Part Number:
IKD08N65ET6ARMA1
Manufacturer:
Infineon Technologies
Description:
IGBT TRENCH FS 650V 15A TO252-3
Series:
TrenchStop™
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
15 A
Current - Collector Pulsed (Icm):
25 A
Vce(on) (Max) @ Vge, Ic:
1.9V @ 15V, 5A
Power - Max:
47 W
Switching Energy:
110µJ (on), 40µJ (off)
Input Type:
Standard
Gate Charge:
17 nC
Td (on/off) @ 25°C:
20ns/59ns
Test Condition:
400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr):
43 ns
Operating Temperature:
-40°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package:
PG-TO252-3
Stock:
8982
Part Number:
IXXN340N65B4
Manufacturer:
IXYS
Description:
IGBT MODULE DISC IGBT SOT227B
Series:
GenX4™, XPT™
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
520 A
Current - Collector Pulsed (Icm):
1200 A
Vce(on) (Max) @ Vge, Ic:
1.7V @ 15V, 160A
Power - Max:
1500 W
Switching Energy:
4.4mJ (on), 2.2mJ (off)
Input Type:
Standard
Gate Charge:
553 nC
Td (on/off) @ 25°C:
62ns/245ns
Test Condition:
400V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr):
65 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
SOT-227-4, miniBLOC
Supplier Device Package:
SOT-227B
Stock:
0
Part Number:
IXA70R1200NA
Manufacturer:
IXYS
Description:
DISC IGBT XPT-GENX3 SOT-227B(MIN
Series:
XPT™
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
1200 V
Current - Collector (Ic) (Max):
100 A
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
Power - Max:
350 W
Switching Energy:
4.5mJ (on), 5.5mJ (off)
Input Type:
Standard
Gate Charge:
190 nC
Td (on/off) @ 25°C:
70ns/250ns
Test Condition:
600V, 50A, 15Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Mounting Type:
Chassis Mount
Package / Case:
SOT-227-4, miniBLOC
Supplier Device Package:
SOT-227B
Stock:
0
Part Number:
FD1200R12IE4B1S1BDMA1
Manufacturer:
Infineon Technologies
Description:
FD1200R12IE4B1S1BD - IGBT
Series:
-
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
-
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
STGD4H60DF
Manufacturer:
STMicroelectronics
Description:
IGBT TRENCH FS 600V 8A DPAK
Series:
H
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
8 A
Current - Collector Pulsed (Icm):
16 A
Vce(on) (Max) @ Vge, Ic:
1.95V @ 15V, 3A
Power - Max:
75 W
Switching Energy:
68µJ (on), 45µJ (off)
Input Type:
Standard
Gate Charge:
35 nC
Td (on/off) @ 25°C:
35ns/121ns
Test Condition:
400V, 3A, 47Ohm, 15V
Reverse Recovery Time (trr):
73 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package:
DPAK (TO-252) type C2
Stock:
1500
Part Number:
STGWA80H65DFBAG
Manufacturer:
STMicroelectronics
Description:
AUTOMOTIVE-GRADE TRENCH GATE FIE
Series:
-
IGBT Type:
Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
120 A
Current - Collector Pulsed (Icm):
240 A
Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 80A
Power - Max:
535 W
Switching Energy:
3.26mJ (on), 2.33mJ (off)
Input Type:
Standard
Gate Charge:
453 nC
Td (on/off) @ 25°C:
-/360ns
Test Condition:
400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr):
64 ns
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247 Long Leads
Stock:
0
Part Number:
SIGC18T60SNCX1SA4
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 20A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
36ns/250ns
Test Condition:
400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC18T60SNCX1SA3
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 20A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
36ns/250ns
Test Condition:
400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
SIGC18T60SNCX1SA2
Manufacturer:
Infineon Technologies
Description:
IGBT 3 CHIP 600V WAFER
Series:
-
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
600 V
Current - Collector (Ic) (Max):
20 A
Current - Collector Pulsed (Icm):
60 A
Vce(on) (Max) @ Vge, Ic:
2.5V @ 15V, 20A
Power - Max:
-
Switching Energy:
-
Input Type:
Standard
Gate Charge:
-
Td (on/off) @ 25°C:
36ns/250ns
Test Condition:
400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
Die
Supplier Device Package:
Die
Stock:
0
Part Number:
63-8035
Manufacturer:
Infineon Technologies
Description:
IGBT CHIP
Series:
-
IGBT Type:
-
Voltage - Collector Emitter Breakdown (Max):
-
Current - Collector (Ic) (Max):
-
Current - Collector Pulsed (Icm):
-
Vce(on) (Max) @ Vge, Ic:
-
Power - Max:
-
Switching Energy:
-
Input Type:
-
Gate Charge:
-
Td (on/off) @ 25°C:
-
Test Condition:
-
Reverse Recovery Time (trr):
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
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