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Part Number:

IKD08N65ET6ARMA1

Manufacturer:

Infineon Technologies

Description:

IGBT TRENCH FS 650V 15A TO252-3

  • Series:

    TrenchStop™

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    15 A

  • Current - Collector Pulsed (Icm):

    25 A

  • Vce(on) (Max) @ Vge, Ic:

    1.9V @ 15V, 5A

  • Power - Max:

    47 W

  • Switching Energy:

    110µJ (on), 40µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    17 nC

  • Td (on/off) @ 25°C:

    20ns/59ns

  • Test Condition:

    400V, 5A, 47Ohm, 15V

  • Reverse Recovery Time (trr):

    43 ns

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

  • Supplier Device Package:

    PG-TO252-3

Stock:

8982

1

Part Number:

IXXN340N65B4

Manufacturer:

IXYS

Description:

IGBT MODULE DISC IGBT SOT227B

  • Series:

    GenX4™, XPT™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    520 A

  • Current - Collector Pulsed (Icm):

    1200 A

  • Vce(on) (Max) @ Vge, Ic:

    1.7V @ 15V, 160A

  • Power - Max:

    1500 W

  • Switching Energy:

    4.4mJ (on), 2.2mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    553 nC

  • Td (on/off) @ 25°C:

    62ns/245ns

  • Test Condition:

    400V, 100A, 1Ohm, 15V

  • Reverse Recovery Time (trr):

    65 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    SOT-227-4, miniBLOC

  • Supplier Device Package:

    SOT-227B

Stock:

0

1

Part Number:

IXA70R1200NA

Manufacturer:

IXYS

Description:

DISC IGBT XPT-GENX3 SOT-227B(MIN

  • Series:

    XPT™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    100 A

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    2.1V @ 15V, 50A

  • Power - Max:

    350 W

  • Switching Energy:

    4.5mJ (on), 5.5mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    190 nC

  • Td (on/off) @ 25°C:

    70ns/250ns

  • Test Condition:

    600V, 50A, 15Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Chassis Mount

  • Package / Case:

    SOT-227-4, miniBLOC

  • Supplier Device Package:

    SOT-227B

Stock:

0

1

Part Number:

FD1200R12IE4B1S1BDMA1

Manufacturer:

Infineon Technologies

Description:

FD1200R12IE4B1S1BD - IGBT

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Current - Collector (Ic) (Max):

    -

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    -

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    -

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

Part Number:

STGD4H60DF

Manufacturer:

STMicroelectronics

Description:

IGBT TRENCH FS 600V 8A DPAK

  • Series:

    H

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    8 A

  • Current - Collector Pulsed (Icm):

    16 A

  • Vce(on) (Max) @ Vge, Ic:

    1.95V @ 15V, 3A

  • Power - Max:

    75 W

  • Switching Energy:

    68µJ (on), 45µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    35 nC

  • Td (on/off) @ 25°C:

    35ns/121ns

  • Test Condition:

    400V, 3A, 47Ohm, 15V

  • Reverse Recovery Time (trr):

    73 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

  • Supplier Device Package:

    DPAK (TO-252) type C2

Stock:

1500

1

Part Number:

STGWA80H65DFBAG

Manufacturer:

STMicroelectronics

Description:

AUTOMOTIVE-GRADE TRENCH GATE FIE

  • Series:

    -

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    120 A

  • Current - Collector Pulsed (Icm):

    240 A

  • Vce(on) (Max) @ Vge, Ic:

    2V @ 15V, 80A

  • Power - Max:

    535 W

  • Switching Energy:

    3.26mJ (on), 2.33mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    453 nC

  • Td (on/off) @ 25°C:

    -/360ns

  • Test Condition:

    400V, 80A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    64 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247 Long Leads

Stock:

0

1

Part Number:

SIGC18T60SNCX1SA4

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    20 A

  • Current - Collector Pulsed (Icm):

    60 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 20A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    36ns/250ns

  • Test Condition:

    400V, 20A, 16Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC18T60SNCX1SA3

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    20 A

  • Current - Collector Pulsed (Icm):

    60 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 20A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    36ns/250ns

  • Test Condition:

    400V, 20A, 16Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC18T60SNCX1SA2

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    20 A

  • Current - Collector Pulsed (Icm):

    60 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 20A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    36ns/250ns

  • Test Condition:

    400V, 20A, 16Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

63-8035

Manufacturer:

Infineon Technologies

Description:

IGBT CHIP

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    -

  • Current - Collector (Ic) (Max):

    -

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    -

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    -

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    -

  • Package / Case:

    -

  • Supplier Device Package:

    -

Stock:

0

1

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