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Bipolar (BJT) - Arrays, Pre-Biased (2065)

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Records 2065
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Part Number:

RN2902FE(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    10kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    50 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    200MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

217

1

Part Number:

RN1911(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W US6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

135

1

Part Number:

RN1673(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.3W SM6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    -

  • Power - Max:

    300mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SC-74, SOT-457

  • Supplier Device Package:

    SM6

Stock:

439

1

Part Number:

RN1971FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

124

1

Part Number:

RN1970FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    -

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    120 @ 1mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

217

1

Part Number:

RN1969FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    47kOhms

  • Resistor - Emitter Base (R2):

    22kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    70 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

119

1

Part Number:

RN1968FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

297

1

Part Number:

RN1967FE(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    10kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

334

1

Part Number:

RN1906FE(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2NPN PREBIAS 0.1W ES6

  • Series:

    -

  • Transistor Type:

    2 NPN - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    4.7kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100nA (ICBO)

  • Frequency - Transition:

    250MHz

  • Power - Max:

    100mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    SOT-563, SOT-666

  • Supplier Device Package:

    ES6

Stock:

395

1

Part Number:

RN4988(T5L,F,T)

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS NPN/PNP PREBIAS 0.2W US6

  • Series:

    -

  • Transistor Type:

    1 NPN, 1 PNP - Pre-Biased (Dual)

  • Current - Collector (Ic) (Max):

    100mA

  • Voltage - Collector Emitter Breakdown (Max):

    50V

  • Resistor - Base (R1):

    22kOhms

  • Resistor - Emitter Base (R2):

    47kOhms

  • DC Current Gain (hFE) (Min) @ Ic, Vce:

    80 @ 10mA, 5V

  • Vce Saturation (Max) @ Ib, Ic:

    300mV @ 250µA, 5mA

  • Current - Collector Cutoff (Max):

    100µA (ICBO)

  • Frequency - Transition:

    250MHz, 200MHz

  • Power - Max:

    200mW

  • Mounting Type:

    Surface Mount

  • Package / Case:

    6-TSSOP, SC-88, SOT-363

  • Supplier Device Package:

    US6

Stock:

203

1

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