Part Number:
2N2102
Manufacturer:
Central Semiconductor Corp
Description:
TRANS NPN 65V 1A TO-39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1A
Voltage - Collector Emitter Breakdown (Max):
65V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Power - Max:
1W
Frequency - Transition:
60MHz
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Stock:
1505
Part Number:
2N2102A
Manufacturer:
Microchip Technology
Description:
TRANS PNP 65V 1A TO5
Series:
-
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
65 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
5 W
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
Through Hole
Package / Case:
TO-205AA, TO-5-3 Metal Can
Supplier Device Package:
TO-5AA
Stock:
0
Part Number:
2N2102-PBFREE
Manufacturer:
Central Semiconductor Corp
Description:
TRANS NPN 65V 1A TO39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
65 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Power - Max:
1 W
Frequency - Transition:
60MHz
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Stock:
795
Part Number:
2N2102S
Manufacturer:
Microsemi
Description:
NPN TRANSISTOR
Series:
*
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
364
Part Number:
2N2102S
Manufacturer:
Microchip Technology
Description:
NPN TRANSISTOR
Series:
-
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
2N2106
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
1 W
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
Through Hole
Package / Case:
TO-205AA, TO-5-3 Metal Can
Supplier Device Package:
TO-5AA
Stock:
0
Part Number:
2N2107
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Series:
-
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
1 W
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
Through Hole
Package / Case:
TO-205AA, TO-5-3 Metal Can
Supplier Device Package:
TO-5AA
Stock:
0
Part Number:
2N2108
Manufacturer:
Microchip Technology
Description:
SMALL-SIGNAL BJT
Series:
-
Transistor Type:
PNP
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
2V @ 10µA, 200µA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
1 W
Frequency - Transition:
-
Operating Temperature:
-65°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AA, TO-5-3 Metal Can
Supplier Device Package:
TO-5AA
Stock:
0
Part Number:
2N2201
Manufacturer:
Microchip Technology
Description:
POWER BJT
Series:
-
Transistor Type:
-
Current - Collector (Ic) (Max):
-
Voltage - Collector Emitter Breakdown (Max):
-
Vce Saturation (Max) @ Ib, Ic:
-
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
-
Power - Max:
-
Frequency - Transition:
-
Operating Temperature:
-
Mounting Type:
-
Package / Case:
-
Supplier Device Package:
-
Stock:
0
Part Number:
2N2218
Manufacturer:
Microsemi
Description:
TRANS NPN 30V 0.8A TO39
Series:
-
Transistor Type:
NPN
Current - Collector (Ic) (Max):
800mA
Voltage - Collector Emitter Breakdown (Max):
30V
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 10V
Power - Max:
800mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 200°C (TJ)
Mounting Type:
Through Hole
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39 (TO-205AD)
Stock:
125
每日获取来自全球众多供应商的最新优惠资讯