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IGBTs - Single (4473)

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Part Number:

RGW50TS65DGC11

Manufacturer:

Rohm Semiconductor

Description:

IGBT TRNCH FIELD 650V 50A TO247N

  • Series:

    -

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    100 A

  • Vce(on) (Max) @ Vge, Ic:

    1.9V @ 15V, 25A

  • Power - Max:

    156 W

  • Switching Energy:

    390µJ (on), 430µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    73 nC

  • Td (on/off) @ 25°C:

    35ns/102ns

  • Test Condition:

    400V, 25A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247N

Stock:

1338

1

Part Number:

LGD18N40ATH

Manufacturer:

Littelfuse

Description:

IGBT 430V 18A TO252

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    430 V

  • Current - Collector (Ic) (Max):

    18 A

  • Current - Collector Pulsed (Icm):

    50 A

  • Vce(on) (Max) @ Vge, Ic:

    -

  • Power - Max:

    115 W

  • Switching Energy:

    -

  • Input Type:

    Logic

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    0.7µs/4µs

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

  • Supplier Device Package:

    TO-252 (DPAK)

Stock:

0

1

Part Number:

SIGC42T60NCX1SA6

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    43ns/130ns

  • Test Condition:

    300V, 50A, 3.3Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC42T60NCX1SA3

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    43ns/130ns

  • Test Condition:

    300V, 50A, 3.3Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC42T60NCX1SA5

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    43ns/130ns

  • Test Condition:

    300V, 50A, 3.3Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC42T60NCX1SA4

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    43ns/130ns

  • Test Condition:

    300V, 50A, 3.3Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

IXYK110N120A4

Manufacturer:

IXYS

Description:

IGBT 1200V 110A GENX4 XPT TO-264

  • Series:

    XPT™, GenX4™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    375 A

  • Current - Collector Pulsed (Icm):

    900 A

  • Vce(on) (Max) @ Vge, Ic:

    1.8V @ 15V, 110A

  • Power - Max:

    1360 W

  • Switching Energy:

    2.5mJ (on), 8.4mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    305 nC

  • Td (on/off) @ 25°C:

    42ns/550ns

  • Test Condition:

    600V, 50A, 1.5Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-264-3, TO-264AA

  • Supplier Device Package:

    TO-264 (IXYK)

Stock:

39

1

Part Number:

IXYK110N120C4

Manufacturer:

IXYS

Description:

IGBT 1200V 110A GEN4 XPT TO264

  • Series:

    XPT™

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    310 A

  • Current - Collector Pulsed (Icm):

    740 A

  • Vce(on) (Max) @ Vge, Ic:

    2.4V @ 15V, 110A

  • Power - Max:

    1360 W

  • Switching Energy:

    3.6mJ (on), 1.9mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    330 nC

  • Td (on/off) @ 25°C:

    40ns/320ns

  • Test Condition:

    600V, 50A, 2Ohm, 15V

  • Reverse Recovery Time (trr):

    48 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-264-3, TO-264AA

  • Supplier Device Package:

    PLUS264™

Stock:

12

1

Part Number:

IXYK110N120B4

Manufacturer:

IXYS

Description:

IGBT 1200V 110A GEN4 XPT TO264

  • Series:

    XPT™

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    340 A

  • Current - Collector Pulsed (Icm):

    800 A

  • Vce(on) (Max) @ Vge, Ic:

    2.1V @ 15V, 110A

  • Power - Max:

    1360 W

  • Switching Energy:

    3.6mJ (on), 3.85mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    340 nC

  • Td (on/off) @ 25°C:

    45ns/390ns

  • Test Condition:

    600V, 50A, 2Ohm, 15V

  • Reverse Recovery Time (trr):

    50 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-264-3, TO-264AA

  • Supplier Device Package:

    TO-264 (IXYK)

Stock:

39

1

Part Number:

AOB15B65MQ1

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

IGBT 15A

  • Series:

    AlphaIGBT™

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    30 A

  • Current - Collector Pulsed (Icm):

    45 A

  • Vce(on) (Max) @ Vge, Ic:

    2.15V @ 15V, 15A

  • Power - Max:

    214 W

  • Switching Energy:

    290µJ (on), 200µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    32 nC

  • Td (on/off) @ 25°C:

    15ns/94ns

  • Test Condition:

    400V, 15A, 20Ohm, 15V

  • Reverse Recovery Time (trr):

    106 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

  • Supplier Device Package:

    TO-263 (D2PAK)

Stock:

0

1

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