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30V|2.9A|650mW
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INTEGRATED CIRCUIT
Specifications
- Brand
- ON Semiconductor
- Package
- 6-VDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
217pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how FDMA2002NZ_F130 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | PowerTrench® | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.9A | |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 2.9A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V | |
| Power - Max | 650mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VDFN Exposed Pad | |
| Supplier Device Package | 6-MicroFET (2x2) |
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