Part Number:
2N2219A
Manufacturer:
Central Semiconductor Corp
Description:
TRANS NPN 40V 0.8A TO-39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800mA
Voltage - Collector Emitter Breakdown (Max):
40V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800mW
Frequency - Transition:
300MHz
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Stock:
1065
Part Number:
2N2219A
Manufacturer:
Microsemi
Description:
TRANS NPN 50V 0.8A TO-39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800mA
Voltage - Collector Emitter Breakdown (Max):
50V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
415
Part Number:
2N2219AE3
Manufacturer:
Microchip Technology
Description:
TRANS NPN 50V 0.8A TO39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Stock:
0
Part Number:
2N2219AE4
Manufacturer:
Microsemi
Description:
TRANS NPN 40V 0.8A TO-39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800mA
Voltage - Collector Emitter Breakdown (Max):
50V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
294
Part Number:
2N2219AE4
Manufacturer:
Microchip Technology
Description:
TRANS NPN 50V 0.8A TO39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
0
Part Number:
2N2219AL
Manufacturer:
Microsemi
Description:
TRANS NPN 50V 0.8A TO-39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800mA
Voltage - Collector Emitter Breakdown (Max):
50V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
270
Part Number:
2N2219AP
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
0
Part Number:
2N2219A-PBFREE
Manufacturer:
Central Semiconductor Corp
Description:
TRANS NPN 40V 0.8A TO39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800 mW
Frequency - Transition:
300MHz
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Stock:
3093
Part Number:
2N2219E3
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
0
Part Number:
2N2219-PBFREE
Manufacturer:
Central Semiconductor Corp
Description:
TRANS NPN 30V 0.8A TO39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800 mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Power - Max:
800 mW
Frequency - Transition:
250MHz
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Stock:
5058
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