FETs, MOSFETs - Single (41758)

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60V

Current - Continuous Drain (Id) @ 25°C:

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

100mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

5nC @ 4.5V

Vgs (Max):

±12V

Input Capacitance (Ciss) (Max) @ Vds:

470pF @ 10V

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UPAK

Package / Case:

TO-243AA

Series:

-

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30V

Current - Continuous Drain (Id) @ 25°C:

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

140mOhm @ 1.7A, 4.5V

Vgs(th) (Max) @ Id:

1.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

3nC @ 4.5V

Vgs (Max):

+8V, -12V

Input Capacitance (Ciss) (Max) @ Vds:

330pF @ 10V

FET Feature:

-

Power Dissipation (Max):

1.5W (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UPAK

Package / Case:

TO-243AA

Series:

-

FET Type:

-

Technology:

-

Drain to Source Voltage (Vdss):

-

Current - Continuous Drain (Id) @ 25°C:

-

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

-

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

-

Mounting Type:

-

Supplier Device Package:

-

Package / Case:

-

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16V

Current - Continuous Drain (Id) @ 25°C:

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

750mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

15W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

2-HWSON (5x4)

Package / Case:

3-DFN Exposed Pad

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16V

Current - Continuous Drain (Id) @ 25°C:

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

800mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

15W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UPAK

Package / Case:

TO-243AA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16V

Current - Continuous Drain (Id) @ 25°C:

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

800mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

15W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UPAK

Package / Case:

TO-243AA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16V

Current - Continuous Drain (Id) @ 25°C:

800mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

750mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

9W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UPAK

Package / Case:

TO-243AA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16V

Current - Continuous Drain (Id) @ 25°C:

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

900mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

3W (Ta)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

UPAK

Package / Case:

TO-243AA

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

16V

Current - Continuous Drain (Id) @ 25°C:

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

-

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

750mV @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±5V

Input Capacitance (Ciss) (Max) @ Vds:

-

FET Feature:

-

Power Dissipation (Max):

15W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

2-HWSON (5x4)

Package / Case:

3-DFN Exposed Pad

Series:

-

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600V

Current - Continuous Drain (Id) @ 25°C:

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

810mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

38nC @ 10V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

1400pF @ 25V

FET Feature:

-

Power Dissipation (Max):

100W (Tc)

Operating Temperature:

150°C

Mounting Type:

Surface Mount

Supplier Device Package:

4-LDPAK

Package / Case:

SC-83