hole
Package / Case: 17-PowerDIP Module (2.020", 51.30mm)
Supplier Device Package: APM17-MFA

封装: -

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-

80V

-

0.88mOhm @ 160A, 14V, 0.71mOhm @ 160A, 14V

4.6V @ 1mA

320nC @ 10V

24350pF @ 40V

-

-40°C ~ 125°C

Through Hole

17-PowerDIP Module (2.020", 51.30mm)

APM17-MFA

DMN4027SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 40V 5.4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

40V

5.4A (Ta)

27mOhm @ 7A, 10V

3V @ 250µA

12.9nC @ 10V

604pF @ 20V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSO615NGXUMA1

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8DSO

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: -

库存80,190

Logic Level Gate

60V

2.6A

150mOhm @ 2.6A, 4.5V

2V @ 20µA

20nC @ 10V

380pF @ 25V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

AOD609G

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 12A TO252-4L

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V
Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

封装: -

Request a Quote

-

40V

12A (Tc)

30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V

3V @ 250µA

13nC @ 10V, 21nC @ 10V

545pF @ 20V, 890pF @ 20V

2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

TO-252-4L

DMC2025UFDB-13

Diodes Incorporated

MOSFET N/P-CH 20V 6A/3.5A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

Request a Quote

-

20V

6A (Ta), 3.5A (Ta)

25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V

1V @ 250µA, 1.4V @ 250µA

12.3nC @ 10V, 15nC @ 8V

486pF @ 10V, 642pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)