Logo

IGBTs - Single (4473)

Records 0
Reset All
Records 4473
Page 447/448

Part Number:

IXYH40N120B4H1

Manufacturer:

IXYS

Description:

IGBT TRENCH 1200V 112A TO247

  • Series:

    XPT™

  • IGBT Type:

    Trench

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    112 A

  • Current - Collector Pulsed (Icm):

    240 A

  • Vce(on) (Max) @ Vge, Ic:

    2.1V @ 15V, 32A

  • Power - Max:

    600 W

  • Switching Energy:

    5.9mJ (on), 2.9mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    94 nC

  • Td (on/off) @ 25°C:

    19ns/220ns

  • Test Condition:

    960V, 32A, 5Ohm, 15V

  • Reverse Recovery Time (trr):

    430 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247 (IXTH)

Stock:

840

1

Part Number:

SIGC109T120R3

Manufacturer:

Infineon Technologies

Description:

INSULATED GATE BIPOLAR TRANSISTO

  • Series:

    -

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    -

  • Current - Collector Pulsed (Icm):

    300 A

  • Vce(on) (Max) @ Vge, Ic:

    2.1V @ 15V, 100A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

IXYH55N120C4H1

Manufacturer:

IXYS

Description:

IGBT TRENCH 1200V 126A TO247

  • Series:

    XPT™

  • IGBT Type:

    Trench

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    126 A

  • Current - Collector Pulsed (Icm):

    290 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 55A

  • Power - Max:

    650 W

  • Switching Energy:

    3.5mJ (on), 1.34mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    114 nC

  • Td (on/off) @ 25°C:

    20ns/180ns

  • Test Condition:

    600V, 40A, 5Ohm, 15V

  • Reverse Recovery Time (trr):

    180 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247 (IXTH)

Stock:

0

1

Part Number:

IXYY8N90C3-TRL

Manufacturer:

IXYS

Description:

IXYY8N90C3 TRL

  • Series:

    GenX3™, XPT™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    900 V

  • Current - Collector (Ic) (Max):

    20 A

  • Current - Collector Pulsed (Icm):

    48 A

  • Vce(on) (Max) @ Vge, Ic:

    3V @ 15V, 8A

  • Power - Max:

    125 W

  • Switching Energy:

    460µJ (on), 180µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    13.3 nC

  • Td (on/off) @ 25°C:

    16ns/40ns

  • Test Condition:

    450V, 8A, 30Ohm, 15V

  • Reverse Recovery Time (trr):

    20 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

  • Supplier Device Package:

    TO-252AA

Stock:

0

1

Part Number:

IPB014N08NM6ATMA1

Manufacturer:

Infineon Technologies

Description:

TRENCH 40<-<100V

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Current - Collector (Ic) (Max):

    -

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    -

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    -

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

RGTV80TS65GC11

Manufacturer:

Rohm Semiconductor

Description:

IGBT TRNCH FIELD 650V 78A TO247N

  • Series:

    -

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    78 A

  • Current - Collector Pulsed (Icm):

    160 A

  • Vce(on) (Max) @ Vge, Ic:

    1.9V @ 15V, 40A

  • Power - Max:

    234 W

  • Switching Energy:

    1.02mJ (on), 710µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    81 nC

  • Td (on/off) @ 25°C:

    39ns/113ns

  • Test Condition:

    400V, 40A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247N

Stock:

1350

1

Part Number:

AIMBG75R016M1HXTMA1

Manufacturer:

Infineon Technologies

Description:

IGBT

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Current - Collector (Ic) (Max):

    -

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    -

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    -

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

3000

1

Part Number:

STG200G65FD8AG

Manufacturer:

STMicroelectronics

Description:

IGBT TRENCH FS 650V 200A DIE

  • Series:

    M

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    200 A

  • Current - Collector Pulsed (Icm):

    600 A

  • Vce(on) (Max) @ Vge, Ic:

    1.8V @ 15V, 200A

  • Power - Max:

    -

  • Switching Energy:

    5.34mJ (on), 6.23mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    701 nC

  • Td (on/off) @ 25°C:

    66.2ns/442.7ns

  • Test Condition:

    400V, 200A, 4.7Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

AOK75B65H1

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

IGBT 650V 75A TO-247

  • Series:

    Alpha IGBT™

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    150 A

  • Current - Collector Pulsed (Icm):

    225 A

  • Vce(on) (Max) @ Vge, Ic:

    2.4V @ 15V, 75A

  • Power - Max:

    556 W

  • Switching Energy:

    3.77mJ (on), 2.04mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    109 nC

  • Td (on/off) @ 25°C:

    47ns/175ns

  • Test Condition:

    400V, 75A, 4Ohm, 15V

  • Reverse Recovery Time (trr):

    295 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247

Stock:

0

1

Part Number:

BSM300GA160DN13CB7HOSA1

Manufacturer:

Infineon Technologies

Description:

BSM300GA160 - INSULATED GATE BIP

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Current - Collector (Ic) (Max):

    -

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    -

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    -

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

获取最新资讯

每日获取来自全球众多供应商的最新优惠资讯