Part Number:
DMN3012LFG-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 2 N-CH 30V POWERDI3333
Series:
-
FET Type:
2 N-Channel (Dual)
FET Feature:
Standard
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 15V, 1480pF @ 15V
Power - Max:
2.2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
8-PowerLDFN
Supplier Device Package:
PowerDI3333-8
Stock:
303
Part Number:
FDS8984_F123
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 30V 8-SOIC
Series:
*
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
240
Part Number:
FDPC1002S
Manufacturer:
ON Semiconductor
Description:
INTEGRATED CIRCUIT
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
499
Part Number:
FDMB3900N
Manufacturer:
ON Semiconductor
Description:
INTEGRATED CIRCUIT
Series:
-
FET Type:
-
FET Feature:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
-
Power - Max:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
411
Part Number:
FDMA2002NZ_F130
Manufacturer:
ON Semiconductor
Description:
INTEGRATED CIRCUIT
Series:
PowerTrench®
FET Type:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
2.9A
Rds On (Max) @ Id, Vgs:
123mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
220pF @ 15V
Power - Max:
650mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-VDFN Exposed Pad
Supplier Device Package:
6-MicroFET (2x2)
Stock:
217
Part Number:
FDG6303N_G
Manufacturer:
ON Semiconductor
Description:
INTEGRATED CIRCUIT
Series:
-
FET Type:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
500mA
Rds On (Max) @ Id, Vgs:
450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 10V
Power - Max:
300mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SC-88 (SC-70-6)
Stock:
135
Part Number:
APTMC120HRM40CT3AG
Manufacturer:
Microsemi
Description:
POWER MODULE - SIC MOSFET
Series:
-
FET Type:
2 N-Channel (Dual)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
73A (Tc)
Rds On (Max) @ Id, Vgs:
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id:
3V @ 12.5mA
Gate Charge (Qg) (Max) @ Vgs:
161nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:
2788pF @ 1000V
Power - Max:
375W
Operating Temperature:
-40°C ~ 150°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
SP3
Stock:
262
Part Number:
APTMC120HR11CT3AG
Manufacturer:
Microsemi
Description:
POWER MODULE - SIC MOSFET
Series:
-
FET Type:
2 N-Channel (Dual)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
26A (Tc)
Rds On (Max) @ Id, Vgs:
98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:
3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:
62nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 1000V
Power - Max:
125W
Operating Temperature:
-40°C ~ 150°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
SP3
Stock:
342
Part Number:
DF23MR12W1M1B11BOMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MODULE 1200V 25A
Series:
CoolSiC™+
FET Type:
2 N-Channel (Dual)
FET Feature:
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:
25A
Rds On (Max) @ Id, Vgs:
45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id:
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:
620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:
2000pF @ 800V
Power - Max:
20mW
Operating Temperature:
-40°C ~ 150°C (TJ)
Mounting Type:
Chassis Mount
Package / Case:
Module
Supplier Device Package:
Module
Stock:
145
Part Number:
SI1539DDL-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N/P-CH 30V SC70-6
Series:
TrenchFET®
FET Type:
N and P-Channel
FET Feature:
Standard
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs:
388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
28pF @ 15V, 21pF @ 15V
Power - Max:
340mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Package / Case:
6-TSSOP, SC-88, SOT-363
Supplier Device Package:
SC-70-6
Stock:
297
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