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FETs, MOSFETs - Single (41758)

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Part Number:

BUK9M6R7-40HX

Manufacturer:

Nexperia

Description:

MOSFET N-CH 40V 50A LFPAK33

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    50A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    6.7mOhm @ 20A, 10V

  • Vgs(th) (Max) @ Id:

    2.15V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    31 nC @ 10 V

  • Vgs (Max):

    +16V, -10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    2054 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    65W (Ta)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    LFPAK33

  • Package / Case:

    SOT-1210, 8-LFPAK33 (5-Lead)

Stock:

13482

1

Part Number:

SI3493BDV-T1-BE3

Manufacturer:

Vishay Siliconix

Description:

P-CHANNEL 20-V (D-S) MOSFET

  • Series:

    -

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    7A (Ta), 8A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.8V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    27.5mOhm @ 7A, 4.5V

  • Vgs(th) (Max) @ Id:

    900mV @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    43.5 nC @ 5 V

  • Vgs (Max):

    ±8V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1805 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    2.08W (Ta), 2.97W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    6-TSOP

  • Package / Case:

    SOT-23-6 Thin, TSOT-23-6

Stock:

23400

1

Part Number:

R6009KNXC7G

Manufacturer:

Rohm Semiconductor

Description:

600V 9A TO-220FM, HIGH-SPEED SWI

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    9A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    535mOhm @ 2.8A, 10V

  • Vgs(th) (Max) @ Id:

    5V @ 1mA

  • Gate Charge (Qg) (Max) @ Vgs:

    16.5 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    540 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    48W (Tc)

  • Operating Temperature:

    150°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    TO-220FM

  • Package / Case:

    TO-220-3 Full Pack

Stock:

1653

1

Part Number:

IGO60R042D1AUMA2

Manufacturer:

Infineon Technologies

Description:

GAN HV

  • Series:

    CoolGaN™

  • FET Type:

    -

  • Technology:

    GaNFET (Gallium Nitride)

  • Drain to Source Voltage (Vdss):

    600 V

  • Current - Continuous Drain (Id) @ 25°C:

    -

  • Drive Voltage (Max Rds On, Min Rds On):

    -

  • Rds On (Max) @ Id, Vgs:

    -

  • Vgs(th) (Max) @ Id:

    -

  • Gate Charge (Qg) (Max) @ Vgs:

    -

  • Vgs (Max):

    -

  • Input Capacitance (Ciss) (Max) @ Vds:

    -

  • FET Feature:

    -

  • Power Dissipation (Max):

    -

  • Operating Temperature:

    -

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    PG-DSO-20-85

  • Package / Case:

    20-PowerSOIC (0.433", 11.00mm Width)

Stock:

0

1

Part Number:

MSJU05N90A-TP

Manufacturer:

Micro Commercial Co

Description:

Interface

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    900 V

  • Current - Continuous Drain (Id) @ 25°C:

    5A

  • Drive Voltage (Max Rds On, Min Rds On):

    10V

  • Rds On (Max) @ Id, Vgs:

    1.49Ohm @ 2.5A, 10V

  • Vgs(th) (Max) @ Id:

    3.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    13.6 nC @ 10 V

  • Vgs (Max):

    ±30V

  • Input Capacitance (Ciss) (Max) @ Vds:

    474 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    83W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-252 (DPAK)

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

0

1

Part Number:

PMPB12R5EPX

Manufacturer:

Nexperia

Description:

PMPB12R5EP - 30 V, P-CHANNEL TRE

  • Series:

    TrenchMOS™

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    30 V

  • Current - Continuous Drain (Id) @ 25°C:

    8.8A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    15mOhm @ 8.8A, 10V

  • Vgs(th) (Max) @ Id:

    2V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    44 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1392 pF @ 15 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.9W (Ta), 12.5W (Tc)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    DFN2020M-6

  • Package / Case:

    6-UDFN Exposed Pad

Stock:

0

1

Part Number:

IMW120R020M1HXKSA1

Manufacturer:

Infineon Technologies

Description:

SIC DISCRETE

  • Series:

    CoolSiC™

  • FET Type:

    N-Channel

  • Technology:

    SiCFET (Silicon Carbide)

  • Drain to Source Voltage (Vdss):

    1200 V

  • Current - Continuous Drain (Id) @ 25°C:

    98A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    15V, 18V

  • Rds On (Max) @ Id, Vgs:

    26.9mOhm @ 41A, 18V

  • Vgs(th) (Max) @ Id:

    5.2V @ 17.6mA

  • Gate Charge (Qg) (Max) @ Vgs:

    83 nC @ 18 V

  • Vgs (Max):

    +20V, -5V

  • Input Capacitance (Ciss) (Max) @ Vds:

    3460 nF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    375W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Through Hole

  • Supplier Device Package:

    PG-TO247-3

  • Package / Case:

    TO-247-3

Stock:

777

1

Part Number:

DMN4060SVTQ-13

Manufacturer:

Diodes Incorporated

Description:

MOSFET BVDSS: 31V~40V TSOT26 T&R

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    45 V

  • Current - Continuous Drain (Id) @ 25°C:

    4.3A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    46mOhm @ 4.3A, 10V

  • Vgs(th) (Max) @ Id:

    3V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    20 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    1159 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.2W (Ta)

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TSOT-26

  • Package / Case:

    SOT-23-6 Thin, TSOT-23-6

Stock:

0

1

Part Number:

SQD40061EL-T4_GE3

Manufacturer:

Vishay Siliconix

Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

  • Series:

    TrenchFET®

  • FET Type:

    P-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    40 V

  • Current - Continuous Drain (Id) @ 25°C:

    100A (Tc)

  • Drive Voltage (Max Rds On, Min Rds On):

    4.5V, 10V

  • Rds On (Max) @ Id, Vgs:

    5.1mOhm @ 30A, 10V

  • Vgs(th) (Max) @ Id:

    2.5V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    280 nC @ 10 V

  • Vgs (Max):

    ±20V

  • Input Capacitance (Ciss) (Max) @ Vds:

    14500 pF @ 25 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    107W (Tc)

  • Operating Temperature:

    -55°C ~ 175°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    TO-252AA

  • Package / Case:

    TO-252-3, DPAK (2 Leads + Tab), SC-63

Stock:

7500

1

Part Number:

SI3420A-13P

Manufacturer:

Micro Commercial Co

Description:

MOSFET

  • Series:

    -

  • FET Type:

    N-Channel

  • Technology:

    MOSFET (Metal Oxide)

  • Drain to Source Voltage (Vdss):

    20 V

  • Current - Continuous Drain (Id) @ 25°C:

    6A (Ta)

  • Drive Voltage (Max Rds On, Min Rds On):

    1.8V, 4.5V

  • Rds On (Max) @ Id, Vgs:

    28mOhm @ 5A, 4.5V

  • Vgs(th) (Max) @ Id:

    1V @ 250µA

  • Gate Charge (Qg) (Max) @ Vgs:

    12 nC @ 10 V

  • Vgs (Max):

    ±10V

  • Input Capacitance (Ciss) (Max) @ Vds:

    888 pF @ 10 V

  • FET Feature:

    -

  • Power Dissipation (Max):

    1.25W

  • Operating Temperature:

    -55°C ~ 150°C (TJ)

  • Mounting Type:

    Surface Mount

  • Supplier Device Package:

    SOT-23

  • Package / Case:

    TO-236-3, SC-59, SOT-23-3

Stock:

0

1

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