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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Part Number:

RN4981,LF(CT

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS NPN/PNP PREBIAS 0.2W US6

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100µA (ICBO)

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

297

1

Part Number:

RN1961FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

472

1

Part Number:

RN1906(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.2W US6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

191

1

Part Number:

RN2702TE85LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP PREBIAS 0.2W USV

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual) (Emitter Coupled)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    5-TSSOP, SC-70-5, SOT-353

  • Supplier Device Package:

    USV

Stock:

287

1

Part Number:

FMG9AT248

Manufacturer:

Rohm Semiconductor

Description:

TRANS 2NPN PREBIAS 0.3W SMT5

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 5mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 500µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    250MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74A, SOT-753

  • Supplier Device Package:

    SMT5

Stock:

182

1

Part Number:

NSVB143TPDXV6T1G

Manufacturer:

ON Semiconductor

Description:

TRANS NPN/PNP PREBIAS SOT563

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    160 @ 5mA, 10V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 300µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    357mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

279

1

Part Number:

NSVB123JPDXV6T1G

Manufacturer:

ON Semiconductor

Description:

TRANS PREBIAS NPN/PNP SOT563

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    2.2kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 5mA, 10V

  • Vce Saturation (Max) @ Ib, Ic:

    250mV @ 300µA, 10mA

  • Current - Collector Cutoff (Max):

    500nA

  • Frequency - Transition:

    -

  • Power - Max:

    500mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-563

Stock:

120

1

Part Number:

PBLS4004V,115

Manufacturer:

NXP

Description:

TRANS NPN PREBIAS/PNP SOT666

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 40V

  • Resistor - Base (R1):

    22kOhms

  • Resistor - Emitter Base (R2):

    22kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    60 @ 5mA, 5V / 150 @ 100mA, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    300MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-666

Stock:

192

1

Part Number:

PBLS4002V,115

Manufacturer:

NXP

Description:

TRANS NPN PREBIAS/PNP SOT666

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 500mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 40V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V / 150 @ 100mA, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA

  • Current - Collector Cutoff (Max):

    1µA

  • Frequency - Transition:

    300MHz

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    SOT-666

Stock:

223

1

Part Number:

PBLS2002S,115

Manufacturer:

NXP

Description:

TRANS NPN PREBIAS/PNP 1.5W 8SO

  • Series:

    -

  • Transistor Type:

    1 NPN Pre-Biased, 1 PNP

  • Current - Collector (Ic) (Max):

    100mA, 3A

  • Voltage - Collector Emitter Breakdown (Max):

    50V, 20V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    4.7kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    30 @ 10mA, 5V / 150 @ 2A, 2V

  • Vce Saturation (Max) @ Ib, Ic:

    150mV @ 500µA, 10mA / 355mV @ 300mA, 3A

  • Current - Collector Cutoff (Max):

    1µA, 100nA

  • Frequency - Transition:

    100MHz

  • Power - Max:

    1.5W

  • Mounting Type:

    Surface Mount

  • Package / Case:

    8-SOIC (0.154", 3.90mm Width)

  • Supplier Device Package:

    8-SO

Stock:

464

1

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