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Part Number:

SIGC42T60UNX1SA2

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    3.15V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    48ns/350ns

  • Test Condition:

    400V, 50A, 6.8Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

SIGC42T60UNX1SA1

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    50 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    3.15V @ 15V, 50A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    48ns/350ns

  • Test Condition:

    400V, 50A, 6.8Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

GT30J341-Q

Manufacturer:

Toshiba Semiconductor and Storage

Description:

IGBT 600V 59A TO3P

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    59 A

  • Current - Collector Pulsed (Icm):

    120 A

  • Vce(on) (Max) @ Vge, Ic:

    2V @ 15V, 30A

  • Power - Max:

    230 W

  • Switching Energy:

    800µJ (on), 600µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    80ns/280ns

  • Test Condition:

    300V, 30A, 24Ohm, 15V

  • Reverse Recovery Time (trr):

    50 ns

  • Operating Temperature:

    175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-3P-3, SC-65-3

  • Supplier Device Package:

    TO-3P(N)

Stock:

21

1

Part Number:

SIGC81T60SNCX7SA1

Manufacturer:

Infineon Technologies

Description:

IGBT 3 CHIP 600V WAFER

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    100 A

  • Current - Collector Pulsed (Icm):

    300 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 100A

  • Power - Max:

    -

  • Switching Energy:

    -

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    65ns/450ns

  • Test Condition:

    400V, 100A, 3.3Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    Die

  • Supplier Device Package:

    Die

Stock:

0

1

Part Number:

IXGA30N60C3

Manufacturer:

IXYS

Description:

IGBT 600V 60A 220W TO-263AA

  • Series:

    GenX3™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    60 A

  • Current - Collector Pulsed (Icm):

    150 A

  • Vce(on) (Max) @ Vge, Ic:

    3V @ 15V, 20A

  • Power - Max:

    220 W

  • Switching Energy:

    270µJ (on), 90µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    38 nC

  • Td (on/off) @ 25°C:

    16ns/42ns

  • Test Condition:

    300V, 20A, 5Ohm, 15V

  • Reverse Recovery Time (trr):

    26 ns

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

  • Supplier Device Package:

    TO-263 (D2PAK)

Stock:

0

1

Part Number:

IXYH30N65B3D1

Manufacturer:

IXYS

Description:

IGBT PT 650V 70A TO247

  • Series:

    XPT™, GenX3™

  • IGBT Type:

    PT

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    70 A

  • Current - Collector Pulsed (Icm):

    160 A

  • Vce(on) (Max) @ Vge, Ic:

    2.1V @ 15V, 30A

  • Power - Max:

    270 W

  • Switching Energy:

    830µJ (on), 640µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    45 nC

  • Td (on/off) @ 25°C:

    17ns/87ns

  • Test Condition:

    400V, 30A, 10Ohm, 15V

  • Reverse Recovery Time (trr):

    38 ns

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247 (IXYH)

Stock:

0

1

Part Number:

AOK60B65H2AL

Manufacturer:

Alpha & Omega Semiconductor Inc.

Description:

IGBT 60A

  • Series:

    AlphaIGBT™

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    650 V

  • Current - Collector (Ic) (Max):

    120 A

  • Current - Collector Pulsed (Icm):

    180 A

  • Vce(on) (Max) @ Vge, Ic:

    2.5V @ 15V, 60A

  • Power - Max:

    416 W

  • Switching Energy:

    2.36mJ (on), 1.17mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    84 nC

  • Td (on/off) @ 25°C:

    35ns/168ns

  • Test Condition:

    400V, 60A, 5Ohm, 15V

  • Reverse Recovery Time (trr):

    318 ns

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    TO-247

Stock:

0

1

Part Number:

GT40QR21-STA1-E-D

Manufacturer:

Toshiba Semiconductor and Storage

Description:

IGBT 1200V 40A TO3P

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    1200 V

  • Current - Collector (Ic) (Max):

    40 A

  • Current - Collector Pulsed (Icm):

    80 A

  • Vce(on) (Max) @ Vge, Ic:

    2.7V @ 15V, 40A

  • Power - Max:

    230 W

  • Switching Energy:

    -, 290µJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    -

  • Td (on/off) @ 25°C:

    -

  • Test Condition:

    280V, 40A, 10Ohm, 20V

  • Reverse Recovery Time (trr):

    600 ns

  • Operating Temperature:

    175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-3P-3, SC-65-3

  • Supplier Device Package:

    TO-3P(N)

Stock:

228

1

Part Number:

SGB15N60

Manufacturer:

Infineon Technologies

Description:

IGBT NPT 600V 31A TO263-3

  • Series:

    -

  • IGBT Type:

    NPT

  • Voltage - Collector Emitter Breakdown (Max):

    600 V

  • Current - Collector (Ic) (Max):

    31 A

  • Current - Collector Pulsed (Icm):

    62 A

  • Vce(on) (Max) @ Vge, Ic:

    2.4V @ 15V, 15A

  • Power - Max:

    139 W

  • Switching Energy:

    570µJ

  • Input Type:

    Standard

  • Gate Charge:

    76 nC

  • Td (on/off) @ 25°C:

    32ns/234ns

  • Test Condition:

    400V, 15A, 21Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Package / Case:

    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

  • Supplier Device Package:

    PG-TO263-3-2

Stock:

0

1

Part Number:

IKQB160N75CP2AKSA1

Manufacturer:

Infineon Technologies

Description:

IGBT 750V 200A TO247-3

  • Series:

    -

  • IGBT Type:

    -

  • Voltage - Collector Emitter Breakdown (Max):

    750 V

  • Current - Collector (Ic) (Max):

    200 A

  • Current - Collector Pulsed (Icm):

    480 A

  • Vce(on) (Max) @ Vge, Ic:

    1.65V @ 15V, 160A

  • Power - Max:

    750 W

  • Switching Energy:

    9.7mJ (on), 5.2mJ (off)

  • Input Type:

    Standard

  • Gate Charge:

    610 nC

  • Td (on/off) @ 25°C:

    72ns/324ns

  • Test Condition:

    450V, 160A, 4.8Ohm, 15V

  • Reverse Recovery Time (trr):

    -

  • Operating Temperature:

    -40°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Package / Case:

    TO-247-3

  • Supplier Device Package:

    PG-TO247-3-51

Stock:

648

1

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