Part Number:
IRG4CC40KB
Manufacturer:
Infineon Technologies
Description:
IGBT CHIP
Series:
-
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 10A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
STGWA30IH65DF
Manufacturer:
STMicroelectronics
Description:
TRENCH GATE FIELD-STOP 650 V, 30
Series:
IH
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
60 A
Current - Collector Pulsed (Icm):
90 A
Vce(on) (Max) @ Vge, Ic:
2.05V @ 15V, 30A
Power - Max:
180 W
Switching Energy:
123µJ (off)
Input Type:
Standard
Gate Charge:
80 nC
Td (on/off) @ 25°C:
-/200ns
Test Condition:
400V, 30A, 22Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247 Long Leads
Stock:
240
Part Number:
STGWA20H65DFB2
Manufacturer:
STMicroelectronics
Description:
IGBT TRENCH FS 650V 40A TO247
Series:
HB2
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
40 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 20A
Power - Max:
147 W
Switching Energy:
265µJ (on), 214µJ (off)
Input Type:
Standard
Gate Charge:
56 nC
Td (on/off) @ 25°C:
16ns/78.8ns
Test Condition:
400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):
215 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247 Long Leads
Stock:
111
Part Number:
IRG4CC50WC
Manufacturer:
Infineon Technologies
Description:
IGBT CHIP
Series:
-
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
27 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
33 ns
Operating Temperature:
-55°C ~ 150°C
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
IRG4CC50WB
Manufacturer:
Infineon Technologies
Description:
IGBT CHIP
Series:
-
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.3V @ 15V, 10A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC156T60NR2CX1SA2
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
200 A
Current - Collector Pulsed (Icm):
600 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 200A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
180ns/285ns
Test Condition:
300V, 200A, 1.5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC156T60NR2CX1SA4
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
200 A
Current - Collector Pulsed (Icm):
600 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 200A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
180ns/285ns
Test Condition:
300V, 200A, 1.5Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC100T65R3EX1SA2
Manufacturer:
Infineon Technologies
Description:
IGBT TRENCH FS 650V 200A DIE
Series:
TrenchStop™
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
200 A
Current - Collector Pulsed (Icm):
600 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 200A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
MIWP75N120DH1Y-BP
Manufacturer:
Micro Commercial Co
Description:
IGBT TRENCH FS 1200V 150A TO247
Series:
-
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
150 A
Current - Collector Pulsed (Icm):
300 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 75A
Power - Max:
600 W
Switching Energy:
7.3mJ (on), 2.2mJ (off)
Input Type:
Standard
Gate Charge:
650 nC
Td (on/off) @ 25°C:
23ns/227ns
Test Condition:
600V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247-3
Stock:
0
Part Number:
MIW50N65RA-BP
Manufacturer:
Micro Commercial Co
Description:
IGBT TRENCH FS 650V 100A TO247AB
Series:
-
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
100 A
Current - Collector Pulsed (Icm):
200 A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 50A
Power - Max:
357 W
Switching Energy:
1.49mJ (on), 670µJ (off)
Input Type:
Standard
Gate Charge:
210 nC
Td (on/off) @ 25°C:
28ns/129ns
Test Condition:
300V, 50A, 20Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247AB
Stock:
0
每日获取来自全球众多供应商的最新优惠资讯