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Part Number:

SIGC121T60NR2CX1SA3

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    150 A

  • Current - Collector Pulsed (Icm):

    450 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 150A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    125ns/225ns

  • Test Condition:

    300V, 150A, 1.5Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC121T60NR2CX1SA2

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    150 A

  • Current - Collector Pulsed (Icm):

    450 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 150A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    125ns/225ns

  • Test Condition:

    300V, 150A, 1.5Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

IRGC75B60UB

Manufacturer:

Infineon Technologies

Description:

IGBT CHIP

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    75 A

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    2.9V @ 15V, 75A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

IRGC75B60KB

Manufacturer:

Infineon Technologies

Description:

IGBT CHIP

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    75 A

  • Current - Collector Pulsed (Icm):

    -

  • Vce(on) (Max) @ Vge, Ic:

    2.1V @ 15V, 75A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    -

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

STGW50H65DFB2-4

Manufacturer:

STMicroelectronics

Description:

TRENCH GATE FIELD-STOP, 650 V, 5

  • Series:

    HB2

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    86 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    2V @ 15V, 50A

  • Power - Max:

    272 W

  • Switching Energy:

    629µJ (on), 478µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    151 nC

  • Td (on/off) @ 25°C:

    18ns/128ns

  • Test Condition:

    400V, 50A, 12Ohm, 15V

  • Reverse Recovery Time (trr):

    92 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-4

  • Supplier Device Package:

    TO-247-4

Stock:

162

1

Part Number:

SIGC42T60UNX7SA1

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    3.15V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    48ns/350ns

  • Test Condition:

    400V, 50A, 6.8Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC42T60UNX7SA2

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    3.15V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    48ns/350ns

  • Test Condition:

    400V, 50A, 6.8Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

IXYP30N65C3

Manufacturer:

IXYS

Description:

DISC IGBT XPT-GENX3 TO-220AB/FP

  • Series:

    GenX3™, XPT™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    60 A

  • Current - Collector Pulsed (Icm):

    118 A

  • Vce(on) (Max) @ Vge, Ic:

    2.7V @ 15V, 30A

  • Power - Max:

    270 W

  • Switching Energy:

    1mJ (on), 270µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    44 nC

  • Td (on/off) @ 25°C:

    21ns/75ns

  • Test Condition:

    400V, 30A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    42 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-220-3

  • Supplier Device Package:

    TO-220

Stock:

0

1

Part Number:

MIWP75N120-BP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    150 A

  • Current - Collector Pulsed (Icm):

    300 A

  • Vce(on) (Max) @ Vge, Ic:

    2.3V @ 15V, 75A

  • Power - Max:

    789 W

  • Switching Energy:

    11.3mJ (on), 4.7mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    622 nC

  • Td (on/off) @ 25°C:

    112ns/478ns

  • Test Condition:

    600V, 75A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    293 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247-3

Stock:

0

1

Part Number:

RGW80TS65DHRC11

Manufacturer:

Rohm Semiconductor

Description:

IGBT TRNCH FIELD 650V 80A TO247N

  • Series:

    -

  • IGBT Type:

    Trench Field Stop

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    80 A

  • Current - Collector Pulsed (Icm):

    160 A

  • Vce(on) (Max) @ Vge, Ic:

    1.9V @ 15V, 40A

  • Power - Max:

    214 W

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    110 nC

  • Td (on/off) @ 25°C:

    42ns/148ns

  • Test Condition:

    400V, 20A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    92 ns

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247N

Stock:

1350

1

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