Part Number:
BUK9M6R7-40HX
Manufacturer:
Nexperia
Description:
MOSFET N-CH 40V 50A LFPAK33
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
31 nC @ 10 V
Vgs (Max):
+16V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
2054 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
65W (Ta)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK33
Package / Case:
SOT-1210, 8-LFPAK33 (5-Lead)
Stock:
13482
Part Number:
SI3493BDV-T1-BE3
Manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 20-V (D-S) MOSFET
Series:
-
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
27.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
43.5 nC @ 5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
1805 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2.08W (Ta), 2.97W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Stock:
23400
Part Number:
R6009KNXC7G
Manufacturer:
Rohm Semiconductor
Description:
600V 9A TO-220FM, HIGH-SPEED SWI
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
48W (Tc)
Operating Temperature:
150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FM
Package / Case:
TO-220-3 Full Pack
Stock:
1653
Part Number:
IGO60R042D1AUMA2
Manufacturer:
Infineon Technologies
Description:
GAN HV
Series:
CoolGaN™
FET Type:
-
Technology:
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-20-85
Package / Case:
20-PowerSOIC (0.433", 11.00mm Width)
Stock:
0
Part Number:
MSJU05N90A-TP
Manufacturer:
Micro Commercial Co
Description:
Interface
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
900 V
Current - Continuous Drain (Id) @ 25°C:
5A
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.49Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13.6 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
474 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252 (DPAK)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
0
Part Number:
PMPB12R5EPX
Manufacturer:
Nexperia
Description:
PMPB12R5EP - 30 V, P-CHANNEL TRE
Series:
TrenchMOS™
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
44 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1392 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
1.9W (Ta), 12.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DFN2020M-6
Package / Case:
6-UDFN Exposed Pad
Stock:
0
Part Number:
IMW120R020M1HXKSA1
Manufacturer:
Infineon Technologies
Description:
SIC DISCRETE
Series:
CoolSiC™
FET Type:
N-Channel
Technology:
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Rds On (Max) @ Id, Vgs:
26.9mOhm @ 41A, 18V
Vgs(th) (Max) @ Id:
5.2V @ 17.6mA
Gate Charge (Qg) (Max) @ Vgs:
83 nC @ 18 V
Vgs (Max):
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:
3460 nF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3
Package / Case:
TO-247-3
Stock:
777
Part Number:
DMN4060SVTQ-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET BVDSS: 31V~40V TSOT26 T&R
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
45 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
46mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1159 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TSOT-26
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Stock:
0
Part Number:
SQD40061EL-T4_GE3
Manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 40-V (D-S) 175C MOSFET
Series:
TrenchFET®
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
5.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
280 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
14500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
107W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Stock:
7500
Part Number:
SI3420A-13P
Manufacturer:
Micro Commercial Co
Description:
MOSFET
Series:
-
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
28mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
888 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.25W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23
Package / Case:
TO-236-3, SC-59, SOT-23-3
Stock:
0
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